FEATURES
Fully Buffered Inputs and Outputs
Fast Channel-to-Channel Switching: 15 ns
High Speed
380 MHz Bandwidth (–3 dB) 200 mV p-p
310 MHz Bandwidth (–3 dB) 2 V p-p
1000 V/s Slew Rate G = +1, 2 V Step
1150 V/s Slew Rate G = +2, 2 V Step
Fast Settling Time of 15 ns to 0.1%
Low Power: 25 mA
Excellent Video Specifications (R
Gain Flatness of 0.1 dB to 90 MHz
0.01% Differential Gain Error
0.02ⴗ Differential Phase Error
Low All-Hostile Crosstalk –84 dB @ 5 MHz
–54 dB @ 50 MHz
Low Channel-to-Channel Crosstalk –56 dB @ 100 MHz
High “OFF” Isolation of –100 dB @ 10 MHz
Low Cost
Fast High Impedance Output Disable Feature for
Connecting Multiple Devices
= 150 ⍀)
L
Triple 2:1 Multiplexers
AD8183/AD8185*
FUNCTIONAL BLOCK DIAGRAM
IN0A
DGND
IN1A
GND
IN2A
V
V
IN2B
GND
IN1B
GND
IN0B
1
2
3
4
5
6
CC
7
EE
8
9
10
11
12
AD8183/AD8185
SELECT
DISABLE
0
1
2
24
23
22
21
20
19
18
17
16
15
14
13
V
OE
SEL A/B
V
OUT0
V
OUT1
V
OUT2
V
DVCC
V
CC
CC
EE
CC
EE
CC
APPLICATIONS
Pixel Switching for “Picture-In-Picture”
Switching RGB in LCD and Plasma Displays
RGB Video Switchers and Routers
PRODUCT DESCRIPTION
The AD8183 (G = +1) and AD8185 (G = +2) are high speed
triple 2:1 multiplexers. They offer –3 dB signal bandwidth up to
380 MHz, along with slew rate of 1000 V/µs. With better than
–90 dB of channel-to-channel crosstalk and isolation at 10 MHz,
they are useful in many high-speed applications. The differential
gain and differential phase errors of 0.01% and 0.02° respectively,
along with 0.1 dB flatness to 90 MHz make the AD8183 and
AD8185 ideal for professional video and RGB multiplexing. They
offer 15 n s channel-to-channel switching time, making them
an excellent choice for switching video signals, while consuming
less than 25 mA on ±5 V supply voltages.
Both devices offer a high speed disable feature that can set the
output into a high impedance state. This allows the building of
larger input arrays while minimizing “OFF” channel output
loading. They operate on voltage supplies of ±5 V and are offered
in a 24-lead TSSOP package.
Table I. Truth Table
SEL A/BOEOUT
00INA
10INB
01High Z
11High Z
VO = 1.4V STEP
1.4V
= 150V
R
L
1.2V
1.0V
0.8V
0.6V
0.4V
0.2V
0.0V
200mV
2ns
Figure 1. AD8185 Pulse Response; RL = 150
Ω
*Patents pending.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Storage Temperature Range . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air (T
3
24-lead plastic TSSOP; θJA = 128°C/W. Maximum internal power dissipation (P
should be derated for ambient temperature (TA) such that P
= 25°C).
A
< (150°C–TA)/θ
D
)
D
.
JA
ORDERING GUIDE
TemperaturePackagePackage
ModelRangeDescriptionOption
AD8183ARU–40°C to +85°C24-Lead Plastic TSSOP RU-24
AD8185ARU–40°C to +85°C24-Lead Plastic TSSOP RU-24
The maximum power that can be safely dissipated by the AD8183/
AD8185 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this
limit may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceeding
a junction temperature of 175°C for an extended period can
result in device failure.
While the AD8183/AD8185 is internally short circuit protected,
this may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves shown in Figure 2.
