Analog Devices AD8048, AD8047 Datasheet
250 MHz, General Purpose
5ns
1V
1
2
3
4
8
7
6
5
AD8047/48
NC
–INPUT
+INPUT
–V
S
NC
+V
S
OUTPUT
NC
(Top View)
NC = NO CONNECT
a
FEATURES
Wide Bandwidth AD8047, G = +1 AD8048, G = +2
Small Signal 250 MHz 260 MHz
Large Signal (2 V p-p) 130 MHz 160 MHz
5.8 mA Typical Supply Current
Low Distortion, (SFDR) Low Noise
–66 dBc typ @ 5 MHz
–54 dBc typ @ 20 MHz
5.2 nV/√
Drives 50 pF Capacitive Load
High Speed
Slew Rate 750 V/µs (AD8047), 1000 V/µs (AD8048)
Settling 30 ns to 0.01%, 2 V Step
±3 V to ±6 V Supply Operation
APPLICATIONS
Low Power ADC Input Driver
Differential Amplifiers
IF/RF Amplifiers
Pulse Amplifiers
Professional Video
DAC Current to Voltage Conversion
Baseband and Video Communications
Pin Diode Receivers
Active Filters/Integrators
PRODUCT DESCRIPTION
The AD8047 and AD8048 are very high speed and wide bandwidth amplifiers. The AD8047 is unity gain stable. The
AD8048 is stable at gains of two or greater. The AD8047 and
AD8048, which utilize a voltage feedback architecture, meet the
requirements of many applications that previously depended on
current feedback amplifiers.
A proprietary circuit has produced an amplifier that combines
many of the best characteristics of both current feedback and
voltage feedback amplifiers. For the power (6.6 mA max) the
AD8047 and AD8048 exhibit fast and accurate pulse response
(30 ns to 0.01%) as well as extremely wide small signal and
large signal bandwidth and low distortion. The AD8047
achieves –54 dBc distortion at 20 MHz and 250 MHz small signal and 130 MHz large signal bandwidths.
Hz (AD8047), 3.8 nV/√Hz (AD8048) Noise
Voltage Feedback Op Amps
AD8047/AD8048
FUNCTIONAL BLOCK DIAGRAM
8-Pin Plastic Mini-DIP (N), Cerdip (Q)
and SO (R) Packages
The AD8047 and AD8048’s low distortion and cap load drive
make the AD8047/AD8048 ideal for buffering high speed
ADCs. They are suitable for 12 bit/10 MSPS or 8 bit/60 MSPS
ADCs. Additionally, the balanced high impedance inputs of the
voltage feedback architecture allow maximum flexibility when
designing active filters.
The AD8047 and AD8048 are offered in industrial (–40°C to
+85°C) temperature ranges and are available in 8-pin plastic
DIP and SOIC packages.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
Figure 1. AD8047 Large Signal Transient Response,
V
= 4 V p-p, G = +1
O
© Analog Devices, Inc., 1995
One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: 617/329-4700 Fax: 617/326-8703
AD8047/AD8048–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(±VS = ±5 V; R
= 100 Ω; AV = 1 (AD8047); AV = 2 (AD8048), unless otherwise noted)
LOAD
AD8047A AD8048A
Parameter Conditions Min Typ Max Min Typ Max Units
DYNAMIC PERFORMANCE
Bandwidth (–3 dB)
Small Signal V
Large Signal
1
Bandwidth for 0.1 dB Flatness V
Slew Rate, Average +/– V
Rise/Fall Time V
≤ 0.4 V p-p 170 250 180 260 MHz
OUT
V
= 2 V p-p 100 130 135 160 MHz
OUT
= 300 mV p-p
OUT
8047, R
OUT
OUT
V
OUT
=0 Ω; 8048, RF = 200 Ω 35 50 MHz
F
= 4 V Step 475 750 740 1000 V/µs
= 0.5 V Step 1.1 1.2 ns
= 4 V Step 4.3 3.2 ns
Settling Time
To 0.1% V
To 0.01% V
= 2 V Step 13 13 ns
OUT
= 2 V Step 30 30 ns
OUT
HARMONIC/NOISE PERFORMANCE
2nd Harmonic Distortion 2 V p-p; 20 MHz –54 –48 dBc
= 1 kΩ –64 –60 dBc
R
L
3rd Harmonic Distortion 2 V p-p; 20 MHz –60 –56 dBc
R
= 1 kΩ –61 –65 dBc
L
Input Voltage Noise f = 100 kHz 5.2 3.8 nV/√
Input Current Noise f = 100 kHz 1.0 1.0 pA/√
Average Equivalent Integrated
Input Noise Voltage 0.1 MHz to 10 MHz 16 11 µV rms
Differential Gain Error (3.58 MHz) R
Differential Phase Error (3.58 MHz) R
DC PERFORMANCE
Input Offset Voltage
2,
3
R
= 150 Ω
L
= 150 Ω, G = +2 0.02 0.01 %
L
= 150 Ω, G = +2 0.03 0.02 Degree
L
13 13 mV
T
MIN–TMAX
44mV
Offset Voltage Drift ±5 ±5 µV/°C
Input Bias Current 1 3.5 1 3.5 µA
T
MIN–TMAX
6.5 6.5 µA
Input Offset Current 0.5 2 0.5 2 µA
Common-Mode Rejection Ratio V
Open-Loop Gain V
T
MIN–TMAX
= ±2.5 V 74 80 74 80 dB
CM
= ±2.5 V 58 62 65 68 dB
OUT
T
MIN–TMAX
54 56 dB
33µA
INPUT CHARACTERISTICS
Input Resistance 500 500 kΩ
Input Capacitance 1.5 1.5 pF
Input Common-Mode Voltage Range ±3.4 ±3.4 V
OUTPUT CHARACTERISTICS
Output Voltage Range, R
= 150 Ω±2.8 ±3.0 ±2.8 ±3.0 V
L
Output Current 50 50 mA
Output Resistance 0.2 0.2 Ω
Short Circuit Current 130 130 mA
POWER SUPPLY
Operating Range ±3.0 ± 5.0 ± 6.0 ±3.0 ± 5.0 ± 6.0 V
Quiescent Current 5.8 6.6 5.9 6.6 mA
T
MIN–TMAX
7.5 7.5 mA
Power Supply Rejection Ratio 72 78 72 78 dB
NOTES
1
See Max Ratings and Theory of Operation sections of data sheet.
