Quad High Speed
R
F
R
G
R
G
R
F
V
EE
V
CC
AD8026
R
F
R
P
R
P
OUT A
–IN A
+IN A
+IN B
–IN B
OUT B
OUT D
–IN D
+IN D
+IN C
–IN C
OUT C
R
F
R
G
R
P
R
P
R
G
a
FEATURES
Voltage Feedback, Rail-to-Rail Output
Rated Settling Time to Within 0.5 V of Supply Rail
Quad High Speed Amplifier
Settling Time to 0.1% of 55 ns (4 V Swing, C
Slew Rate 135 V/ms (4 V Swing)
–3 dB Bandwidth 60 MHz
Fixed Gain Resistors for High DC Accuracy
Low Voltage Offset 0.5 mV RTO Typical
Gain Error Less than 0.05%
Low Supply Current 3.4 mA
Nominal +12 V Supply
14-Lead SOIC Package
APPLICATIONS
LCD Source Drivers
CD DVD
CDR
PRODUCT DESCRIPTION
The AD8026 is a complete low cost, closed loop, voltage feedback, quad amplifier. Precision trimmed resistors set a fixed R
ratio of 5/3 to a typical gain accuracy of 0.02%. Manufac-
R
G
tured on ADI’s proprietary XFCB high speed bipolar process,
which enables the output drivers to settle to within 0.1% within
55 ns into a 100 pF load (4 V swing) and drive output voltages
to rated settling time to within 0.5 V from the rail. The typical
3 dB bandwidth is 60 MHz, at G = +2.67. The AD8026 is
laser trimmed to produce both exceptional offset and gain
performance.
The low settling time, high slew rate, low offset and rail-to-rail
output voltage drive capability makes the AD8026 ideal for
driving LCD displays.
The AD8026 is available in a 14-lead SOIC package.
= 100 pF)
L
/
F
FUNCTIONAL BLOCK DIAGRAM
RL = 10kV
50ns/DIV
1V/DIV
1V/DIV
INPUT
OUTPUT
VIN = 1.5V
V
= 4V
OUT
Figure 1. 4 V Step Response
Amplifier
AD8026
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
(@ +258C, VS = 66 V, RI = 500 V, RL = 10 kV, RF = 5K, RG = 3K Noninverting
AD8026–SPECIFICATIONS
Configuration, T
= 08C, T
MIN
= +708C, unless otherwise noted.)
MAX
Parameter Conditions Min Typ Max Units
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth V
Bandwidth for 0.1 dB Flatness V
Slew Rate V
Full Power Response V
Settling Time to 0.1% V
= 50 mV rms
IN
= 1 kΩ 20 60 MHz
R
L
= 50 mV rms
IN
= 1 kΩ 12 MHz
R
L
= 4 V Step 135 V/µs
O
= 2 V p-p 10 MHz
O
= 4 V Step, CL = 100 pF,
O
R
= 50 Ω 55 ns
S
NOISE/DISTORTION PERFORMANCE
Total Harmonic Distortion f
Voltage Noise (RTO)
1
Crosstalk, Output to Output f = 5 MHz, V
Differential Gain Error NTSC R
Differential Phase Error NTSC R
DC PERFORMANCE
RTO Offset Voltage
2
= 5 MHz, VO = 2 V p-p,
C
= 1 kΩ –60 dBc
R
L
f = 10 kHz 67 nV/√Hz
= 2 V p-p,
= 1 kΩ –80 dB
R
L
O
= 1 kΩ 0.02 %
L
= 1 kΩ 0.02 Degrees
L
VIN = 0 V 0.5 5.5 mV
to T
T
MIN
MAX
6mV
RTO Offset Drift 10 µV/°C
+Input Bias Current 0.6 1.6 µA
Closed-Loop Gain Error
Gain Matching Channel-to-Channel, R
3
R
= 10 kΩ, –2.67 < V
L
to T
T
MIN
MAX
< +2.67 –0.02 0.05 %
O
0.05 %
= 10 kΩ 0.03 %
L
INPUT CHARACTERISTICS
+Input Resistance 170 kΩ
+Input Capacitance 2.5 pF
OUTPUT CHARACTERISTICS
Output Voltage Swing R
= 10 kΩ, V
L
– VOH, VEE + V
CC
OL
0.2 0.25 V
Short Circuit Output Current 175 mA
POWER SUPPLY
Operating Range
4
13 V
Quiescent Current/Amp 3.2 3.4 mA/Amp
Power Supply Rejection Ratio (RTO) +V
= 5.5 V to 6.5 V, –VS = –6 V 48 60 dB
S
–VS = –5.5 V to –6.5 V, +VS = 6 V 48 65 dB
OPERATING TEMPERATURE RANGE 0 +70 °C
NOTES
1
Includes gain resistor thermal noise.
2
RTO offset includes effects of input voltage offset, input current, and input offset current.
3
Measured in the inverting mode.
4
Observe Absolute Maximum Ratings.
Specifications subject to change without notice.
–2– REV. 0
AD8026
AMBIENT TEMPERATURE – 8C
1.5
1.0
0.5
–10 800
MAXIMUM POWER DISSIPATION – Watts
10 20 30 40 50 60 70
TJ = +1508C
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
Supply␣ Voltage VCC–VEE . . . . . . . . . . . . . . . . . . . . . . . 14.0␣ V
Internal␣ Power␣ Dissipation
␣␣
Small␣ Outline␣ Package (R) . . . . . . . . . . . . . . . . . . . . 0.9␣ W
+Input Voltage V
CC–VIN
2
+ . . . . . . . . . . . . . . . . . . . . . . < 12 V
–Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . < V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > V
1
+ 12 V
EE
– 12 V
EE
Output Short Circuit Duration
␣ ␣ . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . . 0°C to +70°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
14-Lead SOIC Package: θJA = 120°C/W, where P
= (TJ – T
D
)/θ
.
A
JA
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
AD8026AR 0°C to +70°C 14-Lead Plastic SOIC SO-14
AD8026AR-REEL 0°C to +70°C REEL SOIC SO-14
AD8026AR-REEL7 0°C to +70°C REEL 7 SOIC SO-14
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8026 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-
perature of the plastic, approximately +150°C. Exceeding this
limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of +175°C for an extended
period can result in device failure.
While the AD8026 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.
PIN CONFIGURATION
OUT A
–IN A
+IN A
V
+IN B
–IN B
OUT B
CC
1
2
3
AD8026
4
TOP VIEW
(Not to Scale)
5
6
7
14
13
12
11
10
9
8
OUT D
–IN D
+IN D
V
EE
+IN C
–IN C
OUT C
Figure 2. Maximum Power Dissipation vs. Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8026 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–3–REV. 0