Figure 2. Maximum Power Dissipation vs. Temperature
PIN CONFIGURATION
1
IN0AV
2
DGND
3
IN1A
4
GNDV
IN2AOUT0
V
V
IN2BV
GNDOUT2
IN1BV
GNDDVCC
IN0BV
CC
EE
AD8183/
5
AD8185
6
TOP VIEW
(Not to Scale)
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
CC
OE
SEL A/B
CC
V
EE
OUT1
CC
EE
CC
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8183/AD8185 features proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. 0
–3–
AD8183/AD8185
FREQUENCY – MHz
2
0.1
NORMALIZED GAIN – dB
1
0
–1
–2
–3
–4
–5
–6
–7
–8
1101001k
GAIN
FLATNESS
V
O
AS SHOWN
R
L
= 1kV
200mV p-p
2V p-p
200mV p-p
2V p-p
0.1
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
NORMALIZED FLATNESS – dB
0.2
0.3
FREQUENCY – MHz
4
0.1
NORMALIZED GAIN – dB
3
2
1
0
–1
–2
–3
–4
–5
–6
1101001k
VO = 200mV p-p
R
L
= 150V
C
L
= 5pF
TEMPERATURE AS SHOWN
+85 C
+25 C
–40 C
1
0
–1
–2
–3
–4
GAIN – dB
–5
V
–6
R
–7
–8
–9
0.1
AS SHOWN
O
= 150V
L
GAIN
FLATNESS
200mV p-p
2V p-p
1101001k
FREQUENCY – MHz
200mV p-p
2V p-p
0.1
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
Figure 3. AD8183 Frequency Response; RL = 150
1
0
–1
–2
–3
–4
GAIN – dB
–5
–6
–7
–8
–9
0.1
V
AS SHOWN
O
= 1kV
R
L
GAIN
FLATNESS
200mV p-p
1101001k
FREQUENCY – MHz
2V p-p
2V p-p
200mV p-p
0.3
0.2
0.1
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
Figure 4. AD8183 Frequency Response; RL = 1 k
FLATNESS – dB
Ω
FLATNESS – dB
Ω
1
0
–1
–2
–3
–4
–5
AS SHOWN
V
O
–6
= 150V
R
NORMALIZED GAIN – dB
L
–7
–8
–9
0.1
GAIN
FLATNESS
200mV p-p
2V p-p
1101001k
FREQUENCY – MHz
200mV p-p
2V p-p
0.1
0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
Figure 6. AD8185 Frequency Response; RL = 150
Figure 7. AD8185 Frequency Response; RL = 1 k
NORMALIZED FLATNESS – dB
Ω
Ω
5
4
3
2
1
0
GAIN – dB
–1
–2
–3
–4
–5
0.1
Figure 5. AD8183 Frequency Response vs. Temperature
VO = 200mV p-p
= 1kV
R
L
= 5pF
C
L
TEMPERATURE AS SHOWN
1101001k
FREQUENCY – MHz
+25 C
+85 C
–40 C
Figure 8. AD8185 Frequency Response vs. Temperature
–4–
REV. 0
–10
FREQUENCY – MHz
–10
1
CROSSTALK – dB
–20
–30
–40
–50
–60
–70
–80
–90
–100
–110
101001k
R
L
= 150V
R
T
= 37.5V
RTI MEASURED
ALL-HOSTILE
ADJACENT
FREQUENCY – MHz
–10
1
CHANNEL-TO-CHANNEL CROSSTALK – dB
–20
–30
–40
–50
–60
–70
–80
–90
–100
–110
101001k
RL = 150V
R
T
= 37.5V
RTI MEASURED
DRIVE A, LISTEN B
DRIVE B, LISTEN A
FUNDAMENTAL FREQUENCY – MHz
0
1
DISTORTION – dBc
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
10100
VO = 2V p-p
R
L
= 150V
SECOND HARMONIC
THIRD HARMONIC
= 1kV
R
L
–20
= 37.5V
R
T
–30
–40
–50
–60
–70
CROSSTALK – dB
–80
–90
–100
–110
1
ALL-HOSTILE
ADJACENT
101001k
FREQUENCY – MHz
Figure 9. AD8183 Crosstalk vs. Frequency
–10
= 1kV
R
L
–20
–30
–40
–50
–60
–70
–80
–90
–100
CHANNEL-TO-CHANNELCROSSTALK – dB
–110
= 37.5V
R
T
DRIVE B, LISTEN A
DRIVE A, LISTEN B
1
101001k
FREQUENCY – MHz
Figure 10. AD8183 Channel-to-Channel Crosstalk vs.
Frequency
AD8183/AD8185
Figure 12. AD8185 Crosstalk vs. Frequency
Figure 13. AD8185 Channel-to-Channel Crosstalk vs.
Frequency
0
= 2V p-p
V
O
–10
= 150V
R
L
–20
–30
–40
–50
–60
DISTORTION – dBc
–70
–80
–90
–100
1
Figure 11. AD8183 Distortion vs. Frequency
REV. 0
SECOND HARMONIC
THIRD HARMONIC
FUNDAMENTAL FREQUENCY – MHz
10100
Figure 14. AD8185 Distortion vs. Frequency
–5–
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