ANALOG DEVICES AD8021 Service Manual

Low Noise, High Speed Amplifier
www.BDTIC.com/ADI

FEATURES

Low noise
2.1 nV/√Hz input voltage noise
2.1 pA/√Hz input current noise
Custom compensation
Constant bandwidth from G = −1 to G = −10
High speed
200 MHz (G = −1) 190 MHz (G = −10)
Low power
34 mW or 6.7 mA typical for 5 V supply Output disable feature, 1.3 mA Low distortion
−93 dBc second harmonic, f
−108 dBc third harmonic, f
DC precision
1 mV maximum input offset voltage
0.5 μV/°C input offset voltage drift Wide supply range, 5 V to 24 V Low price Small packaging
Available in SOIC-8 and MSOP-8

APPLICATIONS

ADC preamps and drivers Instrumentation preamps
Active filters Portable instrumentation Line receivers Precision instruments
Ultrasound signal processing
High gain circuits

GENERAL DESCRIPTION

The AD8021 is an exceptionally high performance, high speed voltage feedback amplifier that can be used in 16-bit resolution systems. It is designed to have both low voltage and low current noise (2.1 nV/√Hz typical and 2.1 pA/√Hz typical) while operating at the lowest quiescent supply current (7 mA @ ±5 V) among today’s high speed, low noise op amps. The AD8021 operates over a wide range of supply voltages from ±2.25 V to ±12 V, as well as from single 5 V supplies, making it ideal for high speed, low power instruments. An output disable pin allows further reduction of the quiescent supply current to 1.3 mA.
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
= 1 MHz
C
= 1 MHz
C
for 16-Bit Systems
AD8021

CONNECTION DIAGRAM

LOGIC
REFERENCE
–IN
+IN
–V
Figure 1. SOIC-8 (R-8) and MSOP-8 (RM-8)
The AD8021 allows the user to choose the gain bandwidth p
roduct that best suits the application. With a single capacitor, the user can compensate the AD8021 for the desired gain with little trade-off in bandwidth. The AD8021 is a well-behaved amplifier that settles to 0.01% in 23 ns for a 1 V step. It has a fast overload recovery of 50 ns.
The AD8021 is stable over temperature with low input offset v
oltage drift and input bias current drift, 0.5 μV/°C and 10 nA/°C, respectively. The AD8021 is also capable of driving a 75 Ω line with ±3 V video signals.
The AD8021 is both technically superior and priced considerably l
ess than comparable amps drawing much higher quiescent current. The AD8021 is a high speed, general-purpose amplifier, ideal for a wide variety of gain configurations and can be used throughout a signal processing chain and in control loops. The AD8021 is available in both standard 8-lead SOIC and MSOP packages in the industrial temperature range of −40°C to +85°C.
24
= 50mV p-p
V
OUT
21
G = –10, R
18
15
12
9
6
3
CLOSED-LOOP GAIN (dB)
0
–3
–6
0.1M 1G1M 10M 100M
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.
F
R
= 100Ω, CC = 0pF
IN
G = –5, R
= 1kΩ, RG = 200Ω,
F
R
= 66.5Ω, CC = 1.5pF
IN
= 499Ω, RG = 249Ω,
G = –2, R
F
R
= 63.4Ω, CC = 4pF
IN
G = –1, R
= 499Ω, RG = 499Ω,
F
R
= 56.2Ω, CC = 7pF
IN
Figure 2. Small Signal Fr
AD8021
1
2
3
4
S
= 1kΩ, RG = 100Ω,
FREQUENCY (Hz)
8
DISABLE
+V
7
S
V
6
OUT
C
5
COMP
equency Response
01888-001
01888-002
AD8021
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TABLE OF CONTENTS

Features .............................................................................................. 1
Applications..................................................................................... 19
Applications....................................................................................... 1
General Description......................................................................... 1
Connection Diagram .......................................................................1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Absolute Maximum Ratings............................................................ 7
Maximum Power Dissipation ..................................................... 7
ESD Caution.................................................................................. 7
Pin Configuration and Function Descriptions............................. 8
Typical Performance Characteristics............................................. 9
Test Circ uit s................................................................................. 17

