ANALOG DEVICES AD811 Service Manual

–

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High Performance Video Op Amp

FEATURES

High speed

140 MHz bandwidth (3 dB, G = +1) 120 MHz bandwidth (3 dB, G = +2) 35 MHz bandwidth (0.1 dB, G = +2) 2500 V/µs slew rate 25 ns settling time to 0.1% (for a 2 V step) 65 ns settling time to 0.01% (for a 10 V step)

Excellent video performance (R

0.01% differential gain, 0.01° differential phase

Voltage noise of 1.9 nV/√ Low distortion: THD = −74 dB @ 10 MHz Excellent dc precision: 3 mV max input offset voltage Flexible operation

Specified for ±5 V and ±15 V operation

±2.3 V output swing into a 75 Ω load (V

APPLICATIONS

Video crosspoint switchers, multimedia broadcast systems HDTV compatible systems Video line drivers, distribution amplifiers ADC/DAC buffers DC restoration circuits Medical

Ultrasound

PET

Gamma

Counter applications

GENERAL DESCRIPTION

A wideband current feedback operational amplifier, the AD811 is optimized for broadcast-quality video systems. The −3 dB bandwidth of 120 MHz at a gain of +2 and the differential gain and phase of 0.01% and 0.01° (R an excellent choice for all video systems. The AD811 is designed to meet a stringent 0.1 dB gain flatness specification to a bandwidth of 35 MHz (G = +2) in addition to low differential gain and phase errors. This performance is achieved whether driving one or two back-terminated 75 Ω cables, with a low power supply current of 16.5 mA. Furthermore, the AD811 is specified over a power supply range of ±4.5 V to ±18 V. (Continued on page 3)

=150 Ω)

L

Hz

= ±5 V)

S

= 150 Ω) make the AD811

L

AD811

CONNECTION DIAGRAMS

NC

AD811

NC

1232019

AD811

12 13

10 11

S

NC

–V

AD811

NC

8 7

+V

6

OUTPUT

5

NC

16

15

14

13

12

11

10

NC

20

19 18

17

16

15

14

13

12

11

S

NC NC +V NC

OUTPUT NC

NC

9

NC

18

NC

17

NC

16

+V

15

NC

14

OUTPUT

NC NC NC +V NC OUTPUT NC NC NC NC

00866-E-001

S

00866-E-002

S

00866-E-003

S

00866-E-004

1

NC

2

–IN

3

+IN

–V

4

S

AD811

NC = NO CONNECT

Figure 1. 8-Lead Plastic (N-8), CERDIP (Q-8), SOIC (R-8)

1

NC NC

2

3

–IN

4

NC

+IN

5

NC

6

–V

7

S

8

NC

NC = NO CONNECT

Figure 2. 16-Lead SOIC (R-16)

NC

4

NC

5 6

–IN

NC

7 8

+IN

9

NC = NO CONNECT

Figure 3. 20-Terminal LCC (E-20A)

NC

1

2

NC

3

NC

4

–IN NC

5

+IN

6

NC

7

8

V

S

NC

9

10

NC

NC = NO CONNECT

Figure 4. 20-Lead SOIC (R-20)

Rev. E

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

AD811

www.BDTIC.com/ADI

The AD811 is ideal as an ADC or DAC buffer in data acquisition systems due to its low distortion up to 10 MHz and its wide unity gain bandwidth. Because the AD811 is a current feedback amplifier, this bandwidth can be maintained over a wide range of gains. The AD811 also offers low voltage and current noise of

1.9 nV/√

Hz

and 20 pA/√Hz, respectively, and excellent dc accu-

racy for wide dynamic range applications.

