Analog Devices AD8019ARU-REEL, AD8019ARU-EVAL, AD8019ARU, AD8019AR-REEL, AD8019AR-EVAL Datasheet

...

DSL Line Driver

FREQUENCY – kHz

132.5

10dB/DIV

137.5 142.5

–80dBc

FEATURES Low Distortion, High Output Current Amplifiers

Operate from 12 V to ⴞ12 V Power Supplies, Ideal for High-Performance ADSL CPE, and xDSL

Modems

Low Power Operation

9 mA/Amp (Typ) Supply Current

Digital (1-Bit) Power-Down Voltage Feedback Amplifiers Low Distortion

Out-of-Band SFDR –80 dBc @ 100 kHz into 100 ⍀ Line High Speed

175 MHz Bandwidth (–3 dB), G = +1

400 V/␮s Slew Rate High Dynamic Range

to within 1.2 V of Power Supply

OUT

APPLICATIONS ADSL, VDSL, HDSL, and Proprietary xDSL USB, PCI,

PCMCIA Modems, and Customer Premise Equipment

(CPE)

8-Lead SOIC

AD8019AR

OUT1

–IN1

+IN1

–V

with Power-Down

PIN CONFIGURATIONS

14-Lead TSSOP

(R-8)

OUT2

–IN2

+IN2

OUT1

–IN1

+IN1

–V

PWDN

AD8019

(RU-14)

AD8019ARU

NC = NO CONNECT

OUT2

–IN2

+IN2

DGND

PRODUCT DESCRIPTION

The AD8019 is a low cost xDSL line driver optimized to drive a minimum of 13 dBm into a 100 Ω load while delivering outstanding distortion performance. The AD8019 is designed on a 24 V high-speed bipolar process enabling the use of ±12 V power supplies or 12 V only. When operating from a single 12 V supply the highly efficient amplifier architecture can typically deliver 170 mA output current into low impedance loads through a 1:2 turns ratio transformer. Hybrid designs using ±12 V supplies enable the use of a 1:1 turns ratio transformer, minimizing attenuation of the receive signal. The AD8019 typically draws 9 mA/ amplifier quiescent current. A 1-bit digital power down feature reduces the quiescent current to approximately 1.6 mA/amplifier.

Figure 1 shows typical Out of Band SFDR performance under ADSL CPE (upstream) conditions. SFDR is measured while driving a 13 dBm ADSL DMT signal into a 100 Ω line with 50 Ω back termination.

The AD8019 comes in thermally enhanced 8-lead SOIC and 14-lead TSSOP packages. The 8-lead SOIC is pin-compatible with the AD8017 12 V line driver.

Figure 1. Out-of-Band SFDR; VS = ±12 V; 13 dBm Output

Ω

Power into 200

, Upstream

REV. 0

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001

AD8019–SPECIFICATIONS

(@ 25ⴗC, VS = 12 V, RL = 25 ⍀, RF = 500 ⍀, T otherwise noted.)

= –40ⴗC, T

MIN

= +85ⴗC, unless

MAX

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +5 35 MHz

G = +1, V G = +2, V

0.1 dB Bandwidth V

< 0.4 V p-p, RL = 100 Ω 6 MHz

OUT

G = +5, V

Large Signal Bandwidth V

= 4 V p-p 50 MHz

OUT

Slew Rate Noninverting, V Rise and Fall Time Noninverting, V Settling Time 0.1%, V

< 0.4 V p-p, RL = 100 Ω 175 180 MHz

OUT

< 0.4 V p-p, RL = 100 Ω 70 75 MHz

OUT

< 0.4 V p-p, RL = 100 Ω 35 MHz

OUT

= 4 V p-p 450 V/µs

OUT

= 2 V p-p 5.5 ns

OUT

= 2 V p-p 40 ns

OUT

NOISE/DISTORTION PERFORMANCE

Distortion V

Second Harmonic 100 kHz, R

Third Harmonic 100 kHz, R

Out-of-Band SFDR 144 kHz–1.1 MHz, Differential R MTPR 25 kHz–138 kHz, Differential R

