APPLICATIONS
Digital and Spread Spectrum Communication Systems
Cellular/PCS/ISM Transceivers
Wireless LAN/Wireless Local Loop
QPSK/GMSK/QAM Modulators
Single-Sideband (SSB) Modulators
Frequency Synthesizers
Image Reject Mixer
Quadrature Modulator
AD8346
FUNCTIONAL BLOCK DIAGRAM
IBBP
1
IBBN
2
COM1
3
COM1
4
LOIN
5
LOIP
VPS1
ENBL
6
7
8
PHASE
SPLITTER
BIAS
AD8346
QBBP
16
QBBN
15
COM4
14
COM4
13
VPS2
12
VOUT
11
COM3
10
COM2
9
PRODUCT DESCRIPTION
The AD8346 is a silicon RFIC I/Q modulator for use from
0.8 GHz to 2.5 GHz. Its excellent phase accuracy and amplitude balance allow high performance direct modulation to RF.
The differential LO input is applied to a polyphase network
phase splitter that provides accurate phase quadrature from
0.8 GHz to 2.5 GHz. Buffer amplifiers are inserted between
two sections of the phase splitter to improve the signal-to-noise
ratio. The I and Q outputs of the phase splitter drive the LO
inputs of two Gilbert-cell mixers. Two differential V-to-I converters connected to the baseband inputs provide the baseband
modulation signals for the mixers. The outputs of the two mixers
are summed together at an amplifier which is designed to drive a
50 Ω load.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
This quadrature modulator can be used as the transmit modulator in digital systems such as PCS, DCS, GSM, CDMA, and
ISM transceivers. The baseband quadrature inputs are directly
modulated by the LO signal to produce various QPSK and
QAM formats at the RF output.
Additionally, this quadrature modulator can be used with direct
digital synthesizers in hybrid phase-locked loops to generate
signals over a wide frequency range with millihertz resolution.
The AD8346 is supplied in a 16-lead TSSOP package, measur-
ing 6.5 × 5.1 × 1.1 mm. It is specified to operate over a
–40°C to +85°C temperature range and 2.7 V to 5.5 V supply
voltage range. The device is fabricated on Analog Devices’ high
performance 25 GHz bipolar silicon process.
(VS = 5 V; TA = +25ⴗC, LO frequency = 1900 MHz; LO level = –10 dBm; BB frequency
= 100 kHz; BB inputs are dc biased to 1.2 V; BB input level = 1.0 V p-p each pin for 2.0 V p-p differential drive; LO source and RF output load
impedances are 50 ⍀, dBm units are referenced to 50 ⍀ unless otherwise noted.)
ParametersConditionsMinTypMaxUnits
RF OUTPUT
Operating Frequency0.82.5GHz
Quadrature Phase Error(See Figure 29 for Setup)1Degree rms
I/Q Amplitude Balance(See Figure 29 for Setup)0.2dB
Output PowerI and Q Channels in Quadrature–13–10–6dBm
Output VSWR1.25:1
Output P1 dB–3dBm
Carrier Feedthrough–42–35dBm
Sideband Suppression–36–25dBc
IM3 Suppression–60dBc
Equivalent Output IP3+20dBm
Output Noise Floor20 MHz Offset from LO–147dBm/Hz
RESPONSE TO CDMA IS95
BASEBAND SIGNALS
ACPR (Adjacent Channel Power Ratio)(See Figure 29 for Setup)–72dBc
EVM (Error Vector Magnitude)(See Figure 29 for Setup)2.5%
Rho (Waveform Quality Factor)(See Figure 29 for Setup)0.9974
MODULATION INPUT
Input Resistance12kΩ
Modulation Bandwidth–3 dB70MHz
LO INPUT
LO Drive Level–12–6dBm
Input VSWR1.9:1
ENABLE
ENBL HI Threshold2.0V
ENBL LO Threshold0.5V
ENBL Turn-On TimeSettle to Within 0.5 dB of Final
Min Input Voltage IBBP, IBBN, QBBP, QBBN . . . . . . . . 0 V
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may effect device reliability.
