34 mW or 6.7 mA typical for 5 V supply
Output disable feature, 1.3 mA
Low distortion
−93 dBc second harmonic, f
−108 dBc third harmonic, f
DC precision
1 mV maximum input offset voltage
0.5 μV/°C input offset voltage drift
Wide supply range, 5 V to 24 V
Low price
Small packaging
Available in SOIC-8 and MSOP-8
APPLICATIONS
ADC preamps and drivers
Instrumentation preamps
Active filters
Portable instrumentation
Line receivers
Precision instruments
Ultrasound signal processing
High gain circuits
GENERAL DESCRIPTION
The AD8021 is an exceptionally high performance, high speed
voltage feedback amplifier that can be used in 16-bit resolution
systems. It is designed to have both low voltage and low current
noise (2.1 nV/√Hz typical and 2.1 pA/√Hz typical) while operating
at the lowest quiescent supply current (7 mA @ ±5 V) among
today’s high speed, low noise op amps. The AD8021 operates
over a wide range of supply voltages from ±2.25 V to ±12 V, as
well as from single 5 V supplies, making it ideal for high speed,
low power instruments. An output disable pin allows further
reduction of the quiescent supply current to 1.3 mA.
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
= 1 MHz
C
= 1 MHz
C
for 16-Bit Systems
AD8021
CONNECTION DIAGRAM
LOGIC
REFERENCE
–IN
+IN
–V
Figure 1. SOIC-8 (R-8) and MSOP-8 (RM-8)
The AD8021 allows the user to choose the gain bandwidth
p
roduct that best suits the application. With a single capacitor,
the user can compensate the AD8021 for the desired gain with
little trade-off in bandwidth. The AD8021 is a well-behaved
amplifier that settles to 0.01% in 23 ns for a 1 V step. It has a fast
overload recovery of 50 ns.
The AD8021 is stable over temperature with low input offset
v
oltage drift and input bias current drift, 0.5 μV/°C and 10 nA/°C,
respectively. The AD8021 is also capable of driving a 75 Ω line
with ±3 V video signals.
The AD8021 is both technically superior and priced considerably
l
ess than comparable amps drawing much higher quiescent
current. The AD8021 is a high speed, general-purpose amplifier,
ideal for a wide variety of gain configurations and can be used
throughout a signal processing chain and in control loops. The
AD8021 is available in both standard 8-lead SOIC and MSOP
packages in the industrial temperature range of −40°C to +85°C.
VS = ±5 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
Table 1.
Parameter Conditions
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth
Slew Rate, 1 V Step
Settling Time to 0.01%
Overload Recovery (50%)
DISTORTION/NOISE PERFORMANCE
G = +1, C
G = +2, C
G = +5, C
G = +10, C
G = +1, C
G = +2, C
G = +5, C
G = +10, C
V
O
= 10 pF, VO = 0.05 V p-p 355 490
C
= 7 pF, VO = 0.05 V p-p 160 205
C
= 2 pF, VO = 0.05 V p-p 150 185
C
= 0 pF, VO = 0.05 V p-p 110 150
C
= 10 pF 95 120
C
= 7 pF 120 150
C
= 2 pF 250 300
C
= 0 pF 380 420
C
= 1 V step, RL = 500 Ω
±2.5 V input step, G = +2
AD8021AR/AD8021ARM
Min Typ Max Unit
23
50
f = 1 MHz
HD2
HD3
= 2 V p-p
V
O
= 2 V p-p
V
O
−93
−108
f = 5 MHz
HD2
HD3
Input Voltage Noise
Input Current Noise
Differential Gain Error
Differential Phase Error
DC PERFORMANCE
= 2 V p-p
V
O
= 2 V p-p
V
O
f = 50 kHz
f = 50 kHz
NTSC, R
NTSC, R
= 150 Ω
L
= 150 Ω
L
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
to T
MAX
T
MIN
+Input or −input
Input Bias Current Drift
Input Offset Current
Open-Loop Gain
INPUT CHARACTERISTICS
Input Resistance
Common-Mode Input Capacitance
Input Common-Mode Voltage Range
Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