REVISION HISTORY

5/06—Rev. E to Rev. F
Updated Format..................................................................Universal
Changes to General Description .................................................... 1
Changes to Figure 3.......................................................................... 7
Changes to Figure 60...................................................................... 19
Changes to Table 9.......................................................................... 23
3/05—Rev. D to Rev. E
U
pdated Format..................................................................Universal
Change to Figure 19 ....................................................................... 11
Change to Figure 25 ....................................................................... 12
Change to Table 7 and Table 8 ...................................................... 22
Change to Driving 16-Bit ADCs Section .................................... 22
Using the Disable Feature.......................................................... 20
Theory of Operation ...................................................................... 21
PCB Layout Considerations...................................................... 21
Driving 16-Bit ADCs................................................................. 22
Differential Driver...................................................................... 22
Using the AD8021 in Active Filters .........................................23
Driving Capacitive Loads.......................................................... 23
Outline Dimensions .......................................................................25
Ordering Guide .......................................................................... 25
7/03—Rev. B to Rev. C
eleted All References to Evaluation Board...................Universal
D
Replaced Figure 2 ..............................................................................5
Updated Outline Dimensions....................................................... 20
2/03—Rev. A to Rev. B
E
dits to Evaluation Board Applications....................................... 20
Edits to Figure 17 ........................................................................... 20
6/02—Rev. 0 to Rev. A
dits to Specifications.......................................................................2
E
10/03—Rev. C to Rev. D
U
pdated Format..................................................................Universal
Rev. F | Page 2 of 28
AD8021
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SPECIFICATIONS

