FEATURES
Low Power Amplifiers Provide Low Noise and Low
Distortion, Ideal for xDSL Modem Receiver
Wide Supply Range: +5 V, 2.5 V to 12 V Voltage Supply
Low Power Consumption
4.0 mA/Amp
Voltage Feedback
Ease of Use
Lower Total Noise (Insignificant Input Current Noise
Contribution Compared to Current Feedback Amps)
Low Noise and Distortion
2.5 nV/√HzVoltage Noise @ 100 kHz
1.2 pA/√Hz Current Noise
MTPR < –66 dBc (G = +7)
SFDR 110 dB @ 200 kHz
High Speed
130 MHz Bandwidth (–3 dB), G = +1
Settling Time to 0.1%, 68 ns
50 V/s Slew Rate
High Output Swing
10.1 V on 12 V Supply
Low Offset Voltage, 1.5 mV Typical
Low Noise Op Amps
AD8022
FUNCTIONAL BLOCK DIAGRAM
SOIC, MSOP
APPLICATIONS
Receiver for ADSL, VDSL, HDSL, and Proprietary xDSL
Systems
Low Noise Instrumentation Front End
Ultrasound Preamp
Active Filters
16-Bit ADC Buffer
PRODUCT DESCRIPTION
The AD8022 consists of two low noise, high speed, voltage
feedback amplifiers. Each amplifier consumes only 4.0 mA of
quiescent current yet has only 2.5 nV/√Hz of voltage noise. These
dual amplifiers provide wideband, low distortion performance,
with high output current optimized for stability when driving capacitive loads. Manufactured on ADI’s high voltage generation
of XFCB bipolar process, the AD8022 operates on a wide range
of supply voltages. The AD8022 is available in both an 8-lead MSOP
and an 8-lead SOIC package. Fast overvoltage recovery and
wide bandwidth make the AD8022 ideal as the receive channel
front end to an ADSL, VDSL or proprietary xDSL transceiver design.
In an xDSL line interface circuit, the AD8022’s op amps can be
configured as the differential receiver from the line transformer or
as independent active filters.
Figure 1. Current and Voltage Noise vs. Frequency
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
Storage Temperature Range RM, R . . . . . . –65∞C to +125∞C
Operating Temperature Range (A Grade) . . . –40∞C to +85∞C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300∞C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
AD8022AR–40∞C to +85∞C8-Lead Plastic SOICSO-8
AD8022ARM–40∞C to +85∞C8-Lead MSOPRM-8
AD8022AR-EVALEvaluation BoardSO-8
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8022
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150∞C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change
in the stresses exerted on the die by the package. Exceeding a
junction temperature of 175∞C for an extended period can result
in device failure.
While the AD8022 is internally short circuit protected, this may not
be sufficient to guarantee that the maximum junction temperature
(150∞C) is not exceeded under all conditions. To ensure proper
operation, it is necessary to observe the maximum power derating curves.
2.0
1.5
8-LEAD SOIC PACKAGE
1.0
0.5
MAXIMUM POWER DISSIPATION – W
0
–50
8-LEAD MSOP
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE – C
TJ = 150 C
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8022 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
–4–
REV. A
Typical Performance Characteristics–
AD8022
5
4
3
2
1
0
dB
–1
–2
–3
–4
–5
0.1101005001
V
50
R
F
V
OUT
IN
+
50
50
RF = 402
FREQUENCY – MHz
RF = 715
RF = 0
TPC 1. Frequency Response vs. RF, G = +1,
= ±12 V, VIN= 63 mV p-p
V
S
0.4
G = +2
0.3
R
= 500
L
0.2
0.1
0
–0.1
dB
–0.2
–0.3
–0.4
–0.5
–0.6
100k
1M10M100M
FREQUENCY – Hz
12V
5.0V
2.5V
TPC 2. Fine-Scale Gain Flatness vs. Frequency, G = +2
5
4
3
2
1
0
dB
–1
–2
–3
–4
–5
0.1
V
IN
50
402
V
453
+
VIN = 2V p-p
VIN = 0.8V p-p
110100500
OUT
56.2
VIN = 0.4V p-p
FREQUENCY – MHz
VIN = 0.05V p-p
VIN = 0.2V p-p
TPC 4. Frequency Response vs. Signal Level,
= ±12 V, G = +1
V
S
5
V
4
IN
50
3
2
715
1
0
–1
–2
FREQUENCY RESPONSE – dB
–3
–4
–5
0.1101005001
+
715
FREQUENCY – kHz
R
453
S
C
L
56.2
30pF
0pF
V
OUT
50pF
TPC 5. Frequency Response vs. Capacitive
Load, C
= 0 pF, 30 pF, and 50 pF, RS = 0
L
W
0.4
G = +1
0.3
= 500
R
L
0.2
0.1
0
–0.1
dB
–0.2
–0.3
–0.4
–0.5
–0.6
100k
1M10M100M
FREQUENCY – Hz
12V
5.0V
2.5V
TPC 3. Fine-Scale Gain Flatness vs. Frequency, G = +1