= ±4 V −86 −98
V
CM
Output Voltage Swing
Linear Output Current
Short-Circuit Current
Capacitive Load Drive for 30% Overshoot
DISABLE CHARACTERISTICS
Off Isolation
Turn-On Time
Turn-Off Time
DISABLE Voltage—Off/On
Enabled Leakage Current
= 50 mV p-p/1 V p-p
V
O
f = 10 MHz
= 0 V to 2 V, 50% logic to 50% output
V
O
= 0 V to 2 V, 50% logic to 50% output
V
O
V
DISABLE
− V
LOGIC REFERENCE
LOGIC REFERENCE = 0.4 V
DISABLE
= 4.0 V
−70
−80
2.1 2.6 nV/√Hz
2.1
0.03
0.04
0.4 1.0 mV
0.5
7.5 10.5 μA
10
0.1 0.5 ±μA
82 86
10
1
−4.1 to +4.6
−3.5 to +3.2 −3.8 to +3.4
60
75
15/120
−40
45
50
1.75/1.90
70
2
MHz
MHz
MHz
MHz
V/μs
V/μs
V/μs
V/μs
ns
ns
dBc
dBc
dBc
dBc
pA/√Hz
%
Degrees
μV/°C
nA/°C
dB
MΩ
pF
V
dB
V
mA
mA
pF
dB
ns
ns
V
μA
μA
Rev. F | Page 3 of 28
AD8021
www.BDTIC.com/ADI
Parameter Conditions
Disabled Leakage Current
POWER SUPPLY
Operating Range
Quiescent Current
+Power Supply Rejection Ratio
−Power Supply Rejection Ratio
LOGIC REFERENCE = 0.4 V
DISABLE
Output enabled
Output disabled
V
V
= 0.4 V
= 4 V to 6 V, VEE = −5 V −86 −95
CC
= 5 V, VEE = −6 V to −4 V −86 −95
CC
AD8021AR/AD8021ARM
Min Typ Max Unit
±2.25 ±5 ±12.0 V
30
33
7.0 7.7 mA
1.3 1.6 mA
= ±12 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
V
S
Table 2.
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, CC = 10 pF, VO = 0.05 V p-p 520 560 MHz
G = +2, CC = 7 pF, VO = 0.05 V p-p 175 220 MHz
G = +5, CC = 2 pF, VO = 0.05 V p-p 170 200 MHz
G = +10, CC = 0 pF, VO = 0.05 V p-p 125 165 MHz
Slew Rate, 1 V Step G = +1, CC = 10 pF 105 130 V/μs
G = +2, CC = 7 pF 140 170 V/μs
G = +5, CC = 2 pF 265 340 V/μs
G = +10, CC = 0 pF 400 460 V/μs
Settling Time to 0.01% VO = 1 V step, RL = 500 Ω 21 ns
Overload Recovery (50%) ±6 V input step, G = +2 90 ns
DISTORTION/NOISE PERFORMANCE
f = 1 MHz
HD2 VO = 2 V p-p −95 dBc
HD3 VO = 2 V p-p −116 dBc
f = 5 MHz
HD2 VO = 2 V p-p −71 dBc
HD3 VO = 2 V p-p −83 dBc
Input Voltage Noise f = 50 kHz 2.1 2.6 nV/√Hz
Input Current Noise f = 50 kHz 2.1 pA/√Hz
Differential Gain Error NTSC, RL = 150 Ω 0.03 %
Differential Phase Error NTSC, RL = 150 Ω 0.04 Degrees
DC PERFORMANCE
Input Offset Voltage 0.4 1.0 mV
Input Offset Voltage Drift T
Input Bias Current +Input or −input 8 11.3 μA
Input Bias Current Drift 10 nA/°C
Input Offset Current 0.1 0.5 ±μA
Open-Loop Gain 84 88 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ
Common-Mode Input Capacitance 1 pF
Input Common-Mode Voltage Range −11.1 to +11.6 V
Common-Mode Rejection Ratio VCM = ±10 V −86 −96 dB
to T
MIN
0.2 μV/°C
MAX
μA
μA
dB
dB
Rev. F | Page 4 of 28
AD8021
www.BDTIC.com/ADI
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing −10.2 to +9.8 −10.6 to +10.2 V
Linear Output Current 70 mA
Short-Circuit Current 115 mA
Capacitive Load Drive for 30% Overshoot VO = 50 mV p-p/1 V p-p 15/120 pF
DISABLE CHARACTERISTICS
Off Isolation f = 10 MHz −40 dB
Turn-On Time VO = 0 V to 2 V, 50% logic to 50% output 45 ns
Turn-Off Time VO = 0 V to 2 V, 50% logic to 50% output 50 ns
V
DISABLE Voltage—Off/On
Enabled Leakage Current LOGIC REFERENCE = 0.4 V 70 μA
Disabled Leakage Current LOGIC REFERENCE = 0.4 V 30 μA
POWER SUPPLY
Operating Range ±2.25 ±5 ±12.0 V
Quiescent Current Output enabled 7.8 8.6 mA
Output disabled 1.7 2.0 mA
+Power Supply Rejection Ratio VCC = 11 V to 13 V, VEE = −12 V −86 −96 dB
−Power Supply Rejection Ratio VCC = 12 V, VEE = −13 V to −11 V −86 −100 dB
DISABLE
DISABLE
DISABLE
− V
LOGIC REFERENCE
= 4.0 V
= 0.4 V
1.80/1.95 V
2 μA
33 μA
V
= 5 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
S
Table 3.
