Analog Devices AD8010AR-REEL7, AD8010AR-REEL, AD8010AR-16-REEL7, AD8010AR-16-REEL, AD8010AR-16 Datasheet

200 mA Output Current

16

15

14

13

1

2

3

4

NC = NO CONNECT

NC

–IN

+IN

NC

+V

S

OUT

NC

–V

S

12

11

10

9

5

6

7

8

NC

NC

NC

NC

NC

NC

NC

NC

AD8010

a

FEATURES
200 mA of Output Current
9  Load
SFDR –54 dBc @ 1 MHz
Differential Gain Error 0.04%, f = 4.43 MHz
Differential Phase Error 0.06, f = 4.43 MHz
Maintains Video Specifications Driving Eight Parallel
75  Loads

0.02% Differential Gain

0.03 Differential Phase

0.1 dB Gain Flatness to 60 MHz
THD –72 dBc @ 1 MHz, R
IP3 42 dBm @ 5 MHz, R
1 dB Gain Compression 21 dBm @ 5 MHz, R
230 MHz –3 dB Bandwidth, G = +1, R
800 V/s Slew Rate, R
25 ns Settling Time to 0.1%
Available in 8-Lead DIP, 16-Lead Wide Body SOIC and
Thermally Enhanced 8-Lead SOIC

APPLICATIONS
Video Distribution Amplifier
VDSL, xDSL Line Driver
Communications
ATE
Instrumentation

= 18.75 

L

= 18.75 

L

= 18.75 

L

L

= 18.75 

L

= 100 

High-Speed Amplifier

AD8010

CONNECTION DIAGRAMS

8-Lead DIP and SOIC

AD8010

1

NC

2

–IN

3

+IN

4

S

NC = NO CONNECT

16-Lead Wide Body SOIC

8

NC

7

+V

S

6

OUT

5

NC–V

PRODUCT DESCRIPTION

The AD8010 is a low power, high current amplifier capable of
delivering a minimum load drive of 175 mA. Signal performance
such as 0.02% and 0.03° differential gain and phase error is
maintained while driving eight 75 Ω back terminated video lines.
The current feedback amplifier features gain flatness to 60 MHz
and –3 dB (G = +1) signal bandwidth of 230 MHz and only
requires a typical of 15.5 mA supply current from ±5 V supplies.
These features make the AD8010 an ideal component for Video
Distribution Amplifiers or as the drive amplifier within high data
rate Digital Subscriber Line (VDSL and xDSL) systems.

The AD8010 is an ideal component choice for any application
that needs a driver that will maintain signal quality when driving
low impedance loads.

The AD8010 is offered in three package options: an 8-lead DIP,
16-lead wide body SOIC and a low thermal resistance 8-lead
SOIC, and operates over the industrial temperature range of
–40°C to +85°C.

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

75

R

F

R

G

V

IN

R

T

+5V

AD8010

R

S

–5V

75

V

V

V

V

V

V

V

V

OUT1

OUT2

OUT3

OUT4

OUT5

OUT6

OUT7

OUT8

Figure 1. Video Distribution Amplifier

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

AD8010–SPECIFICATIONS

RF = RG = 562  (N-8), RF = RG = 499  (R-8). T

M

odel Conditions Min Typ Max Unit

MIN

(@ 25C, VS = 5 V, G = +2, RL = 18.75 , RS+ = 150 , RF = RG = 604  (R-16),

= –40C, T

= +85C unless otherwise noted)

MAX

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +1, V

G = +2, V

0.1 dB Bandwidth V
Large Signal Bandwidth V
Peaking V
Slew V
Rise and Fall Time V

= 0.2 V p-p 30 60 MHz

OUT

= 4 V p-p 90 MHz

OUT

= 0.2 V p-p, < 5 MHz 0.02 dB

OUT

= 2 V p-p 800 V/µs

OUT

= 2 V p-p 2.0 ns

OUT

Settling Time 0.1%, V

= 0.2 V p-p 180 230 MHz

OUT

= 0.2 V p-p 130 190 MHz

OUT

= 2 V p-p 25 ns

OUT

NOISE/HARMONIC PERFORMANCE

Distortion V

= 2 V p-p

OUT

2nd Harmonic 1 MHz –73 dBc

5 MHz –58 dBc
10 MHz –53 dBc
10 MHz, R

= 39 Ω –67 dBc

L

20 MHz –44 dBc

3rd Harmonic 1 MHz –77 dBc

5 MHz –63 dBc
10 MHz –57 dBc
10 MHz, R

= 39 Ω –63 dBc

L

20 MHz –50 dBc

IMD 5 MHz ∆f = 10 kHz –73 dBc
IP3 5 MHz 42 dBm
1 dB Gain Compression 5 MHz 21 dBm
Input Noise Voltage f = 10 kHz 2 nV√Hz
Input Noise Current f = 10 kHz, +In 3 pA√Hz

