80 MHz Bandwidth (3 dB, G = +1)
75 MHz Bandwidth (3 dB, G = +2)
1000 V/ms Slew Rate
50 ns Settling Time to 0.1% (V
Ideal for Video Applications
30 MHz Bandwidth (0.1 dB, G = +2)
0.02% Differential Gain
0.048 Differential Phase
Low Noise
2.9 nV/√
13 pA/√
Hz Input Voltage Noise
Hz Inverting Input Current Noise
Low Power
8.0 mA Supply Current max
2.1 mA Supply Current (Power-Down Mode)
High Performance Disable Function
Turn-Off Time 100 ns
Break Before Make Guaranteed
Input to Output Isolation of 64 dB (OFF State)
Flexible Operation
Specified for 65 V and 615 V Operation
62.9 V Output Swing Into a 150 V Load (V
APPLICATIONS
Professional Video Cameras
Multimedia Systems
NTSC, PAL & SECAM Compatible Systems
Video Line Driver
ADC/DAC Buffer
DC Restoration Circuits
= 10 V Step)
O
= 65 V)
S
Video Op Amp with Disable
AD810
CONNECTION DIAGRAM
8-Pin Plastic Mini-DIP (N), SOIC (R)
and Cerdip (Q) Packages
OFFSET
PRODUCT DESCRIPTION
The AD810 is a composite and HDTV compatible, current
feedback, video operational amplifier, ideal for use in systems
such as multimedia, digital tape recorders and video cameras.
The 0.1 dB flatness specification at bandwidth of 30 MHz
(G = +2) and the differential gain and phase of 0.02% and
0.04° (NTSC) make the AD810 ideal for any broadcast quality
video system. All these specifications are under load conditions
of 150 Ω (one 75 Ω back terminated cable).
The AD810 is ideal for power sensitive applications such as
video cameras, offering a low power supply current of 8.0 mA
max. The disable feature reduces the power supply current to
only 2.1 mA, while the amplifier is not in use, to conserve
power. Furthermore the AD810 is specified over a power supply
range of ±5 V to ±15 V.
The AD810 works well as an ADC or DAC buffer in video
systems due to its unity gain bandwidth of 80 MHz. Because the
AD810 is a transimpedance amplifier, this bandwidth can be
maintained over a wide range of gains while featuring a low
noise of 2.9 nV/√
NULL
–IN
+IN
–V
1
AD810
2
3
4
S
TOP VIEW
8
7
6
5
DISABLE
+V
S
OUTPUT
OFFSET
NULL
Hz for wide dynamic range applications.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
GAIN = +2
R
= 150Ω
PHASE
1
0
–1
–2
–3
–4
CLOSED-LOOP GAIN – dB
–5
11000
Closed-Loop Gain and Phase vs. Frequency, G = +2,
= 150, RF = 715
R
L
GAIN
VS = ±15V
±2.5V
10100
FREQUENCY – MHz
Ω
±5V
L
VS = ±15V
±5V
±2.5V
0
–45
–90
–135
–180
–225
PHASE SHIFT – Degrees
–270
Differential Gain and Phase vs. Supply Voltage
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700Fax: 617/326-8703
AD810–SPECIFICA TIONS
(@ TA = +258C and VS = 615 V dc, RL = 150 V unless otherwise noted)
1
ParameterConditionsV
AD810AAD810S
S
MinTypMaxMinTypMaxUnits
DYNAMIC PERFORMANCE
3 dB Bandwidth(G = +2) R
(G = +2) R
(G = +1) R
(G = +10) R
0.1 dB Bandwidth(G = +2) R
(G = +2) R
Full Power BandwidthV
Slew Rate
2
= 20 V p-p,
O
= 400 Ω±15 V1616MHz
R
L
RL = 150 Ω±5 V350350V/µs
= 400 Ω±15 V10001000V/µs
R
L
= 715±5 V40504050MHz
FB
= 715±15 V55755575MHz
FB
= 1000±15 V40804080MHz
FB
= 270±15 V50655065MHz
FB
= 715±5 V13221322MHz
FB
= 715±15 V15301530MHz
FB
Settling Time to 0.1%10 V Step, G = –1±15 V5050ns
Settling Time to 0.01%10 V Step, G = –1±15 V125125ns
Differential Gainf = 3.58 MHz±15 V0.020.050.020.05%
Lead Temperature Range (Soldering 60 sec) . . . . . . . +300°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum raring conditions for extended periods may affect device reliability.
ESD (electrostatic discharge) sensitive device. Electrostatic
charges as high as 4000 volts, which readily accumulate on the
human body and on test equipment, can discharge without
detection. Although the AD810 features ESD protection
circuitry, permanent damage may still occur on these devices if
they are subjected to high energy electrostatic discharges.
Therefore, proper ESD precautions are recommended to avoid
any performance degradation or loss of functionality.