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

DIFFERENTIAL GAIN (%)

0.02

0.01

PHASE

GAIN

0

5 6 7 8 9 101112131415

SUPPLY VOLTAGE (±V)

RF = 649Ω F

= 3.58MHz

C

100 IRE MODULATED RAMP R

= 150Ω

L

Figure 5. Differential Gain and Phase

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0

DIFFERENTIAL PHASE (DEGREES)

00866-E-005

12

G = +2

9

R

= 150Ω

L

= R

R

G

FB

6

3

GAIN (dB)

0

–3

–6

1 10 100

FREQUENCY (MHz)

Figure 6. Frequency Response

V

= ±5V

S

VS = ±15V

00866-E-006

Rev. E | Page 3 of 20

AD811

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SPECIFICATIONS

@ TA = +25°C, VS = ±15 V dc, R

Table 1.

AD811J/A Parameter Conditions V

DYNAMIC PERFORMANCE

Small Signal Bandwidth (No Peaking)

−3 dB G = +1 RFB = 562 Ω ±15 V 140 140 MHz G = +2 RFB = 649 Ω ±15 V 120 120 MHz G = +2 RFB = 562 Ω ±15 V 80 80 MHz G = +10 RFB = 511 Ω ±15 V 100 100 MHz

0.1 dB Flat G = +2 RFB = 562 Ω ±15 25 25 MHz

R

Full Power Bandwidth

3

Slew Rate V V Settling Time to 0.1% 10 V Step, AV = − 1 ±15 50 50 ns Settling Time to 0.01% 10 V Step, AV = − 1 ±15 65 65 ns Settling Time to 0.1% 2 V Step, AV = − 1 ±15 25 25 ns Rise Time, Fall Time RFB = 649, AV = +2 ±15 3.5 3.5 ns Differential Gain f = 3.58 MHz ±15 0.01 0.01 % Differential Phase f = 3.58 MHz ±15 0.01 0.01 Degree THD @ fC = 10 MHz V Third-Order Intercept

4

±15 43 43 dBm INPUT OFFSET VOLTAGE ±5 V, ±15 V 0.5 3 0.5 3 mV T

Offset Voltage Drift 5 5 µV/°C

INPUT BIAS CURRENT

−Input ±5 V, ±15 V 2 5 2 5 µA

T

+Input ±5 V, ±1 5 V 2 10 2 10 µA T TRANSRESISTANCE T V R R V R

1

The AD811JR is specified with ±5 V power supplies only, with operation up to ±12 V.

2

See the Analog Devices military data sheet for 883B tested specifications.

3

FPBW = slew rate/(2 π V

4

Output power level, tested at a closed-loop gain of two.

PEAK

).

= 150 Ω, unless otherwise noted.

LOAD

= 649 Ω ±15 35 35 MHz

FB

V

= 20 V p-p ±15 40 40 MHz

OUT

= 4 V p-p ±15 400 400 V/µs

OUT

= 20 V p-p ±15 2500 2500 V/µs

OUT

= 2 V p-p, AV = +2 ±15 −74 −74 dBc

OUT

@ fC = 10 MHz ±15 36 36 dBm

to T

MIN

MAX

to T

MIN

MAX

to T

MIN

MAX

to T

MIN

MAX

= ±10 V

OUT

= ∞ ±15 V 0.75 1.5 0.75 1.5 MΩ

L

= 200 Ω ±15 V 0.5 0.75 0.5 0.75 MΩ

L

= ±2.5 V

OUT

= 150 Ω ±5 V 0.25 0.4 0.125 0.4 MΩ

L

1

S

Min Typ Max Min Typ Max Unit

AD811S

2

5 5 mV

15 30 µA

20 25 µA

Rev. E | Page 4 of 20

AD811

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AD811J/A Parameter Conditions V

Min Typ Max Min Typ Max Unit

s

1

AD811S

COMMON-MODE REJECTION

VOS (vs. Common Mode)

