ANALOG DEVICES AD8028-KGD-CHIPS Service Manual
Rail-to-Rail Input/Output Amplifier
AD8028-KGD-CHIPS
Rev. 0
rights of third parties that may result from its use. Specifications subject to change without notice. No
Trademarks and registered trademarks are the prop erty of their respective owner s.
Fax: 781.461.3113 ©2012 Analog Devices, Inc. All rights reserved.
Known Good Die
FEATURES
High speed
190 MHz, –3 dB bandwidth (G = +1)
100 V/µs slew rate
Low distortion
120 dBc @ 1 MHz SFDR
80 dBc @ 5 MHz SFDR
Selectable input crossover threshold
Low noise
4.3 nV/√Hz
1.6 pA/√Hz
Low offset voltage: 900 µV max
Low power: 6.5 mA/amplifier supply current
Disable mode
Wide supply range: 2.7 V to 12 V
Known good die (KGD): these die are fully guaranteed to
data sheet specifications
APPLICATIONS
Filters
ADC drivers
Level shifting
Buffering
Professional video
Low voltage instrumentation
GENERAL DESCRIPTION
The AD8028-KGD-CHIPS1 is a high speed amplifier with railto-rail input and output that operates on low supply voltages and
is optimized for high performance and wide dynamic signal
range. The AD8028-KGD-CHIPS has low noise (4.3 nV/√Hz,
1.6 pA/√Hz) and low distortion (120 dBc at 1 MHz). In
applications that use a fraction of or the entire input dynamic
range and require low distortion, the AD8028-KGD-CHIPS is
an ideal choice.
Low Distortion, High Speed
Many rail-to-rail input amplifiers have an input stage that switches
from one differential pair to another as the input signal crosses a
threshold voltage, which causes distortion. The AD8028-KGD-
CHIPS has a unique feature that allows the user to select the
input crossover threshold voltage through the SELECT pin.
This feature controls the voltage at which the complementary
transistor input pairs switch. The AD8028-KGD-CHIPS also has
intrinsically low crossover distortion. With its wide supply
voltage range (2.7 V to 12 V) and wide bandwidth (190 MHz),
the AD8028-KGD-CHIPS amplifier is designed to work in a
variety of applications where speed and performance are needed on
low supply voltages. The AD8028-KGD-CHIPS has a disable
mode that is controlled via the SELECT pin.
The AD8028-KGD-CHIPS is rated to work over the industrial
temperature range of –40°C to +125°C.
Additional application and technical information can be found
in the AD8028 data sheet.
1
Protected by U.S. patent numbers 6,486,737B1; 6,518,842B1
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
AD8028-KGD-CHIPS Known Good Die
TABLE OF CONTENTS
Features ...................................................................................... 1
Applications ............................................................................... 1
General Description ................................................................. 1
Revision History ....................................................................... 2
Specifications ............................................................................. 3
Absolute Maximum Ratings .................................................... 6
REVISION HISTORY
7/12—Revision 0: Initial Version
ESD Caution .......................................................................... 6
Pad Configuration and Function Descriptions .................... 7
Outline Dimensions ................................................................. 8
Die Specifications and Assembly Recommendations ..... 8
Ordering Guide ..................................................................... 8
Rev. 0 | Page 2 of 8
Known Good Die AD8028-KGD-CHIPS
SPECIFICATIONS
VS = ±5 V at TA = 25°C, RL = 1 kΩ to midsupply, G = 1, unless otherwise noted.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = 1, V
G = 1, V
Bandwidth for 0.1 dB Flatness G = 2, V
Slew Rate G = +1, V
Settling Time to 0.1% G = 2, V
NOISE/DISTORTION PERFORMANCE
Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, V
fC = 5 MHz, V
Input Voltage Noise f = 100 kHz 4.3 GNT nV/√Hz
Input Current Noise f = 100 kHz 1.6 GNT pA/√Hz
Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.1 GNT %
Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.2 GNT Degrees
Crosstalk, Output to Output G = 1, RL = 100 Ω, V
DC PERFORMANCE
Input Offset Voltage SELECT = three-state or open, PNP active 200 GNT µV
SELECT = high NPN active 240 GNT µV
Input Offset Voltage Drift T
MIN
Input Bias Current VCM = 0 V, NPN active 4 6 Tested µA
T
MIN
VCM = 0 V, PNP active −8 −11 Tested µA
TMIN to T
Input Offset Current ±0.1 ±0.9 Tested µA
Open-Loop Gain V
OUT
INPUT CHARACTERISTICS
Input Impedance 6 GNT MΩ
Input Capacitance 2 GNT pF
Input Common-Mode Voltage Range −5.2 to 5.2 GNT V
Common-Mode Rejection Ratio VCM = ±2.5 V 110 GNT dB
SELECT PIN
Crossover Low, Selection Input Voltage Three-state < ±20 µA −3.3 to +5 GNT V
Crossover High, Selection Input Voltage −3.9 to −3.3 GNT V
Disable Input Voltage −5 to −3.9 GNT V
Disable Switching Speed 50% of input to <10% of final V
Enable Switching Speed 45 GNT ns
OUTPUT CHARACTERISTICS
Output Overdrive Recovery Time
VIN = +6 V to −6 V, G = −1 40/45 GNT ns
(Rising/Falling Edge)
Output Voltage Swing −VS + 0.20 +VS − 0.06,
Short-Circuit Output Sinking and Sourcing 120 GNT mA
Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = low −49 GNT dB
Capacitive Load Drive 30% overshoot 20 GNT pF
POWER SUPPLY
Operating Range 2.7 12 GNT V
Quiescent Current/Amplifier 6.5 8.5 Tested mA
Quiescent Current (Disabled) SELECT = low
+VS 0.8 3 Tested mA
−VS −0.9 −0.6 Tested mA
Power Supply Rejection Ratio VS ± 1 V 110 GNT dB
1
GNT is guaranteed not tested.
= 0.2 V p-p 138 190 GNT MHz
OUT
= 2 V p-p 20 32 GNT MHz
OUT
= 0.2 V p-p 16 GNT MHz
OUT
= 2 V step/G = −1, V
OUT
= 2 V step 35 GNT ns
OUT
= 2 V p-p, RF = 24.9 Ω 120 GNT dBc
OUT
= 2 V p-p, RF = 24.9 Ω 80 GNT dBc
OUT
= 2 V p-p, VS = ±5 V @ 1 MHz −93 GNT dB
OUT
to T
1.50 GNT µV/°C
MAX
to T
4 GNT µA
MAX
−8 GNT µA
MAX
= 2 V step 90/100 GNT V/µs
OUT
= ±2.5 V 110 GNT dB
980 GNT ns
OUT
+V
Tested V
−V
+ 0.06
s
S
Rev. 0 | Page 3 of 8
Loading...