ORDERING GUIDE
TemperaturePackagePackage
ModelRangeDescriptionOption
AD810AN–40°C to +85°C8-Pin Plastic DIPN-8
AD810AR–40°C to +85°C8-Pin Plastic SOIC R-8
AD810AR-REEL–40°C to +85°C8-Pin Plastic SOIC R-8
1
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD810 is limited by the associated rise in junction temperature.
For the plastic packages, the maximum safe junction temperature is 145°C. For the cerdip package, the maximum junction
S
temperature is 175°C. If these maximums are exceeded momentarily, proper circuit operation will be restored as soon as the die
temperature is reduced. Leaving the device in the “overheated”
condition for an extended period can result in device burnout.
To ensure proper operation, it is important to observe the
derating curves.
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
TOTAL POWER
0.8
DISSIPATION – Watts
0.6
0.4
–40
–60
8-PIN
MINI-DIP
8-PIN
SOIC
–20
AMBIENT TEMPERATURE –
8-PIN
CERDIP
°C
8-PIN
MINI-DIP
120100806040200
140
Maximum Power Dissipation vs. Temperature
While the AD810 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction
temperature is not exceeded under all conditions.
0.1µF
+V
7
2
AD810
3
S
SEE TEXT
10kΩ
1
5
6
0.1µF
4
–V
S
Offset Null Configuration
5962-9313201MPA –55°C to +125°C 8-Pin CerdipQ-8
REV. A
–3–
AD810
10
4
140
7
5
–40
6
–60
9
8
120806040100200–20
SUPPLY CURRENT – mA
JUNCTION TEMPERATURE – °C
VS = ±15V
VS = ±5V
–Typical Characteristics
20
15
NO LOAD
10
RL = 150Ω
5
MAGNITUDE OF THE OUTPUT VOLTAGE – ±Volts
0
020
51510
SUPPLY VOLTAGE – ±Volts
Figure 1. Input Common-Mode Voltage Range vs.
20
15
10
5
MAGNITUDE OF THE OUTPUT VOLTAGE – ±Volts
0
020
Figure 2. Output Voltage Swing vs. Supply
Supply Voltage
35
30
25
20
15
±15V SUPPLY
NO LOAD
RL = 150Ω
51510
SUPPLY VOLTAGE – ±Volts
10
OUTPUT VOLTAGE – Volts p-p
5
0
1010010k1k
LOAD RESISTANCE – Ohms
Figure 3. Output Voltage Swing vs. Load Resistance
10
8
6
4
2
0
–2
–4
INPUT BIAS CURRENT – µA
–6
–8
–10
Figure 5. Input Bias Current vs. Temperature
NONINVERTING INPUT
= ±5V, ±15V
V
S
INVERTING INPUT
V
= ±5V, ±15V
S
–20
0
JUNCTION TEMPERATURE – °C
±5V SUPPLY
Figure 4. Supply Current vs. Junction Temperature
10
8
6
4
2
0
–2
–4
INPUT OFFSET VOLTAGE – mV
–6
–8
–10
140–40–6012010080604020
–40–60
VS = ±5V
VS = ±15V
JUNCTION TEMPERATURE – °C
140
120100806040200–20
Figure 6. Input Offset Voltage vs. Junction Temperature
–4–
REV. A
Typical Characteristics–
100k
10k
1k
100
100k1M10M100M
OUTPUT RESISTANCE – Ω
FREQUENCY – Hz
1M
100
10
1
100
10
1
101001k10k100k
INVERTING INPUT
CURRENT NOISE
VOLTAGE NOISE
FREQUENCY – Hz
V
S
= ±5V TO ±15V
NONINVERTING INPUT
CURRENT NOISE
CURRENT NOISE – pA/ Hz
VOLTAGE NOISE – nV/ Hz
AD810
250
200
VS = ±15V
150
100
SHORT CIRCUIT CURRENT – mA
VS = ±5V
50
–60+140
–40
JUNCTION TEMPERATURE – °C
+100 +120+80+60+40+200–20
Figure 7. Short Circuit Current vs. Temperature
10.0
VS = ±5V
VS = ±15V
1.0
0.1
GAIN = 2
= 715Ω
R
F
120
100
80
60
OUTPUT CURRENT – mA
40
20
–40
–60
JUNCTION TEMPERATURE – °C
VS = 5V
VS = 15V
±
±
+140
+120+100+80+60+40+200–20
Figure 8. Linear Output Current vs. Temperature
CLOSED-LOOP OUTPUT RESISTANCE – Ω
0.01
10k
100k100M10M1M
FREQUENCY – Hz
Figure 9. Closed-Loop Output Resistance vs. Frequency
30
VS = ±15V
25
±
OUTPUT LEVEL FOR 3% THD
20
15
10
OUTPUT VOLTAGE – Volts p-p
5
0
Figure 11. Large Signal Frequency Response
= 400Ω
R
L
VS = ±5V
100k1M100M10M
FREQUENCY – Hz
Figure 10. Output Resistance vs. Frequency,
Disabled State
Figure 12. Input Voltage and Current Noise vs. Frequency
REV. A
–5–
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