Max Input Voltage IBBP, IBBN, QBBP, QBBN . . . . . . . 2.5 V
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . .+300°C
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8346 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Package
ModelTemperature RangePackage DescriptionOption
AD8346ARU–40°C to +85°CTube (16-Lead TSSOP) Thin Shrink Small Outline PackageRU-16
AD8346ARU-REEL13" Tape and Reel
AD8346ARU-REEL77" Tape and Reel
AD8346-EVALEvaluation Board
PIN CONFIGURATION
1
IBBPQBBP
IBBNQBBN
2
3
COM1COM4
4
COM1COM4
LOINVPS2
LOIPVOUT
VPS1COM3
ENBLCOM2
AD8346
TOP VIEW
5
(Not to Scale)
6
7
8
16
15
14
13
12
11
10
9
REV. 0
–3–
AD8346
43V
43V
VPS2
V
OUT
PIN FUNCTION DESCRIPTIONS
Equivalent
PinNameDescriptionCircuit
1IBBPI Channel Baseband Positive Input Pin. Input should be dc biased to approximately 1.2 V.Circuit A
Nominal characterized ac swing is 1 V p-p (0.7 V to 1.7 V). This makes the differential
input 2 V p-p when IBBN is 180 degrees out of phase from IBBP.
2IBBNI Channel Baseband Negative Input Pin. Input should be dc biased to approximately 1.2 V.Circuit A
Nominal characterized ac swing is 1 V p-p (0.7 V to 1.7 V). This makes the differential
input 2 V p-p when IBBN is 180 degrees out of phase from IBBP.
3COM1Ground pin for the LO phase splitter and LO buffers.
4COM1Ground pin for the LO phase splitter and LO buffers.
5LOINLO Negative Input Pin. Internal dc bias (approximately VPS1–800 mV) is supplied. ThisCircuit B
pin must be ac coupled.
6LOIPLO Positive Input Pin. Internal dc bias (approximately VPS1–800 mV) is supplied. ThisCircuit B
pin must be ac coupled.
7VPS1Power supply pin for the bias cell and LO buffers. This pin should be decoupled using
local 100 pF and 0.01 µF capacitors.
8ENBLEnable Pin. A high level enables the device; a low level puts the device in sleep mode.Circuit C
9COM2Ground pin for the input stage of output amplifier.
10COM3Ground pin for the output stage of output amplifier.
11VOUT50 Ω DC Coupled RF Output. User must provide ac coupling on this pin.Circuit D
12VPS2Power supply pin for Baseband input voltage to current converters and mixer core. This pin
should be decoupled using local 100 pF and 0.01 µF capacitors.
13COM4Ground pin for Baseband input voltage to current converters and mixer core.
14COM4Ground pin for Baseband input voltage to current converters and mixer core.
15QBBNQ Channel Baseband Negative Input. Input should be dc biased to approximately 1.2 V.Circuit A
Nominal characterized ac swing is 1 V p-p. This makes the differential input 2 V p-p when
QBBN is 180 degrees out of phase from QBBP.
16QBBPQ Channel Baseband Positive Input. Input should be dc biased to approximately 1.2 V.Circuit A
Nominal characterized ac swing is 1 V p-p. This makes the differential input 2 V p-p when
QBBN is 180 degrees out of phase from QBBP.
INPUT
VPS2
LOIN
LOIP
9kV
3kV
VPS1
ACTIVE LOADS
Circuit A
Circuit B
BUFFER
CONTINUES
PHASE
SPLITTER
TO MIXER
CORE
ENBL
Figure 1. Equivalent Circuits
–4–
VPS1
30kV
40kV
Circuit C
Circuit D
75kV
75kV
TO BIAS FOR
STARTUP/
SHUTDOWN
780V
REV. 0
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