= 3 V p-p (Differential)

OUT

500 kHz, R

= 50 Ω –78 dBc

L(DM)

= 50 Ω –74 dBc

L(DM)

= 50 Ω –85 dBc

L(DM)

= 50 Ω –80 dBc

L(DM)

= 70 Ω –80 dBc

= 70 Ω –72 dBc

Input Voltage Noise f = 100 kHz 8 nV/√Hz Input Current Noise f = 100 kHz 0.9 pA√Hz Crosstalk f = 1 MHz, G = +2 –80 dB

DC PERFORMANCE

Input Offset Voltage 820mV

MIN–TMAX

10 23 mV

Input Offset Voltage Match 112mV

Open-Loop Gain V

MIN–TMAX

= 6 V p-p, RL = 25 Ω 72 80 dB

OUT

MIN–TMAX

72 80 dB

217mV

INPUT CHARACTERISTICS

Input Resistance 10 MΩ Input Capacitance 0.5 pF +Input Bias Current –3 +1 +3 µA

MIN–TMAX

–4 +4 µA

–Input Bias Current –1.5 –0.5 +1.5 µA

MIN–TMAX

–1.8 +1.8 µA

+Input Bias Current Match –1.0 –0.2 +1.0 µA

MIN–TMAX

–1.5 +1.5 µA

–Input Bias Current Match –0.5 +0.1 +0.5 µA

CMRR ∆V

MIN–TMAX

= –4 V to +4 V 71 74 dB

–0.8 +0.8 µA

Input CM Voltage Range 2 10 V

OUTPUT CHARACTERISTICS

Output Resistance 0.2 Ω Output Voltage Swing R Output Current SFDR –80 dBc into 25 Ω at 100 kHz 175 200 mA Short Circuit Current

= 25 Ω –4.8 +4.8 V

400 mA

POWER SUPPLY

Supply Current/Amp PWDN = 5 V 9 10.5 mA

MIN–TMAX

14.5 mA

PWDN = 0 V 0.8 2.0 mA

Operating Range Dual Supply ±4.0 ±6.0 V Power Supply Rejection Ratio ∆±VS = +1.0 V to –1.0 V 65 68 dB

LOGIC LEVELS V

OFF

PWDN = “1” Voltage 1.8 +V

= 0 V to 3 V; VIN = 10 MHz, G = +5

PWDN

120 ns 80 ns

PWDN = “0” Voltage 0.5 V PWDN = “1” Bias Current 220 µA PWDN = “0” Bias Current –100 µA

NOTES

This device is protected from overheating during a short-circuit by a thermal shutdown circuit.

Specifications subject to change without notice.

–2–

REV. 0

AD8019

(@ 25ⴗC, VS = ⴞ12 V, RL = 100 ⍀, RF = 500 ⍀, T

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +5 35 MHz

0.1 dB Bandwidth V Large Signal Bandwidth V Slew Rate Noninverting, V Rise and Fall Time Noninverting, V Settling Time 0.1%, V

NOISE/DISTORTION PERFORMANCE

Distortion V

Second Harmonic 100 kHz, R

Third Harmonic 100 kHz, R

Out-of-Band SFDR 144 kHz–500 kHz, Differential R MTPR 25 kHz–138 kHz, Differential R Input Voltage Noise f = 100 kHz 8 nV/√Hz Input Current Noise f = 100 kHz 0.9 pA√Hz Crosstalk f = 1 MHz, G = +2 –85 dB

DC PERFORMANCE

Input Offset Voltage 520mV

Input Offset Voltage Match 112mV

Open-Loop Gain V

INPUT CHARACTERISTICS

Input Resistance 10 MΩ Input Capacitance 0.5 pF +Input Bias Current –3 –0.5 +3 µA

