FEATURES
High-Performance Active Mixer
Broadband Operation to 2.5 GHz
Conversion Gain: 7.1 dB
Input IP3: 16.5 dBm
LO Drive: –10 dBm
Noise Figure: 14.1 dB
Input P1 dB: 2.8 dBm
Differential LO, IF and RF Ports
50 LO Input Impedance
Single-Supply Operation: 5 V @ 50 mA Typical
Power-Down Mode @ 20 A Typical
APPLICATIONS
Cellular Base Stations
Wireless LAN
Satellite Converters
SONET/SDH Radio
Radio Links
RF Instrumentation
High IP3 Active Mixer
AD8343
FUNCTIONAL BLOCK DIAGRAM
COMM
INPP
INPM
DCPL
VPOS
PWDN
COMM
AD8343
1
2
3
4
5
BIAS
6
7
14
13
12
11
10
9
8
COMM
OUTP
OUTM
COMM
LOIP
LOIM
COMM
PRODUCT DESCRIPTION
The AD8343 is a high-performance broadband active mixer.
Having wide bandwidth on all ports and very low intermodulation
distortion, the AD8343 is well suited for demanding transmit or
receive channel applications.
The AD8343 provides a typical conversion gain of 7.1 dB. The
integrated LO driver supports a 50 Ω differential input impedance with low LO drive level, helping to minimize external
component count.
The open-emitter differential inputs may be interfaced directly
to a differential filter or driven through a balun (transformer) to
provide a balanced drive from a single-ended source.
The open-collector differential outputs may be used to drive a
differential IF signal interface or converted to a single-ended
signal through the use of a matching network or transformer.
When centered on the VPOS supply voltage, the outputs may
swing ±1 V.
The LO driver circuitry typically consumes 15 mA of current.
Two external resistors are used to set the mixer core current for
required performance resulting in a total current of 20 mA to
60 mA. This corresponds to power consumption of 100 mW to
300 mW with a single 5 V supply.
The AD8343 is fabricated on Analog Devices’ proprietary, highperformance 25 GHz silicon bipolar IC process. The AD8343 is
available in a 14-lead TSSOP package. It operates over a –40°C
to +85°C temperature range. A device-populated evaluation
board is available to facilitate device matching.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
= 5.0 V, TA = 25C; See Figure 24 and Tables III Through V.)
(V
S
Input FrequencyOutput Frequency LO to Output2 LO to Output3 LO to OutputInput to Output
(MHz)(MHz)Leakage (dBm)Leakage (dBm)Leakage (dBm)Leakage (dBm)
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may effect device reliability.
2
A portion of the device power is dissipated by the external bias resistors R3 and R4.
9, 10LOIP/LOIMDifferential local oscillator (LO) input pins.
Typically ac-coupled.
6PWDNPower-down interface. Connect pin to
ground for normal operating mode. Connect
pin to supply for power-down mode.
4DCPLBias rail decoupling capacitor connection
for LO Driver.
5VPOSPositive supply voltage (VS), 4.5 V to 5.5 V.
Ensure adequate supply bypassing for proper
device operation as shownin Figure 24.
1, 7, 8,COMMConnect to low impedance circuit ground.
11, 14
LOIP
LOIM
360mV
360mV
PWDN
DC
DC
VPOS
5V
DC
25k
VPOS
5V
DC
400
BIAS
CELL
VBIAS
400
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8343 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.