Difference amplifier, gains of ½, 1, or 2
Single-ended amplifier: over 40 different gains
Set reference voltage at midsupply
Excellent ac specifications
15 MHz bandwidth
30 V/μs slew rate
High accuracy dc performance
0.08% maximum gain error
10 ppm/°C maximum gain drift
80 dB minimum CMRR (gain of 2)
10-lead MSOP package
Supply current: 2.6 mA
Supply range: ±2.5 V to ±18 V
APPLICATIONS
ADC driver
Instrumentation amplifier building blocks
Level translators
Automatic test equipment
High performance audio
Sine/cosine encoders
Precision Difference Amplifier
AD8271
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
10kΩ
10kΩ
10kΩ
10
N3
9
N2
N1
8
OUT
7
6
+V
S
07363-001
1
P1
2
P2
P3
3
4
P4
5
–V
S
10kΩ
10kΩ
20kΩ
20kΩ
AD8271
GENERAL DESCRIPTION
The AD8271 is a low distortion, precision difference amplifier
with internal gain setting resistors. With no external components,
it can be configured as a high performance difference amplifier
with gains of ½, 1, or 2. It can also be configured in over 40 singleended configurations, with gains ranging from −2 to +3.
The AD8271 comes in a 10-lead MSOP package. The AD8271
operates on both single and dual supplies and requires only a
2.6 mA maximum supply current. It is specified over the industrial
temperature range of −40°C to +85°C and is fully RoHS compliant.
For a dual channel version of the AD8271, see the AD8270
data sheet.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
B Grade A Grade
Parameter Conditions Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth 15 15 MHz
Slew Rate 30 30 V/μs
Settling Time to 0.01% VS = ±15, 10 V step on output 700 800 700 800 ns
V
Settling Time to 0.001% VS = ±15, 10 V step on output 750 900 750 900 ns
V
NOISE/DISTORTION
Harmonic Distortion + Noise
Voltage Noise1 f = 0.1 Hz to 10 Hz 1.5 1.5 μV p-p
f = 1 kHz 38 38 nV/√Hz
GAIN
Gain Error V
Gain Drift TA = −40°C to +85°C 1 2 1 10 ppm/°C
Gain Nonlinearity
INPUT CHARACTERISTICS
2
Offset
300 600 300 1000 μV
Average Temperature Drift TA = −40°C to +85°C 2 2 μV/°C
Common-Mode Rejection Ratio DC to 1 kHz 80 92 74 92 dB
Power Supply Rejection Ratio 2 10 2 10 μV/V
Input Voltage Range
Common-Mode Resistance
Bias Current Inputs grounded 500 500 nA
OUTPUT CHARACTERISTICS
Output Swing VS = ±15 −13.8 +13.8 −13.8 +13.8 V
V
V
V
Short-Circuit Current Limit Sourcing 100 100 mA
Sinking 60 60 mA
POWER SUPPLY
Supply Current 2.3 2.6 2.3 2.6 mA
T
1
Includes amplifier voltage and current noise, as well as noise of internal resistors.
2
Includes input bias and offset errors.
3
At voltages beyond the rails, internal ESD diodes begin to turn on. In some configurations, the input voltage range may be limited by the internal op amp (see the
4
Internal resistors, trimmed to be ratio matched, have ±20% absolute accuracy. Common-mode resistance was calculated with both inputs in parallel. The common-
mode impedance at only one input is 2× the resistance listed.
= 0 V, G = 1, R
REF
3
−V
4
10 10 kΩ
section for details). Input Voltage Range
= 2 kΩ, TA = 25°C, specifications referred to input (RTI), unless otherwise noted.
LOAD
= ±5, 5 V step on output 550 650 550 650 ns
S
= ±5, 5 V step on output 600 750 600 750 ns
S
= ±15, f = 1 kHz,
V
S
= 10 V p-p, R
V
OUT
= ±5, f = 1 kHz,
V
S
= 10 V p-p, R
V
OUT
= 10 V p-p 0.02 0.05 %
OUT
= 10 V p-p,
V
OUT
= 10 kΩ, 2 kΩ, 600 Ω
R
LOAD
= ±15, TA = −40°C to +85°C −13.7 +13.7 −13.7 +13.7 V
S
= ±5 −4 +4 −4 +4 V
S
= ±5, TA = −40°C to +85°C −3.9 +3.9 −3.9 +3.9 V
S
= −40°C to +85°C 3.2 3.2 mA
A
LOAD
LOAD
= 600 Ω
= 600 Ω
110 110 dB
141 141 dB
1 1 ppm
− 0.4 +VS + 0.4 −VS − 0.4 +VS + 0.4 V
S
Rev. 0 | Page 3 of 20
AD8271
VS = ±5 to ±15 V, V
Table 3.