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, CC = 10 pF, VO = 0.05 V p-p 270 305 MHz
G = +2, CC = 7 pF, VO = 0.05 V p-p 155 190 MHz
G = +5, CC = 2 pF, VO = 0.05 V p-p 135 165 MHz
G = +10, CC = 0 pF, VO = 0.05 V p-p 95 130 MHz
Slew Rate, 1 V Step G = +1, CC = 10 pF 80 110 V/μs
G = +2, CC = 7 pF 110 140 V/μs
G = +5, CC = 2 pF 210 280 V/μs
G = +10, CC = 0 pF 290 390 V/μs
Settling Time to 0.01% VO = 1 V step, RL = 500 Ω 28 ns
Overload Recovery (50%) 0 V to 2.5 V input step, G = +2 40 ns
DISTORTION/NOISE PERFORMANCE
f = 1 MHz
HD2 VO = 2 V p-p −84 dBc
HD3 VO = 2 V p-p −91 dBc
f = 5 MHz
HD2 VO = 2 V p-p −68 dBc
HD3 VO = 2 V p-p −81 dBc
Input Voltage Noise f = 50 kHz 2.1 2.6 nV/√Hz
Input Current Noise f = 50 kHz 2.1 pA/√Hz
Rev. F | Page 5 of 28
AD8021
www.BDTIC.com/ADI
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DC PERFORMANCE
Input Offset Voltage 0.4 1.0 mV
Input Offset Voltage Drift T
Input Bias Current +Input or −input 7.5 10.3 μA
Input Bias Current Drift 10 nA/°C
Input Offset Current 0.1 0.5 ±μA
Open-Loop Gain 72 76 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ
Common-Mode Input Capacitance 1 pF
Input Common-Mode Voltage Range 0.9 to 4.6 V
Common-Mode Rejection Ratio 1.5 V to 3.5 V −84 −98 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 1.25 to 3.38 1.10 to 3.60 V
Linear Output Current 30 mA
Short-Circuit Current 50 mA
Capacitive Load Drive for 30% Overshoot VO = 50 mV p-p/1 V p-p 10/120 pF
DISABLE CHARACTERISTICS
Off Isolation f = 10 MHz −40 dB
Turn-On Time VO = 0 V to 1 V, 50% logic to 50% output 45 ns
Turn-Off Time VO = 0 V to 1 V, 50% logic to 50% output 50 ns
DISABLE Voltage—Off/On
Enabled Leakage Current LOGIC REFERENCE = 0.4 V 70 μA
Disabled Leakage Current LOGIC REFERENCE = 0.4 V 30 μA
POWER SUPPLY
Operating Range ±2.25 ±5 ±12.0 V
Quiescent Current Output enabled 6.7 7.5 mA
Output disabled 1.2 1.5 mA
+Power Supply Rejection Ratio VCC = 4.5 V to 5.5 V, VEE = 0 V −74 −82 dB
−Power Supply Rejection Ratio VCC = 5 V, VEE = −0.5 V to +0.5 V −76 −84 dB
to T
MIN
V
DISABLE
DISABLE
DISABLE
0.8 μV/°C
MAX
− V
LOGIC REFERENCE
= 4.0 V
= 0.4 V
1.55/1.70 V
2 μA
33 μA
Rev. F | Page 6 of 28
AD8021
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 26.4 V
Power Dissipation
Observed power
ating curves
der
Input Voltage (Common Mode) ±VS ± 1 V
Differential Input Voltage
1
±0.8 V
Differential Input Current ±10 mA
Output Short-Circuit Duration
Observed power
ating curves
der
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering, 10 sec) 300°C
1
The AD8021 inputs are protected by diodes. Current-limiting resistors are
not used to preserve the low noise. If a differential input exceeds ±0.8 V, the
input current should be limited to ±10 mA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8021 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Temporarily
exceeding this limit can cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8021 is internally short-circuit protected, this can
ot be sufficient to guarantee that the maximum junction tem-
n
perature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum
power derating curves.
2.0
1.5
8-LEAD SOIC
1.0
8-LEAD MSOP
0.5
MAXIMUM POW ER DISSIP ATION (W)
0.01
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65
1
Specification is for device in free air: 8-lead SOIC: θJA = 125°C/W; 8-lead
Figure 3. Maximum Power Dissipation vs. Temperature
MSOP: θ
= 145°C/W.