VS = ±5 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
Table 1.
Parameter Conditions
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth
Slew Rate, 1 V Step
Settling Time to 0.01% Overload Recovery (50%)
DISTORTION/NOISE PERFORMANCE
G = +1, C G = +2, C G = +5, C G = +10, C G = +1, C G = +2, C G = +5, C G = +10, C V
O
= 10 pF, VO = 0.05 V p-p 355 490
C
= 7 pF, VO = 0.05 V p-p 160 205
C
= 2 pF, VO = 0.05 V p-p 150 185
C
= 0 pF, VO = 0.05 V p-p 110 150
C
= 10 pF 95 120
C
= 7 pF 120 150
C
= 2 pF 250 300
C
= 0 pF 380 420
C
= 1 V step, RL = 500 Ω
±2.5 V input step, G = +2
AD8021AR/AD8021ARM
Min Typ Max Unit
23 50
f = 1 MHz
HD2 HD3
= 2 V p-p
V
O
= 2 V p-p
V
O
−93
−108
f = 5 MHz
HD2
HD3 Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error
DC PERFORMANCE
= 2 V p-p
V
O
= 2 V p-p
V
O
f = 50 kHz f = 50 kHz NTSC, R NTSC, R
= 150 Ω
L
= 150 Ω
L
Input Offset Voltage Input Offset Voltage Drift Input Bias Current
to T
MAX
T
MIN
+Input or −input Input Bias Current Drift Input Offset Current Open-Loop Gain
INPUT CHARACTERISTICS
Input Resistance Common-Mode Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio
OUTPUT CHARACTERISTICS
= ±4 V −86 −98
V
CM
Output Voltage Swing Linear Output Current Short-Circuit Current Capacitive Load Drive for 30% Overshoot
DISABLE CHARACTERISTICS
Off Isolation Turn-On Time Turn-Off Time DISABLE Voltage—Off/On Enabled Leakage Current
= 50 mV p-p/1 V p-p
V
O
f = 10 MHz
= 0 V to 2 V, 50% logic to 50% output
V
O
= 0 V to 2 V, 50% logic to 50% output
V
O
V
DISABLE
− V
LOGIC REFERENCE
LOGIC REFERENCE = 0.4 V
DISABLE
= 4.0 V
−70
−80
2.1 2.6 nV/√Hz
2.1
0.03
0.04
0.4 1.0 mV
0.5
7.5 10.5 μA 10
0.1 0.5 ±μA
82 86
10 1
−4.1 to +4.6
−3.5 to +3.2 −3.8 to +3.4 60 75 15/120
−40 45 50
1.75/1.90 70 2
MHz MHz MHz MHz V/μs V/μs V/μs V/μs ns ns
dBc dBc
dBc dBc
pA/√Hz % Degrees
μV/°C
nA/°C
dB
MΩ pF V dB
V mA mA pF
dB ns ns V μA μA
Rev. F | Page 3 of 28
AD8021
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Parameter Conditions
Disabled Leakage Current
POWER SUPPLY
Operating Range Quiescent Current
+Power Supply Rejection Ratio
−Power Supply Rejection Ratio
LOGIC REFERENCE = 0.4 V DISABLE
Output enabled Output disabled V V
= 0.4 V
= 4 V to 6 V, VEE = −5 V −86 −95
CC
= 5 V, VEE = −6 V to −4 V −86 −95
CC
AD8021AR/AD8021ARM
Min Typ Max Unit
±2.25 ±5 ±12.0 V
30 33
7.0 7.7 mA
1.3 1.6 mA
= ±12 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
V
S
Table 2.
AD8021AR/AD8021ARM Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, CC = 10 pF, VO = 0.05 V p-p 520 560 MHz G = +2, CC = 7 pF, VO = 0.05 V p-p 175 220 MHz G = +5, CC = 2 pF, VO = 0.05 V p-p 170 200 MHz G = +10, CC = 0 pF, VO = 0.05 V p-p 125 165 MHz Slew Rate, 1 V Step G = +1, CC = 10 pF 105 130 V/μs G = +2, CC = 7 pF 140 170 V/μs G = +5, CC = 2 pF 265 340 V/μs G = +10, CC = 0 pF 400 460 V/μs Settling Time to 0.01% VO = 1 V step, RL = 500 Ω 21 ns Overload Recovery (50%) ±6 V input step, G = +2 90 ns
DISTORTION/NOISE PERFORMANCE
f = 1 MHz
HD2 VO = 2 V p-p −95 dBc HD3 VO = 2 V p-p −116 dBc
f = 5 MHz
HD2 VO = 2 V p-p −71 dBc
HD3 VO = 2 V p-p −83 dBc Input Voltage Noise f = 50 kHz 2.1 2.6 nV/√Hz Input Current Noise f = 50 kHz 2.1 pA/√Hz Differential Gain Error NTSC, RL = 150 Ω 0.03 % Differential Phase Error NTSC, RL = 150 Ω 0.04 Degrees
DC PERFORMANCE
Input Offset Voltage 0.4 1.0 mV Input Offset Voltage Drift T Input Bias Current +Input or −input 8 11.3 μA Input Bias Current Drift 10 nA/°C Input Offset Current 0.1 0.5 ±μA Open-Loop Gain 84 88 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ Common-Mode Input Capacitance 1 pF Input Common-Mode Voltage Range −11.1 to +11.6 V Common-Mode Rejection Ratio VCM = ±10 V −86 −96 dB
to T
MIN
0.2 μV/°C
MAX
μA μA
dB dB
Rev. F | Page 4 of 28
AD8021
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AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
OUTPUT CHARACTERISTICS
Output Voltage Swing −10.2 to +9.8 −10.6 to +10.2 V Linear Output Current 70 mA Short-Circuit Current 115 mA Capacitive Load Drive for 30% Overshoot VO = 50 mV p-p/1 V p-p 15/120 pF
DISABLE CHARACTERISTICS
Off Isolation f = 10 MHz −40 dB Turn-On Time VO = 0 V to 2 V, 50% logic to 50% output 45 ns Turn-Off Time VO = 0 V to 2 V, 50% logic to 50% output 50 ns
V
DISABLE Voltage—Off/On Enabled Leakage Current LOGIC REFERENCE = 0.4 V 70 μA
Disabled Leakage Current LOGIC REFERENCE = 0.4 V 30 μA
POWER SUPPLY
Operating Range ±2.25 ±5 ±12.0 V Quiescent Current Output enabled 7.8 8.6 mA Output disabled 1.7 2.0 mA +Power Supply Rejection Ratio VCC = 11 V to 13 V, VEE = −12 V −86 −96 dB
−Power Supply Rejection Ratio VCC = 12 V, VEE = −13 V to −11 V −86 −100 dB
DISABLE
DISABLE
DISABLE
− V
LOGIC REFERENCE
= 4.0 V
= 0.4 V
1.80/1.95 V
2 μA
33 μA
V
= 5 V, @ TA = 25°C, RL = 1 kΩ, gain = +2, unless otherwise noted.
S
Table 3.
AD8021AR/AD8021ARM
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, CC = 10 pF, VO = 0.05 V p-p 270 305 MHz G = +2, CC = 7 pF, VO = 0.05 V p-p 155 190 MHz G = +5, CC = 2 pF, VO = 0.05 V p-p 135 165 MHz G = +10, CC = 0 pF, VO = 0.05 V p-p 95 130 MHz Slew Rate, 1 V Step G = +1, CC = 10 pF 80 110 V/μs G = +2, CC = 7 pF 110 140 V/μs G = +5, CC = 2 pF 210 280 V/μs G = +10, CC = 0 pF 290 390 V/μs Settling Time to 0.01% VO = 1 V step, RL = 500 Ω 28 ns Overload Recovery (50%) 0 V to 2.5 V input step, G = +2 40 ns
DISTORTION/NOISE PERFORMANCE
f = 1 MHz
HD2 VO = 2 V p-p −84 dBc HD3 VO = 2 V p-p −91 dBc
f = 5 MHz
HD2 VO = 2 V p-p −68 dBc
HD3 VO = 2 V p-p −81 dBc Input Voltage Noise f = 50 kHz 2.1 2.6 nV/√Hz Input Current Noise f = 50 kHz 2.1 pA/√Hz
Rev. F | Page 5 of 28
AD8021
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AD8021AR/AD8021ARM Parameter Conditions Min Typ Max Unit
DC PERFORMANCE
Input Offset Voltage 0.4 1.0 mV Input Offset Voltage Drift T Input Bias Current +Input or −input 7.5 10.3 μA Input Bias Current Drift 10 nA/°C Input Offset Current 0.1 0.5 ±μA Open-Loop Gain 72 76 dB
INPUT CHARACTERISTICS
Input Resistance 10 MΩ Common-Mode Input Capacitance 1 pF Input Common-Mode Voltage Range 0.9 to 4.6 V Common-Mode Rejection Ratio 1.5 V to 3.5 V −84 −98 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 1.25 to 3.38 1.10 to 3.60 V Linear Output Current 30 mA Short-Circuit Current 50 mA Capacitive Load Drive for 30% Overshoot VO = 50 mV p-p/1 V p-p 10/120 pF
DISABLE CHARACTERISTICS
Off Isolation f = 10 MHz −40 dB Turn-On Time VO = 0 V to 1 V, 50% logic to 50% output 45 ns Turn-Off Time VO = 0 V to 1 V, 50% logic to 50% output 50 ns DISABLE Voltage—Off/On Enabled Leakage Current LOGIC REFERENCE = 0.4 V 70 μA
Disabled Leakage Current LOGIC REFERENCE = 0.4 V 30 μA
POWER SUPPLY
Operating Range ±2.25 ±5 ±12.0 V Quiescent Current Output enabled 6.7 7.5 mA Output disabled 1.2 1.5 mA +Power Supply Rejection Ratio VCC = 4.5 V to 5.5 V, VEE = 0 V −74 −82 dB
−Power Supply Rejection Ratio VCC = 5 V, VEE = −0.5 V to +0.5 V −76 −84 dB
to T
MIN
V
DISABLE
DISABLE
DISABLE
0.8 μV/°C
MAX
− V
LOGIC REFERENCE
= 4.0 V
= 0.4 V
1.55/1.70 V
2 μA
33 μA
Rev. F | Page 6 of 28
AD8021
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ABSOLUTE MAXIMUM RATINGS