–Input Bias Current –1.5 –0.2 +1.5 µA

+Input Bias Current Match –1.0 +0.2 +1.0 µA

–Input Bias Current Match –1.0 +0.1 +1.0 µA

CMRR ∆V Input CM Voltage Range –10 +10 V

OUTPUT CHARACTERISTICS

Output Resistance 0.2 Ω Output Voltage Swing RL = 100 Ω –10.8 +10.8 V Output Current SFDR –80 dBc into 100 Ω at 100 kHz 125 170 mA Short Circuit Current

POWER SUPPLY

Supply Current/Amp PWDN = High 9 10 mA

Operating Range Dual Supply ±4.0 ± 12 V Power Supply Rejection Ratio ∆±VS = +1.0 V to –1.0 V 61 64 dB

LOGIC LEVELS V

OFF

PWDN = “1” Voltage 1.8 +V PWDN = “0” Voltage 0.5 V PWDN = “1” Bias Current 220 µA PWDN = “0” Bias Current –100 µA

NOTES

This device is protected from overheating during a short-circuit by a thermal shutdown circuit.

Specifications subject to change without notice.

REV. 0

= –40ⴗC, T

MIN

G = +1, V G = +2, V

< 0.4 V p-p 5.5 MHz

OUT

= 4 V p-p 50 MHz

OUT

= 16 V p-p (Differential)

OUT

500 kHz, R

MIN–TMAX

= 18 V p-p, RL = 100 Ω 86 92 dB

OUT

MIN–TMAX

= –10 V to +10 V 71 76 dB

= +85ⴗC, unless otherwise noted.)

MAX

< 0.4 V p-p 175 180 MHz

OUT

< 0.4 V p-p 70 75 MHz

OUT

= 4 V p-p 400 V/µs

OUT

= 2 V p-p 5.5 ns

OUT

= 2 V p-p 40 ns

= 200 Ω –80 dBc

L(DM)

= 200 Ω –72 dBc

L(DM)

= 200 Ω –85 dBc

L(DM)

= 200 Ω –80 dBc

L(DM)

= 200 Ω –80 dBc

= 200 Ω –73 dBc

10 mV

218mV

90 dB

–3.8 +3.8 µA

–1.7 +1.7 µA

–2.4 +2.4 µA

–2.5 +2.5 µA

800 mA

MIN–TMAX

11.5 mA

PWDN = Low 0.8 1.75 mA

= 0 V to 3 V; VIN = 10 MHz, G = +5

PWDN

120 ns 80 ns

–3–

AD8019

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.4 V

Internal Power Dissipation

TSSOP-14 Package SOIC-8 Package

Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ± V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ± V

. . . . . . . . . . . . . . . . . . . . . . . . . 2.2 W

. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4 W

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range . . . . . . . . . . . . –65°C to +125°C

Operating Temperature Range . . . . . . . . . . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C

NOTES

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Specification is for device on a four-layer board with 10 inches2 of 1 oz. copper at

85°C 14-lead TSSOP package: θJA = 90°C/W.

Specification is for device on a four-layer board with 10 inches2 of 1 oz. copper at

85°C 8-lead SOIC package: θJA = 100°C/W.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8019 is limited by the associated rise in junction temperature. The maximum safe junction temperature for a plastic encapsulated device is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package.

The output stage of the AD8019 is designed for maximum load current capability. As a result, shorting the output to common can cause the AD8019 to source or sink 500 mA. To ensure proper operation, it is necessary to observe the maximum power derating curves. Direct connection of the output to either power supply rail can destroy the device.