T

to T

MIN

MAX

T

to T

MIN

MAX

Input Current (vs. Common Mode) T

VCM = ±2.5 V ±5 V 56 60 50 60 dB VCM = ±10 V ±15 V 60 66 56 66 dB

MIN

to T

MAX

1 3 1 3 µA/V

POWER SUPPLY REJECTION VS = ±4.5 V to ±18 V

V

OS

+Input Current T

−Input Current T

T

MIN

to T to T to T

MAX

60 70 60 70 dB

0.3 2 0.3 2 µA/V

0.4 2 0.4 2 µA/V

INPUT VOLTAGE NOISE f = 1 kHz 1.9 1.9 INPUT CURRENT NOISE f = 1 kHz 20 20 OUTPUT CHARACTERISTICS

Voltage Swing, Useful Operating Range

3

±5 V ±2.9 ±2.9 V

±15 V ±12 ±12 V

Output Current TJ = 25°C 100 100 mA Short-Circuit Current 150 150 mA

Output Resistance (Open Loop @ 5 MHz) 9 9 Ω

INPUT CHARACTERISTIC

+Input Resistance 1.5 1.5 MΩ

−Input Resistance 14 14 Ω Input Capacitance +Input 7.5 7.5 pF

Common-Mode Voltage Range ±5 V ±3 ±3 V ±15 V ±13 ±13 V POWER SUPPLY

Operating Range ±4.5 ±18 ±4.5 ±18 V

Quiescent Current ±5 V 14.5 16.0 14.5 16.0 mA ±15 V 16.5 18.0 16.5 18.0 mA TRANSISTOR COUNT Number of Transistors 40 40

1

The AD811JR is specified with ±5 V power supplies only, with operation up to ±12 V.

2

See the Analog Devices military data sheet for 883B tested specifications.

3

Useful operating range is defined as the output voltage at which linearity begins to degrade.

2

nV/√ pA/√

Hz Hz

Rev. E | Page 5 of 20

AD811

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ABSOLUTE MAXIMUM RATINGS

Table 2.

Parameter Rating

Supply Voltage ±18 V

AD811JR Grade Only ±12 V

Internal Power Dissipation Observe Derating Curves

8-Lead PDIP Package θJA = 90°C/ W 8-Lead CERDIP Package θJA = 110°C/W 8-Lead SOIC Package θJA = 155°C/W 16-Lead SOIC Package θJA = 85°C/W 20-Lead SOIC Package θJA = 80°C/W

20-Lead LCC Package θJA = 70°C/W Output Short-Circuit Duration Observe Derating Curves Common-Mode Input Voltage ±V Differential Input Voltage ±6 V Storage Temperature Range (Q, E) −65°C to +150°C Storage Temperature Range (N, R) −65°C to +125°C Operating Temperature Range

AD811J 0°C to +70°C

AD811A −40°C to +85°C

AD811S −55°C to +125°C Lead Temperature Range

(Soldering 60 sec)

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

S

300°C

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD811 is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 145°C. For the CERDIP and LCC packages, the maximum junction temperature is 175°C. If these maximums are exceeded momentarily, proper circuit operation is restored as soon as the die temperature is reduced. Leaving the device in the “overheated” condition for an extended period can result in device burnout. To ensure proper operation, it is important to observe the derating curves in Figure 22 and Figure 25.

While the AD811 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. An important example is when the amplifier is driving a reverse-terminated 75 Ω cable and the cable’s far end is shorted to a power supply. With power supplies of ±12 V (or less) at an ambient temperature of +25°C or less, and the cable shorted to a supply rail, the amplifier is not destroyed, even if this condition persists for an extended period.

METALIZATION PHOTOGRAPH

Contact the factory for the latest dimensions.

V+

7

V

OUT

6

0.0618 (1.57)

2

INPUT

0.098 (2.49)

Figure 7. Metalization Photograph

Dimensions Shown in Inches and (Millimeters)

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

Rev. E | Page 6 of 20

3

+INPUT

AD811

4

V–

00866-E-007

ANALOG DEVICES AD811 Service Manual

FEATURES

APPLICATIONS

GENERAL DESCRIPTION

CONNECTION DIAGRAMS

TABLE OF CONTENTS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

MAXIMUM POWER DISSIPATION

METALIZATION PHOTOGRAPH