JA
AMBIENT TEM PERATURE (°C)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
01888-004
5
8
75
1
Rev. F | Page 7 of 28
AD8021
www.BDTIC.com/ADI
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
LOGIC
REFERENCE
–IN
+IN
–V
Figure 4. Pin Configuration
AD8021
1
2
3
4
S
8
DISABLE
+V
7
V
6
C
5
S
OUT
COMP
01888-003
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 LOGIC REFERENCE Reference for Pin 81 Voltage Level. Connect to logic low supply.
2 −IN Inverting Input.
3 +IN Noninverting Input.
4 −V
5 C
6 V
S
Compensation Capacitor. Tie to −VS. (See the Applications section for value.)
COMP
Output.
OUT
Negative Supply Voltage.
7 +VS Positive Supply Voltage.
8
1
When Pin 8 (
Pin 1, the part is disabled. (See the Specifications tables for exact disable and enable voltage levels.) If the disable feature is not going to be used, Pin 8 can be tied to
+VS or a logic high source, and Pin 1 can be tied to ground or logic low. Alternatively, if Pin 1 and Pin 8 are not connected, the part is in an enabled state.
DISABLE
DISABLE
) is higher than Pin 1 (LOGIC REFERENCE) by approximately 2 V or more, the part is enabled. When Pin 8 is brought down to within about 1.5 V of
Disable, Active Low.
Rev. F | Page 8 of 28
AD8021
www.BDTIC.com/ADI
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 25°C, VS = ±5 V, RL = 1 kΩ, G = +2, RF = RG = 499 Ω, RS = 49.9 Ω, RO = 976 Ω, RD = 53.6 Ω, CC = 7 pF, CL = 0, CF = 0, V
frequency = 1 MHz, unless otherwise noted.
24
G = +10, R
21
18
G = +5, R
15
12
9
G = +2, R
6
3
CLOSED-LOOP GAIN (dB)
G = +1, R
0
–3
–6
0.1M1G1M10M100M
= 1kΩ, RG = 110Ω, CC = 0pF
F
= 1kΩ, RG = 249Ω, CC = 2pF
F
= RG = 499Ω, CC = 7pF
F
= 75Ω, CC = 10pF
F
FREQUENCY (Hz)
01888-005
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
10M100M
FREQUENCY (Hz)
VS = ±2.5V
VS = ±2.5V
OUT
VS = ±5V
VS = ±12V
= 2 V p-p,
01888-008
1G1M
Figure 5. Small S ignal Freq uency Respons e vs. Frequency and Gain,
V
= 50 mV p-p, Noninverting (See Figure 48)
OUT
24
21
G = –10, RF = 1kΩ, RG = 100Ω,
18
= 100Ω, CC = 0pF
R
IN
15
= 1kΩ, RG = 200Ω,
G = –5, R
12
9
GAIN (dB)
6
3
0
–3
–6
0.1M1G1M10M100M
F
= 66.5Ω, CC = 1.5pF
R
IN
= 499Ω, RG = 249Ω,
G = –2, R
F
= 63.4Ω, CC = 4pF
R
IN
= 499Ω, RG = 499Ω,
G = –1, R
F
= 56.2Ω, CC = 7pF
R
IN
FREQUENCY (Hz)
Figure 6. Small S ignal Freq uency Respons e vs. Frequency and
in, V
Ga
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
0.1M1G1M
= 50 mV p-p Inverting (See Figure 48)
OUT
= 9pF
C
C
C
= 7pF
C
CC = 9pF
10M100M
FREQUENCY (Hz)
C
C
C
C
= 5pF
= 7pF
Figure 7. Small S ignal Freq uency Respons e vs. Frequency and
ensation Capacitor, V
Comp
= 50 mV p-p (See Figu re 48)
OUT
01888-006
01888-007
Figure 8. Small S ignal Freq uency Respons e vs. Frequency and Supply,
= 50 mV p-p, Noninverting (See Figure 48)
V
OUT
3
G = –1
2
1
0
–1
–2
GAIN (dB)
–3
–4
–5
–6
–7
10M100M
FREQUENCY (Hz)
VS = ±2.5V
VS = ±12V
VS = ±2.5V
VS = ±5V
01888-009
1G1M
Figure 9. Small S ignal Freq uency Respons e vs. Frequency and Supply,
V
= 50 mV p-p, Inverting (See Figure 50)
OUT
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
V
= 4V p-p
OUT
V
= 1V p-p
OUT
10M100M
Figure 10. Frequency Response v s. Frequency and V
V
= 0.1V AND 50mV p -p
OUT
FREQUENCY (Hz)
, Noninverting
OUT
01888-010
1G1M
(See Figure 48)
Rev. F | Page 9 of 28
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