2
Measured at AV = 50.
3
Measured with respect to the inverting input.
Specifications subject to change without notice.
Hz
Hz
–2–
REV. 0
AD8047/AD8048
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing × Bandwidth Product (AD8047) . . . 180 V – MHz
(AD8048) . . . 250 V – MHz
Internal Power Dissipation
2
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . .–65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Pin Plastic DIP Package: θJA = 90°C/Watt
8-Pin SOIC Package: θJA = 140°C/Watt
METALIZATION PHOTOS
Dimensions shown in inches and (mm).
Connect Substrate to –VS.
AD8047
+V
S
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these devices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can
result in device failure.
While the AD8047 and AD8048 are internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (+150°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
8-PIN MINI-DIP PACKAGE
1.5
1.0
0.5
MAXIMUM POWER DISSIPATION – Watts
0
–50 80
–40
8-PIN SOIC PACKAGE
0 10 –10 –20 –30 20 30 40 50 60 70
AMBIENT TEMPERATURE –
TJ = +150°C
°
C
90
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–IN
0.045
(1.14)
V
OUT
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
+IN
0.044
(1.13)
–V
S
Model Range Description Option*
Temperature Package Package
AD8047AN –40°C to +85°C Plastic DIP N-8
AD8048
+V
S
AD8047AR –40°C to +85°C SOIC R-8
AD8047-EB Evaluation
Board
AD8048AN –40°C to +85°C Plastic DIP N-8
AD8048AR –40°C to +85°C SOIC R-8
0.045
(1.14)
–OUT
–IN
0.044
(1.13)
–V
S
+IN
AD8048-EB Evaluation
Board
*N = Plastic DIP; R= SOIC (Small Outline Integrated Circuit)
REV. 0
–3–
AD8047/AD8048
100Ω
+V
S
–V
S
0.1µF
10µF
AD8047
3
2
7
6
0.1µF
10µF
4
R
IN
R
F
RL = 100Ω
V
OUT
TR/TF = 500ps
PULSE
GENERATOR
V
IN
RT = 66.5Ω
5ns
100mV
AD8047–Typical Characteristics
10µF
S
0.1µF
7
6
0.1µF
4
10µF
S
V
RL = 100Ω
OUT
PULSE
GENERATOR
TR/TF = 500ps
V
IN
RT = 49.9Ω
+V
2
AD8047
3
–V
Figure 3. Noninverting Configuration, G = +1
1V
5ns
Figure 6. Inverting Configuration, G = –1
1V
5ns
Figure 4. Large Signal Transient Response;
V
= 4 V p-p, G = +1
O
100mV
5ns
Figure 5. Small Signal Transient Response;
V
= 400 mV p-p, G = +1
O
Figure 7. Large Signal Transient Response;
V
= 4 V p-p, G = –1, RF = RIN = 200
O
Ω
Figure 8. Small Signal Transient Response;
V
= 400 mV p-p, G = –1, RF = R
O
= 200
IN
–4–
Ω
REV. 0
AD8048–Typical Characteristics
5ns
1V
5ns
100mV
R
F
PULSE
GENERATOR
TR/TF = 500ps
R
V
IN
RT = 49.9Ω
+V
IN
7
2
AD8048
3
4
–V
10µF
S
0.1µF
6
0.1µF
10µF
S
V
OUT
RL = 100Ω
PULSE
GENERATOR
TR/TF = 500ps
V
IN
RS = 100Ω
R
IN
RT = 66.5Ω
2
3
AD8047/AD8048
R
F
+V
AD8048
–V
10µF
S
0.1µF
7
6
0.1µF
4
10µF
S
V
OUT
RL = 100Ω
Figure 9. Noninverting Configuration, G = +2
5ns1V
Figure 10. Large Signal Transient Response;
V
= 4 V p-p, G = +2, RF = RIN = 200
O
Ω
Figure 12. Inverting Configuration, G= –1
Figure 13. Large Signal Transient Response;
V
= 4 V p-p, G = –1, RF = RIN = 200
O
Ω
100mV
Figure 11. Small Signal Transient Response;
= 400 mV p-p, G = +2, RF = RIN = 200
V
O
REV. 0
5ns
Figure 14. Small Signal Transient Response;
Ω
= 400 mV p-p, G = –1, RF = R
V
O
= 200
IN
Ω
–5–
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