Analog Devices AD8022 Datasheet

Dual High-Speed

FREQUENCY – Hz

3.0

10k

pA AND nV/ Hz

2.5

2.0

1.5

1.0

0.5

0

100k 1M

VOLTAGE NOISE, nV

CURRENT NOISE, pA

a

FEATURES
Low-Noise Amplifiers Provide Low Noise and Low

Distortion, Ideal for xDSL Modem Receiver
+5 V to ⴞ12 V Voltage Supply
Low-Power Consumption

4.0 mA/Amp (Typ) Supply Current
Voltage Feedback Amplifiers
Low Noise and Distortion

2.5 nV/√Hz Voltage Noise @ 100 kHz

SFDR –95 dBc @ 1 MHz
MTPR < –66 dBc

High Speed

120 MHz Bandwidth (–3 dB), G = 1
50 V/␮s Slew Rate

Low-Offset Voltage, 1.5 mV Typical

APPLICATIONS
ADSL, VDSL, HDSL, and Proprietary xDSL Systems
Low-Noise Instrumentation Front End
Ultrasound Preamp

Low-Noise Op Amps

AD8022

FUNCTIONAL BLOCK DIAGRAM

OUT1

–IN1
+IN1

–V

S

1

2

3

4

AD8022

–
+

8

+V

S

7

OUT2

6

–IN2

–
+

5

+IN2

PRODUCT DESCRIPTION

The AD8022 consists of two low-noise, high-speed, voltage feed-

back amplifiers. Both inputs add only 2.5 nV/√Hz of voltage

noise. These dual amplifiers provide wideband, low-distortion
performance, with high-output current optimized for stability

when driving capacitive loads. Operating from +5 V to ±12 V

supplies, the AD8022 typically consumes only 4.0 mA/Amp
quiescent current. The AD8022 is available in both an 8-lead
microSOIC and an 8-lead SOIC package. Fast overvoltage
recovery and wide bandwidth make the AD8022 ideal as the
receive channel front end to an ADSL, VDSL or proprietary
xDSL transceiver design.

Low-noise receive amplifiers in the AD8022 are independent
voltage feedback amplifiers and can be configured as the differ­ential receiver from the line transformer or as independent active
filters in an xDSL line interface circuit.

Figure 1. Current and Voltage Noise vs. Frequency

REV. 0

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
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Fax: [phone] © Analog Devices, Inc., 1999

AD8022–SPECIFICATIONS

(@ 25ⴗC, VS = ⴞ12 V, RL = 500 ⍀, G = 1, T
otherwise noted)

= –40ⴗC, T

MIN

= +85ⴗC, unless

MAX

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth V
Bandwidth for 0.1 dB Flatness V
Large Signal Bandwidth V
Slew Rate V
Rise and Fall Time V
Settling Time 0.1% V
Overdrive Recovery Time V

= 0.2 V p-p 120 MHz

OUT

= 0.2 V p-p 25 MHz

OUT

= 4 V p-p 15 MHz

OUT

= 2 V p-p, G = 2 50 V/µs

OUT

= 2 V p-p, G = 2 30 ns

OUT

= 2 V p-p 62 ns

OUT

= 150% of Max Output

OUT

Voltage, G = 2 200 ns

NOISE/DISTORTION PERFORMANCE

Distortion V

Second Harmonic f
Third Harmonic f

Multitone Input Power Ratio

1

= 2 V p-p

OUT

= 1 MHz –95 dBc

C

= 1 MHz –100 dBc

C

G = 7 Differential

26 kHz to 132 kHz –67.2 dBc
144 kHz to 1.1 MHz –66 dBc

Voltage Noise (RTI) f = 100 kHz 2.5 nV/√Hz
Input Current Noise f = 100 kHz 1.2 pA/√Hz

INPUT CHARACTERISTICS

RTI Offset Voltage –6 –1.5 +6 mV

T

MIN

to T

MAX

–7.25 +7.25 mV

Input Bias Current –5 +2.5 +5 µA

to T

T

MIN

MAX

–7.5 +7.5 µA

Input Resistance (Differential) 20 kΩ

Input Capacitance 0.7 pF
Input Common-Mode Voltage Range –11.25 to +11.75 V

OUTPUT CHARACTERISTICS

Output Voltage Swing Single-Ended –10.1 +10.1 V
Short Circuit Output Current 100 mA
Capacitive Load Drive R

= 0 Ω, <3 dB of Peaking 75 pF

S

POWER SUPPLY

Operating Range +4.5 ±13.0 V

Quiescent Current 4.0 5.5 mA/Amp

T

Power Supply Rejection Ratio V

to T

MIN

S

MAX

= ±5 V to ±12 V 80 dB

6.1 mA

OPERATING TEMPERATURE RANGE –40 +85 °C

NOTES

1

Multitone testing performed with 800 mV rms across a 500 Ω load at Points A and B on Figure 17.

Specifications subject to change without notice.