B Grade A Grade
Parameter Conditions Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth 20 20 MHz
Slew Rate 30 30 V/μs
Settling Time to 0.01% VS = ±15, 10 V step on output 700 800 700 800 ns
V
Settling Time to 0.001% VS = ±15, 10 V step on output 750 900 750 900 ns
V
NOISE/DISTORTION
Harmonic Distortion + Noise
Voltage Noise1 f = 0.1 Hz to 10 Hz 2 2 μV p-p
f = 1 kHz 52 52 nV/√Hz
GAIN
Gain Error V
Gain Drift TA = −40°C to +85°C 0.5 2 1 10 ppm/°C
Gain Nonlinearity
INPUT CHARACTERISTICS
2
Offset
450 1000 450 1500 μV
Average Temperature Drift TA = −40°C to +85°C 3 3 μV/°C
Common-Mode Rejection Ratio DC to 1 kHz 74 86 70 86 dB
Power Supply Rejection Ratio 2 10 2 10 μV/V
Input Voltage Range
Common-Mode Resistance
Bias Current Inputs grounded 500 500 nA
OUTPUT CHARACTERISTICS
Output Swing VS = ±15 −13.8 +13.8 −13.8 +13.8 V
V
V
V
Short-Circuit Current Limit Sourcing 100 100 mA
Sinking 60 60 mA
POWER SUPPLY
Supply Current 2.3 2.6 2.3 2.6 mA
T
1
Includes amplifier voltage and current noise, as well as noise of internal resistors.
2
Includes input bias and offset errors.
3
At voltages beyond the rails, internal ESD diodes begin to turn on. In some configurations, the input voltage range may be limited by the internal op amp (see the
4
Internal resistors, trimmed to be ratio matched, have ±20% absolute accuracy. Common-mode resistance was calculated with both inputs in parallel. The common-
mode impedance at only one input is 2× the resistance listed.
= 0 V, G = ½, R
REF
3
−V
4
7.5 7.5 kΩ
section for details). Input Voltage Range
= 2 kΩ, TA = 25°C, specifications referred to input (RTI), unless otherwise noted.
LOAD
= ±5, 5 V step on output 550 650 550 650 ns
S
= ±5, 5 V step on output 600 750 600 750 ns
S
= ±15, f = 1 kHz,
V
S
= 10 V p-p, R
V
OUT
= ±5, f = 1 kHz,
V
S
= 10 V p-p, R
V
OUT
= 10 V p-p 0.04 0.08 %
OUT
= 10 V p-p,
V
OUT
= 10 kΩ, 2 kΩ, 600 Ω
R
LOAD
= ±15, TA = −40°C to +85°C −13.7 +13.7 −13.7 +13.7 V
S
= ±5 −4 +4 −4 +4 V
S
= ±5, TA = −40°C to +85°C −3.9 +3.9 −3.9 +3.9 V
S
= −40°C to +85°C 3.2 3.2 mA
A
LOAD
LOAD
= 600 Ω
= 600 Ω
74 74 dB
101 101 dB
200 200 ppm
− 0.4 +VS + 0.4 −VS − 0.4 +VS + 0.4 V
S
Rev. 0 | Page 4 of 20
AD8271
VS = ±5 to ±15 V, V
Table 4.
