Analog Devices AD811AR-16-REEL7, AD811AR-16-REEL, AD811AR-16, AD811AN, AD811ACHIPS Datasheet

High Performance

1
2
3
4

8
7
6
5

AD811

32

12019

18
17
16
15
14

9

10 11

12 13

4
5
6
7
8

AD811

NC
NC

+V

S

NC
OUTPUT

–V

S

NC

NC
NC

NC

–IN

+IN

NC

NC

NC

NC

NC

NC
–IN
+IN

–V

S

NC

OUTPUT
NC

+V

S

NC = NO CONNECT

NC = NO CONNECT

NCNCNC

a

FEATURES
High Speed

140 MHz Bandwidth (3 dB, G = +1)
120 MHz Bandwidth (3 dB, G = +2)
35 MHz Bandwidth (0.1 dB, G = +2)
2500 V/␮s Slew Rate
25 ns Settling Time to 0.1% (For a 2 V Step)
65 ns Settling Time to 0.01% (For a 10 V Step)

Excellent Video Performance (R

0.01% Differential Gain, 0.01ⴗ Differential Phase

Voltage Noise of 1.9 nV√Hz

Low Distortion: THD = –74 dB @ 10 MHz
Excellent DC Precision

3 mV max Input Offset Voltage

Flexible Operation

Specified for ⴞ5 V and ⴞ15 V Operation
ⴞ2.3 V Output Swing into a 75 ⍀ Load (V

APPLICATIONS
Video Crosspoint Switchers, Multimedia Broadcast

Systems
HDTV Compatible Systems
Video Line Drivers, Distribution Amplifiers
ADC/DAC Buffers
DC Restoration Circuits
Medical—Ultrasound, PET, Gamma and Counter

Applications

PRODUCT DESCRIPTION

The AD811 is a wideband current-feedback operational ampli­fier, optimized for broadcast quality video systems. The –3 dB
bandwidth of 120 MHz at a gain of +2 and differential gain and

phase of 0.01% and 0.01° (R

= 150 Ω) make the AD811 an

L

excellent choice for all video systems. The AD811 is designed to
meet a stringent 0.1 dB gain flatness specification to a band­width of 35 MHz (G = +2) in addition to the low differential
gain and phase errors. This performance is achieved whether

driving one or two back terminated 75 Ω cables, with a low

power supply current of 16.5 mA. Furthermore, the AD811 is

specified over a power supply range of ±4.5 V to ±18 V.

0.10

0.09

0.08

%

0.07

0.06

0.05

0.04

0.03

DIFFERENTIAL GAIN –

0.02

0.01

REV. D

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

GAIN

6

5

PHASE

SUPPLY VOLTAGE –

=150 ⍀)

L

RF = 649V

= 3.58MHz

F

C

100 IRE
MODULATED RAMP
R

= 150V

L

6

Volts

= ⴞ5 V)

S

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

DIFFERENTIAL PHASE – Degrees

0.02

15

1413121110987

Video Op Amp

AD811

CONNECTION DIAGRAMS

8-Lead Plastic (N-8)

Cerdip (Q-8)

SOIC (SO-8) Packages

16-Lead SOIC (R-16) Package 20-Lead SOIC (R-20) Package

1

NC
NC

2
3

–IN
NC

4

+IN

5

NC

6
7

–V

S

AD811

8

NC

NC = NO CONNECT

The AD811 is also excellent for pulsed applications where tran­sient response is critical. It can achieve a maximum slew rate of

greater than 2500 V/µs with a settling time of less than 25 ns to

0.1% on a 2 volt step and 65 ns to 0.01% on a 10 volt step.

The AD811 is ideal as an ADC or DAC buffer in data acquisi­tion systems due to its low distortion up to 10 MHz and its wide
unity gain bandwidth. Because the AD811 is a current feedback
amplifier, this bandwidth can be maintained over a wide range
of gains. The AD811 also offers low voltage and current noise of

1.9 nV/√Hz and 20 pA/√Hz, respectively, and excellent dc accu-

racy for wide dynamic range applications.