Table 4.
Parameter Rating
Supply Voltage 26.4 V Power Dissipation
Observed power
ating curves
der Input Voltage (Common Mode) ±VS ± 1 V Differential Input Voltage
1
±0.8 V Differential Input Current ±10 mA Output Short-Circuit Duration
Observed power
ating curves
der Storage Temperature Range −65°C to +125°C Operating Temperature Range −40°C to +85°C Lead Temperature (Soldering, 10 sec) 300°C
1
The AD8021 inputs are protected by diodes. Current-limiting resistors are
not used to preserve the low noise. If a differential input exceeds ±0.8 V, the input current should be limited to ±10 mA.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8021 is limited by the associated rise in junction tempera­ture. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit can cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure.
While the AD8021 is internally short-circuit protected, this can
ot be sufficient to guarantee that the maximum junction tem-
n perature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.
2.0
1.5
8-LEAD SOIC
1.0
8-LEAD MSOP
0.5
MAXIMUM POW ER DISSIP ATION (W)
0.01 –55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65
1
Specification is for device in free air: 8-lead SOIC: θJA = 125°C/W; 8-lead
Figure 3. Maximum Power Dissipation vs. Temperature
MSOP: θ
= 145°C/W.
JA
AMBIENT TEM PERATURE (°C)

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
01888-004
5
8
75
1
Rev. F | Page 7 of 28
AD8021
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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