–2–

REV. 0

SPECIFICATIONS

(@ 25ⴗC, VS = ⴞ2.5 V, RL = 500 ⍀, G = 1, T
otherwise noted)

= –40ⴗC, T

MIN

= +85ⴗC, unless

MAX

AD8022

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth V
Bandwidth for 0.1 dB Flatness V
Large Signal Bandwidth V
Slew Rate V
Rise and Fall Time V
Settling Time 0.1% V
Overdrive Recovery Time V

= 0.2 V p-p 94 MHz

OUT

= 0.2 V p-p 22 MHz

OUT

= 3 V p-p 10 MHz

OUT

= 2 V p-p, G = 2 42 V/µs

OUT

= 2 V p-p, G = 2 40 ns

OUT

= 2 V p-p 75 ns

OUT

= 150% of Max Output

OUT

Voltage, G = 2 225 ns

NOISE/DISTORTION PERFORMANCE

Distortion V

Second Harmonic f
Third Harmonic f

Multitone Input Power Ratio

1

= 2 V p-p

OUT

= 1 MHz –77.5 dBc

C

= 1 MHz –94 dBc

C

G = 7 Differential, V

= ±6 V

S

26 kHz to 132 kHz –69 dBc
144 kHz to 1.1 MHz –66.7 dBc

Voltage Noise (RTI) f = 100 kHz 2.3 nV/√Hz
Input Current Noise f = 100 kHz 1 pA/√Hz

INPUT CHARACTERISTICS

RTI Offset Voltage –5.0 –0.8 +5.0 mV

T

MIN

to T

MAX

–6.25 +6.25 mV

Input Bias Current –5.0 +2.0 +5.0 µA

to T

T

MIN

MAX

7.5 µA

Input Resistance (Differential) 20 kΩ

Input Capacitance 0.7 pF
Input Common-Mode Voltage Range –1.83 to +2.5 V

OUTPUT CHARACTERISTICS

Output Voltage Swing Single-Ended –1.38 +1.48 V
Short Circuit Output Current 80 mA
Capacitive Load Drive R

= 0 Ω, <3 dB of Peaking 75 pF

S

POWER SUPPLY

Operating Range +4.5 ±13.0 V

Quiescent Current 3.5 4.25 mA/Amp

T

MIN

to T

MAX

4.4 mA

Power Supply Rejection Ratio ∆VS = ±1 V 86 dB

OPERATING TEMPERATURE RANGE –40 +85 °C

NOTES

1

Multitone testing performed with 800 mV rms across a 500 Ω load at Points A and B on Figure 17.

Specifications subject to change without notice.

REV. 0

–3–

AD8022

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 V

Internal Power Dissipation

2

1

Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 1.6 W

microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 1.2 W

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±0.8 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range RM, R . . . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for the device in free air:

8-Lead SOIC Package: θJA = 160°C/W.
8-Lead microSOIC Package: θJA = 200°C/W.

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

AD8022AR –40°C to +85°C 8-Lead Plastic SOIC SO-8
AD8022ARM –40°C to +85°C 8-Lead microSOIC RM-8

AD8022AR-EVAL Evaluation Board SO-8

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8022
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the

plastic, approximately 150°C. Temporarily exceeding this limit

may cause a shift in parametric performance due to a change
in the stresses exerted on the die by the package. Exceeding a

junction temperature of 175°C for an extended period can result

in device failure.

While the AD8022 is internally short circuit protected, this may not
be sufficient to guarantee that the maximum junction temperature

(150°C) is not exceeded under all conditions. To ensure proper

operation, it is necessary to observe the maximum power derat­ing curves.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD8022 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.

2.0

1.5

8-LEAD SOIC PACKAGE

1.0

0.5

MAXIMUM POWER DISSIPATION – Watts

0

–50

8-LEAD MICROSOIC

–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90

AMBIENT TEMPERATURE – 8C

TJ = 150 8C

Figure 2. Plot of Maximum Power Dissipation vs.
Temperature

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. 0

AD8022

FREQUENCY – MHz

dB

0.1 10 100 5001

5
4

3

2

1
0

–1

–2
–3
–4

–5

50V

50V

50V

R

F

+

RF = 402V

RF = 0V

RF = 715V

V

IN

V

OUT

FREQUENCY – Hz

0.4

100k

dB

0.3

0.2

0.1
0

–0.1
–0.2
–0.3

–0.4

–0.5
–0.6

1M 10M 100M

G = 2
RL = 509V

612V

65.0V

62.5V

SUPPLY VOLTAGE – Volts

70

2.5

SLEW RATE – V/ms

60

50

40

30

20

10

0

4.5 6.5 8.5 10.5 12.5

NEGATIVE EDGE

POSITIVE EDGE

dB

5

4

3

2

1

0

–1

–2

–3

–4
–5

0.1

V

50V

402V

V

453V

IN

+

VIN = 2V p-p

VIN = 0.8V p-p

1 10 100 500

OUT

56.2V

VIN = 0.4V p-p

FREQUENCY – MHz

VIN = 0.05V p-p

VIN = 0.2V p-p

Figure 3. Frequency Response vs. Signal Level,
V

= ±12 V, G = 1

S

0.4
G = 1

0.3

RL = 509V

0.2

0.1

0

–0.1

dB

–0.2
–0.3

–0.4
–0.5

–0.6

100k

1M 10M 100M

FREQUENCY – Hz

612V

65.0V

62.5V

Figure 4. Fine-Scale Gain Flatness vs. Frequency, G = 1

Figure 6. Frequency Response vs. RF, G = 1, VS = ±12 V,
V

= 22 dBm

IN

Figure 7. Fine-Scale Gain Flatness vs. Frequency, G = 2

140

120

100

80

60

FREQUENCY – MHz

40

Figure 5. Bandwidth vs. Supply, RL = 500 Ω, VIN = –10 dBm

20

0

0142

REV. 0

G = +1, RF = 402V

G = +2, RF = 715V

4681012

SUPPLY VOLTAGE – 6Volts

Figure 8. Slew Rate vs. Supply Voltage, VS = ±12 V, G = 2

–5–