12

G = +2
R

9

R

6

3

GAIN – dB

0

–3

–6

1M

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

20-Lead LCC (E-20A) Package

1

16
15
14
13
12
11
10

9

= 150V

L

= R

G

NC
NC
+V

S

NC
OUTPUT

NC
NC
NC

FB

NC

2

NC

3

NC

4

–IN

NC

5

+IN

6
7

NC

–V

8

S

9

NC

10

NC

NC = NO CONNECT

VS = 615V

VS = 65V

10M 100M

FREQUENCY – Hz

AD811

20
19
18

17

16
15

14
13
12
11

NC
NC
NC
+V

S

NC
OUTPUT
NC
NC
NC

NC

AD811–SPECIFICATIONS

(@ TA = +25ⴗC and VS = ⴞ15 V dc, R

Model Conditions V

S

Min Typ Max Min Typ Max Units

= 150 Ω unless otherwise noted)

LOAD

AD811J/A

1

AD811S

2

DYNAMIC PERFORMANCE

Small Signal Bandwidth (No Peaking)

–3 dB

G = +1 R
G = +2 R
G = +2 R
G = +10 R

0.1 dB Flat
G = +2 R

Full Power Bandwidth

3

Slew Rate V

Settling Time to 0.1% 10 V Step, A
Settling Time to 0.01% 65 65 ns
Settling Time to 0.1% 2 V Step, A
Rise Time, Fall Time R
Differential Gain f = 3.58 MHz ±15 V 0.01 0.01 %

= 562 Ω±15 V 140 140 MHz

FB

= 649 Ω±15 V 120 120 MHz

FB

= 562 Ω±5 V 80 80 MHz

FB

= 511 Ω±15 V 100 100 MHz

FB

= 562 Ω±5 V 25 25 MHz

FB

= 649 Ω±15 V 35 35 MHz

R

FB

V

= 20 V p-p ±15 V 40 40 MHz

OUT

= 4 V p-p ±5 V 400 400 V/µs

OUT

= 20 V p-p ±15 V 2500 2500 V/µs

V

OUT

= 649, A

FB

= –1 ±15 V 50 50 ns

V

= –1 ±5 V 25 25 ns

V

= +2 ±15 V 3.5 3.5 ns

V

Differential Phase f = 3.58 MHz ±15 V 0.01 0.01 Degree
THD @ f
Third Order Intercept

= 10 MHz V

C

4

= 2 V p-p, A

OUT

@ f

= 10 MHz ±5 V 36 36 dBm

C

= +2 ± 15 V –74 –74 dBc

V

±15 V 43 43 dBm

INPUT OFFSET VOLTAGE ±5 V, ±15 V 0.5 3 0.5 3 mV

to T

T

MIN

Offset Voltage Drift 55µV/°C

MAX

55mV

INPUT BIAS CURRENT

–Input ±5 V, ±15 V 2 5 2 5 µA

to T

T

MIN

+Input ±5 V, ±15 V 2 10 2 10 µA

T

TRANSRESISTANCE T

MAX

to T

MIN

MAX

to T

MIN

MAX

V

= ±10 V

OUT

= ∞±15 V 0.75 1.5 0.75 1.5 MΩ

R

L

= 200 Ω±15 V 0.5 0.75 0.5 0.75 MΩ

R

L

= ±2.5 V

V

OUT

R

= 150 Ω±5 V 0.25 0.4 0.125 0.4 MΩ

L

15 30 µA
20 25 µA

COMMON-MODE REJECTION

(vs. Common Mode)

V

OS

to T

T

MIN

MAX

to T

T

MIN

Input Current (vs. Common Mode) T

MAX

POWER SUPPLY REJECTION V

V

OS

+Input Current T
–Input Current T

V

= ±2.5 ±5 V 56 60 50 60 dB

CM

V

= ±10 V ±15 V 60 66 56 66 dB

CM

to T

MIN

MAX

= ±4.5 V to ±18 V

S

T

to T

MIN

MAX

to T

MIN

MAX

to T

MIN

MAX

60 70 60 70 dB

13 1 3µA/V

0.3 2 0.3 2 µA/V

0.4 2 0.4 2 µA/V
INPUT VOLTAGE NOISE f = 1 kHz 1.9 1.9 nV/√Hz
INPUT CURRENT NOISE f = 1 kHz 20 20 pA/√Hz