LOGIC
REFERENCE
–IN
+IN
–V
Figure 4. Pin Configuration
AD8021
1
2
3
4
S
8
DISABLE
+V
7
V
6
C
5
S
OUT
COMP
01888-003
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 LOGIC REFERENCE Reference for Pin 81 Voltage Level. Connect to logic low supply. 2 −IN Inverting Input. 3 +IN Noninverting Input. 4 −V 5 C 6 V
S
Compensation Capacitor. Tie to −VS. (See the Applications section for value.)
COMP
Output.
OUT
Negative Supply Voltage.
7 +VS Positive Supply Voltage. 8
1
When Pin 8 (
Pin 1, the part is disabled. (See the Specifications tables for exact disable and enable voltage levels.) If the disable feature is not going to be used, Pin 8 can be tied to +VS or a logic high source, and Pin 1 can be tied to ground or logic low. Alternatively, if Pin 1 and Pin 8 are not connected, the part is in an enabled state.
DISABLE
DISABLE
) is higher than Pin 1 (LOGIC REFERENCE) by approximately 2 V or more, the part is enabled. When Pin 8 is brought down to within about 1.5 V of
Disable, Active Low.
Rev. F | Page 8 of 28
AD8021
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TYPICAL PERFORMANCE CHARACTERISTICS

TA = 25°C, VS = ±5 V, RL = 1 kΩ, G = +2, RF = RG = 499 Ω, RS = 49.9 Ω, RO = 976 Ω, RD = 53.6 Ω, CC = 7 pF, CL = 0, CF = 0, V frequency = 1 MHz, unless otherwise noted.
24
G = +10, R
21
18
G = +5, R
15
12
9
G = +2, R
6
3
CLOSED-LOOP GAIN (dB)
G = +1, R
0
–3
–6
0.1M 1G1M 10M 100M
= 1kΩ, RG = 110, CC = 0pF
F
= 1k, RG = 249Ω, CC = 2pF
F
= RG = 499Ω, CC = 7pF
F
= 75, CC = 10pF
F
FREQUENCY (Hz)
01888-005
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
10M 100M
FREQUENCY (Hz)
VS = ±2.5V
VS = ±2.5V
OUT
VS = ±5V
VS = ±12V
= 2 V p-p,
01888-008
1G1M
Figure 5. Small S ignal Freq uency Respons e vs. Frequency and Gain,
V
= 50 mV p-p, Noninverting (See Figure 48)
OUT
24
21
G = –10, RF = 1kΩ, RG = 100Ω,
18
= 100Ω, CC = 0pF
R
IN
15
= 1kΩ, RG = 200Ω,
G = –5, R
12
9
GAIN (dB)
6
3
0
–3
–6
0.1M 1G1M 10M 100M
F
= 66.5Ω, CC = 1.5pF
R
IN
= 499Ω, RG = 249Ω,
G = –2, R
F
= 63.4Ω, CC = 4pF
R
IN
= 499Ω, RG = 499Ω,
G = –1, R
F
= 56.2Ω, CC = 7pF
R
IN
FREQUENCY (Hz)
Figure 6. Small S ignal Freq uency Respons e vs. Frequency and
in, V
Ga
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
0.1M 1G1M
= 50 mV p-p Inverting (See Figure 48)
OUT
= 9pF
C
C
C
= 7pF
C
CC = 9pF
10M 100M
FREQUENCY (Hz)
C
C
C
C
= 5pF
= 7pF
Figure 7. Small S ignal Freq uency Respons e vs. Frequency and
ensation Capacitor, V
Comp
= 50 mV p-p (See Figu re 48)
OUT
01888-006
01888-007
Figure 8. Small S ignal Freq uency Respons e vs. Frequency and Supply,
= 50 mV p-p, Noninverting (See Figure 48)
V
OUT
3
G = –1
2
1
0
–1
–2
GAIN (dB)
–3
–4
–5
–6
–7
10M 100M
FREQUENCY (Hz)
VS = ±2.5V
VS = ±12V
VS = ±2.5V
VS = ±5V
01888-009
1G1M
Figure 9. Small S ignal Freq uency Respons e vs. Frequency and Supply,
V
= 50 mV p-p, Inverting (See Figure 50)
OUT
9
G = +2
8
7
6
5
4
GAIN (dB)
3
2
1
0
–1
V
= 4V p-p
OUT
V
= 1V p-p
OUT
10M 100M
Figure 10. Frequency Response v s. Frequency and V
V
= 0.1V AND 50mV p -p
OUT
FREQUENCY (Hz)
, Noninverting
OUT
01888-010
1G1M
(See Figure 48)
Rev. F | Page 9 of 28
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