B Grade A Grade
Parameter Conditions Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
Bandwidth 10 10 MHz
Slew Rate 30 30 V/μs
Settling Time to 0.01% VS = ±15, 10 V step on output 700 800 700 800 ns
V
Settling Time to 0.001% VS = ±15, 10 V step on output 750 900 750 900 ns
V
NOISE/DISTORTION
Harmonic Distortion + Noise
Voltage Noise1 f = 0.1 Hz to 10 Hz 1 1 μV p-p
f = 1 kHz 26 26 nV/√Hz
GAIN
Gain Error V
Gain Drift TA = −40°C to +85°C 0.5 2 1 10 ppm/°C
Gain Nonlinearity
INPUT CHARACTERISTICS
2
Offset
225 500 225 750 μV
Average Temperature Drift TA = −40°C to +85°C 1.5 1.5 μV/°C
Common-Mode Rejection Ratio DC to 1 kHz 84 98 78 98 dB
Power Supply Rejection Ratio 2 10 2 10 μV/V
Input Voltage Range
Common-Mode Resistance
Bias Current Inputs grounded 500 500 nA
OUTPUT CHARACTERISTICS
Output Swing VS = ±15 −13.8 +13.8 −13.8 +13.8 V
V
V
V
Short-Circuit Current Limit Sourcing 100 100 mA
Sinking 60 60 mA
POWER SUPPLY
Supply Current 2.3 2.6 2.3 2.6 mA
T
1
Includes amplifier voltage and current noise, as well as noise of internal resistors.
2
Includes input bias and offset errors.
3
At voltages beyond the rails, internal ESD diodes begin to turn on. In some configurations, the input voltage range may be limited by the internal op amp (see the
4
Internal resistors, trimmed to be ratio matched, have ±20% absolute accuracy. Common-mode resistance was calculated with both inputs in parallel. The common-
mode impedance at only one input is 2× the resistance listed.
= 0 V, G = 2, R
REF
3
−V
4
7.5 7.5 kΩ
section for details). Input Voltage Range
= 2 kΩ, TA = 25°C, specifications referred to input (RTI), unless otherwise noted.
LOAD
= ±5, 5 V step on output 550 650 550 650 ns
S
= ±5, 5 V step on output 600 750 600 750 ns
S
= ±15, f = 1 kHz,
V
S
= 10 V p-p, R
V
OUT
= ±5, f = 1 kHz,
V
S
= 10 V p-p, R
V
OUT
= 10 V p-p 0.04 0.08 %
OUT
= 10 V p-p,
V
OUT
= 10 kΩ, 2 kΩ, 600 Ω
R
LOAD
= ±15, TA = −40°C to +85°C −13.7 +13.7 −13.7 +13.7 V
S
= ±5 −4 +4 −4 +4 V
S
= ±5, TA = −40°C to +85°C −3.9 +3.9 −3.9 +3.9 V
S
= −40°C to +85°C 3.2 3.2 mA
A
LOAD
LOAD
= 600 Ω
= 600 Ω
86 86 dB
112 112 dB
50 50 ppm
− 0.4 +VS + 0.4 −VS − 0.4 +VS + 0.4 V
S
Rev. 0 | Page 5 of 20
AD8271
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter Rating
Supply Voltage ±18 V
Output Short-Circuit Current
Input Voltage Range
See derating curve in
Figure 2
+ 0.4 V to
+V
S
−V
− 0.4 V
S
Storage Temperature Range −65°C to +130°C
Specified Temperature Range −40°C to +85°C
Package Glass Transition Temperature (TG) 150°C
ESD
Human Body Model 1 kV
Charge Device Model 1 kV
Machine Model 0.1 kV
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
Table 6. Thermal Resistance
Package Type θJA θ
10-Lead MSOP 141.9 43.7 °C/W
The θJA values in Table 6 assume a 4-layer JEDEC standard
board with zero airflow.
Unit
JC
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8271 is limited
by the associated rise in junction temperature (T
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance of the amplifiers. Exceeding a temperature of 150°C for
an extended period of time can cause changes in silicon devices,
potentially resulting in a loss of functionality.
The AD8271 has built-in short-circuit protection that limits
the output current to approximately 100 mA (see Figure 22 for
more information). Although the short-circuit condition itself
does not damage the part, the heat generated by the condition
can cause the part to exceed its maximum junction temperature,
with corresponding negative effects on reliability.
1.6
1.4
1.2
1.0
0.8
0.6
0.4
MAXIMUM POWER DISSIPATION (W)
0.2
0
–50–250255075100125
Figure 2. Maximum Power Dissipation vs. Ambient Temperature
AMBIENT TEMPERATURE (C)
TJ MAX = 150°C
) on the die. At
J
07363-102
ESD CAUTION
Rev. 0 | Page 6 of 20
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