OUTPUT CHARACTERISTICS

Voltage Swing, Useful Operating Range

5

±5 V ±2.9 ±2.9 V
±15 V ±12 ±12 V

Output Current T
Short-Circuit Current 150 150 mA

= +25°C 100 100 mA

J

Output Resistance (Open Loop @ 5 MHz) 9 9 Ω

INPUT CHARACTERISTICS

+Input Resistance 1.5 1.5 MΩ
–Input Resistance 14 14 Ω
Input Capacitance +Input 7.5 7.5 pF
Common-Mode Voltage Range ±5 V ±3 ±3V

±15 V ±13 ±13 V

POWER SUPPLY

Operating Range ±4.5 ±18 ±4.5 ±18 V
Quiescent Current ±5 V 14.5 16.0 14.5 16.0 mA

±15 V 16.5 18.0 16.5 18.0 mA

TRANSISTOR COUNT # of Transistors 40 40

NOTES

1

The AD811JR is specified with ±5 V power supplies only, with operation up to ±12 volts.

2

See Analog Devices’ military data sheet for 883B tested specifications.

3

FPBW = slew rate/(2 π V

4

Output power level, tested at a closed loop gain of two.

5

Useful operating range is defined as the output voltage at which linearity begins to degrade.

Specifications subject to change without notice.

PEAK

).

–2–

REV. D

AD811

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

AD811JR Grade Only . . . . . . . . . . . . . . . . . . . . . . . . .±12 V

Internal Power Dissipation

2

. . . . . . . . Observe Derating Curves

Output Short Circuit Duration . . . . . Observe Derating Curves

Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . .±6 V

Storage Temperature Range (Q, E) . . . . . . . . –65°C to +150°C

Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C

Operating Temperature Range

AD811J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0°C to +70°C

AD811A . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

AD811S . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C

Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

8-Lead Plastic Package: θJA = 90°C/W

8-Lead Cerdip Package: θJA = 110°C/W
8-Lead SOIC Package: θJA = 155°C/W
16-Lead SOIC Package: θJA = 85°C/W
20-Lead SOIC Package: θJA = 80°C/W
20-Lead LCC Package: θJA = 70°C/W

ORDERING GUIDE

Temperature Package

Model Range Option*

AD811AN –40°C to +85°C N-8
AD811AR-16 –40°C to +85°C R-16
AD811AR-20 –40°C to +85°C R-20
AD811JR 0°C to +70°C SO-8
AD811SQ/883B –55°C to +125°C Q-8
5962-9313101MPA –55°C to +125°C Q-8
AD811SE/883B –55°C to +125°C E-20A
5962-9313101M2A –55°C to +125°C E-20A
AD811JR-REEL 0°C to +70°C SO-8
AD811JR-REEL7 0°C to +70°C SO-8
AD811AR-16-REEL –40°C to +85°C R-16
AD811AR-16-REEL7 –40°C to +85°C R-16
AD811AR-20-REEL –40°C to +85°C R-20
AD811ACHIPS –40°C to +85°CDie
AD811SCHIPS –55°C to +125°CDie

*E = Ceramic Leadless Chip Carrier; N = Plastic DIP; Q = Cerdip; SO (R) =

Small Outline IC (SOIC).

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD811 is limited by the associated rise in junction temperature.
For the plastic packages, the maximum safe junction tempera-

ture is +145°C. For the cerdip and LCC packages, the maxi­mum junction temperature is +175°C. If these maximums are

exceeded momentarily, proper circuit operation will be restored
as soon as the die temperature is reduced. Leaving the device in
the “overheated” condition for an extended period can result in
device burnout. To ensure proper operation, it is important to
observe the derating curves in Figures 17 and 18.

While the AD811 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem­perature is not exceeded under all conditions. One important
example is when the amplifier is driving a reverse terminated

75 Ω cable and the cable’s far end is shorted to a power supply.
With power supplies of ±12 volts (or less) at an ambient tem­perature of +25°C or less, if the cable is shorted to a supply rail,

then the amplifier will not be destroyed, even if this condition
persists for an extended period.

ESD SUSCEPTIBILITY

ESD (electrostatic discharge) sensitive device. Electrostatic
charges as high as 4000 volts, which readily accumulate on the
human body and on test equipment, can discharge without
detection. Although the AD811 features proprietary ESD pro­tection circuitry, permanent damage may still occur on these
devices if they are subjected to high energy electrostatic dis­charges. Therefore, proper ESD precautions are recommended
to avoid any performance degradation or loss of functionality.