2.5

2.0

1.5

1.0

0.5

MAXIMUM POWER DISSIPATION – W

TSSOP

SOIC

–40 –30 –20

–10

0102030

AMBIENT TEMPERATURE – ⴗC

Figure 2. Plot of Maximum Power Dissipation vs. Temperature for AD8019 for T

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

AD8019ARU –40°C to +85°C 14-Lead TSSOP RU-14 AD8019ARU-Reel –40°C to +85°C 14-Lead TSSOP RU-14 Reel AD8019ARU-EVAL –40°C to +85°C Evaluation Board ARU-EVAL AD8019AR –40°C to +85°C 8-Lead SOIC R-8 AD8019AR-Reel –40°C to +85°C 8-Lead SOIC R-8 Reel AD8019AR-EVAL –40°C to +85°C Evaluation Board AR EVAL

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8019 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

40 50 60 70 80

= 150°C

–4–

REV. 0

124⍀ 499⍀

49.9⍀

0.1␮F

10␮F

TPC 1. Single-Ended Test Circuit; G = +5

Typical Performance Characteristics–AD8019

55⍀

500⍀

–V

OUT

0.1␮F

–V

47␮F

0.1␮F

–V

50⍀

0.1␮F

50⍀

TPC 4. Differential Test Circuit; G = +10

100

– mV

OUT

–20

–40

–60

–80

–100

0 100 200 300 400 500 600 700

–100

TIME – ns

TPC 2. 100 mV Step Response; G = +5, VS = ±6 V,

= 25 Ω, Single-Ended

100

–20

VOLTS – mV

–40

–60

–80

–100

0 100 200 300 400 500 600 700

–100

TIME – 100ns/DIV

TPC 5. 100 mV Step Response; G = +5, VS = ±12 V,

= 100 Ω, Single-Ended

– Volts

OUT

–1

–2

–3

–4

0 100 200 300 400 500 600 700

–100

TIME – ns

TPC 3. 4 V Step Response; G = +5, VS = ±6 V,

= 25 Ω, Single-Ended

REV. 0

–5–

– Volts

OUT

–1

–2

–3

–4

0 100 200 300 400 500 600 700

–100

TIME – ns

TPC 6. 4 V Step Response; G = +5, VS = ±12 V,

= 100 Ω, Single-Ended

AD8019

–20

–30

–40

–50

–60

–70

DISTORTION – dBc

–80

–90

–100

0.01

2ND

0.1

FREQUENCY – MHz

3RD

TPC 7. Distortion vs. Frequency; VS = ±12 V, RL = 200 Ω, Differential, V

–30

–40

–50

–60

–70

DISTORTION – dBc

–80

–90

= 16 V p-p

2ND HARMONIC

3RD HARMONIC

–20

–30

–40

–50

–60

–70

DISTORTION – dBc

–80

–90

–100

0.01

3RD

2ND

0.1

FREQUENCY – MHz

TPC 10. Distortion vs. Frequency; VS = ±6 V, RL = 50 Ω, Differential, V

–20

–30

–40

–50

–60

–70

DISTORTION – dBc

–80

–90

= 3 V p-p

2ND

3RD

–100

100 125 150 175 200

PEAK OUTPUT CURRENT – mA

TPC 8. Distortion vs. Peak Output Current; VS = ±6 V;

= 10 Ω; f = 100 kHz; Single-Ended; Second Harmonic

–20

–30

–40

–50

–60

–70

DISTORTION – dBc

–80

–90

–100

2ND HARMONIC

3RD HARMONIC

100

125 150 175

PEAK OUTPUT CURRENT – mA

200

225

250

TPC 9. Distortion vs. Peak Output Current; VS = ±12 V;

= 25 Ω; f = 100 kHz; Single-Ended; Second Harmonic

–100

246 810

DIFFERENTIAL OUTPUT VOLTAGE – V p-p

12 14 16 18 20

TPC 11. Distortion vs. Output Voltage; f = 100 kHz,

= ±6 V, G = +10, RL = 50Ω, Differential

–10

–20

–30

–40

–50

–60

–70

DISTORTION – dBc

–80

–90

–100

–110

0246810

DIFFERENTIAL OUTPUT VOLTAGE – V p-p

2ND

3RD

12 14 16 18 20

TPC 12. Distortion vs. Output Voltage; f = 500 kHz,

= ±6 V, G = +10, RL = 50 Ω, Differential

–6–

REV. 0

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