METALIZATION PHOTOGRAPH

Contact Factory for Latest Dimensions.

Dimensions Shown in Inches and (mm).

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD811 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

REV. D

–3–

AD811–Typical Performance Characteristics

20

TA = +258C

15

10

5

COMMON-MODE VOLTAGE RANGE – 6Volts

0

020

5

SUPPLY VOLTAGE – 6Volts

10

15

Figure 1. Input Common-Mode Voltage Range vs. Supply

35

30

VS = 615V

25

20

15

10

OUTPUT VOLTAGE – Volts p–p

5

VS = 65V

20

TA = +258C

15

10

5

MAGNITUDE OF THE OUTPUT VOLTAGE – 6 Volts

0

020

NO LOAD

= 150V

R

L

5

SUPPLY VOLTAGE – 6 Volts

10

15

Figure 4. Output Voltage Swing vs. Supply

21

18

15

12

9

6

QUIESCENT SUPPLY CURRENT – mA

VS = 615V

VS = 65V

0

10

100
LOAD RESISTANCE – V

1k

10k

Figure 2. Output Voltage Swing vs. Resistive Load

10

NONINVERTING INPUT

65 TO 615V

0

INVERTING

–10

–20

INPUT BIAS CURRENT – mA

–30

–40

–60 140

JUNCTION TEMPERATURE – 8C

INPUT

VS = 615V

VS = 65V

100 120806040200–20

Figure 3. Input Bias Current vs. Junction Temperature

3
–60

–40

200–20

JUNCTION TEMPERATURE – 8C

60

40 100

80

120

140

Figure 5. Quiescent Supply Current vs. Junction
Temperature

10

8

6

4
2

0

–2
–4

INPUT OFFSET VOLTAGE – mV

–6

–8

–10

–40

–60

JUNCTION TEMPERATURE – 8C

VS = 65V

VS = 615V

120100806040200–20

140

Figure 6. Input Offset Voltage vs. Junction Temperature

REV. D–4–

AD811

200

0

1.6k

120

40

600

80

400

160

1.4k1.2k1.0k

800

VALUE OF FEEDBACK RESISTOR (RFB) – V

–3dB BANDWIDTH – MHz

PEAKING – dB

8

6

4

2

BANDWIDTH

PEAKING

VO = 1V p–p
V

S

= 615V

R

L

= 150V

GAIN = +2

10

0

250

200

VS = 615V

150

100

SHORT CIRCUIT CURRENT – mA

50

–60

–40

VS = 65V

JUNCTION TEMPERATURE – 8C

100 120806040200–20

140

Figure 7. Short Circuit Current vs. Junction Temperature

10

VS = 65V

1

2.0

1.5

1.0

0.5

TRANSRESISTANCE – MV

0

–60 140

–40

JUNCTION TEMPERATURE – 8C

VS = 65V
R

= 150V

L

= 62.5V

V

OUT

VS = 615V

= 200V

R

L

V

= 610V

OUT

100 120806040200–20

Figure 10. Transresistance vs. Junction Temperature

100

NONINVERTING CURRENT VS = 65 TO 15V

10

INVERTING CURRENT VS = 65 TO 15V

100

10

0.1

CLOSED-LOOP OUTPUT RESISTANCE – V

0.01
10k 100M

100k 10M1M

FREQUENCY – Hz

VS = 615V

GAIN = +2
R

= 649V

FB

Figure 8. Closed-Loop Output Resistance vs. Frequency

10

RISE TIME

8

6

OVERSHOOT

4

RISETIME – ns

2

0
400

Figure 9. Rise Time and Overshoot vs. Value of
Feedback Resistor, R

600

800

VALUE OF FEEDBACK RESISTOR (RFB) – V

FB

VS = 615V
V
R
GAIN = +2

= 1V p–p

O

= 150V

L

1.4k1.2k1.0k

60

40

20

OVERSHOOT – %

0

1.6k

NOISE VOLTAGE – nV/ Hz

1

10

100 100k10k1k

VOLTAGE NOISE VS = 615V

VOLTAGE NOISE VS = 65V

FREQUENCY – Hz

NOISE CURRENT – pA/ Hz

1

Figure 11. Input Noise vs. Frequency

Figure 12. 3 dB Bandwidth and Peaking vs. Value of R

FB

REV. D

–5–