f = 20 kHz, –In 20 pA√Hz

Differential Gain f = 4.43 MHz, R

= 150 Ω 0.02 %

L

f = 4.43 MHz, RL = 18.75 Ω 0.02 %

Differential Phase f = 4.43 MHz, R

= 150 Ω 0.02 Degrees

L

f = 4.43 MHz, RL =18.75 Ω 0.03 Degrees

DC PERFORMANCE

Input Offset Voltage 512mV

T

MIN–TMAX

15 mV

Offset Drift 10 µV/°C
Input Bias Current (–) 10 135 µA

T

MIN–TMAX

200 µA

Input Bias Current (+) 612µA

T

MIN–TMAX

20 µA

INPUT CHARACTERISTICS

Input Resistance +Input 125 kΩ

–Input 12.5 Ω

Input Capacitance 2.75 pF
Common-Mode Rejection Ratio V

= ±2.5 V 50 54 dB

CM

Input Common-Mode Voltage Range ±2.5 V
Open Loop Transresistance V

= ±2.5 V 300 500 kΩ

OUT

T

MIN–TMAX

250 kΩ

OUTPUT CHARACTERISTICS

Output Voltage Swing

RL = 18.75 Ω ±2.1 ±2.5 V
R

= 150 Ω ±2.7 ±3.0 V

L

Output Current RL = 9 Ω 175 200 mA
Short-Circuit Current 240 mA
Capacitive Load Drive 40 pF

POWER SUPPLY

Operating Range ±4.5 ±6.0 V
Quiescent Current 15.5 17 mA

T

MIN

to T

MAX

20 mA

Power Supply Rejection Ratio +VS = +4 V to +6 V, –VS = +5 V 60 66 dB

+VS = +5 V, –VS = –4 V to –6 V 50 56 dB

Specifications subject to change without notice.

–2–

REV. B

AD8010

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Internal Power Dissipation

2

1

Plastic Package (N) . . . . . . Observe Power Derating Curves

Small Outline Package (R) . Observe Power Derating Curves
Wide Body SOIC (R-16) . . . Observe Power Derating Curves

Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range N, R . . . . . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . 300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air:

8-Lead Plastic Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 122°C/W
16-Lead SOIC Package: θJA = 73°C/W

3.0

2.5
8-LEAD MINI-DIP PACKAGE

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD8010 is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu­lated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Temporarily exceeding
this limit may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed­ing a junction temperature of +175°C for an extended period
can result in device failure.

While the AD8010 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (+150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maximum
power derating curves.

TJ = 150C

2.0

1.5

1.0

8-LEAD SOIC PACKAGE

0.5

MAXIMUM POWER DISSIPATION – Watts

0

–40 –30 –20 –10 0 102030 40 5060708090

–50

AMBIENT TEMPERATURE – C

16-LEAD SOIC
PACKAGE (WIDEBODY)

Figure 2. Plot of Maximum Power Dissipation vs. Temperature

ORDERING GUIDE

Model Temperature Range Package Description Package Options

AD8010AN –40°C to +85°C 8-Lead Plastic DIP N-8
AD8010AR –40°C to +85°C 8-Lead Plastic SOIC SO-8
AD8010AR-16 –40°C to +85°C 16-Lead Wide Body SOIC R-16
AD8010AR-REEL REEL SOIC 13" REEL
AD8010AR-REEL7 REEL SOIC 7" REEL
AD8010AR-16-REEL REEL SOIC 13" REEL
AD8010AR-16-REEL7 REEL SOIC 7" REEL

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8010 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

–3–REV. B

AD8010

NUMBER OF VIDEO LOADS

0.05

0.04

DIFFERENTIAL PHASE

0

162 4 6 8 10 12 14

0.03

0.02

0.01

DIFFERENTIAL GAIN – %

1

0.10

0.08

0

0.06

0.04

0.02

DIFFERENTIAL PHASE – Degrees

DIFFERENTIAL GAIN

–Typical Performance Characteristics

60

50

40

30

20

PERCENTAGE OF UNITS

10

dG

d

dG

d

dG

0

0

dG

0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12

DIFFERENTIAL GAIN dG IN %
DIFFERENTIAL PHASE d IN Degrees

d

d

d

dG (%)/d – Degrees

SAMPLE SIZE = 300
G = +2

f = 4.43MHz (PAL)

= 18.75

R

L

d

d d d d d

0.130.01

Figure 3. Distribution of Differential Gain (dG) and
Differential Phase (d

–45

G = +2

–50

VO = 2V p-p

AS SHOWN

R

L

–55

–60

RL = 18.75

–65

–70

–75

–80

HARMONIC DISTORTION – dBc

–85

–90

–95

RL = 100

12 56789102034

φ

); RL = 18.75

2ND

3RD

3RD

2ND

FREQUENCY – MHz

Ω

Figure 4. Harmonic Distortion vs. Frequency; G = +2

Figure 6. Differential Gain and Phase vs. Number of Video

°

Loads Over Temperature (–40

45

40

35

30

25

20

INTERCEPT POINT – dBm

15

10

5

G = +2

= 18.75

R

L

1 10010

C to +85°C); f = 4.43 MHz

FREQUENCY – MHz

Figure 7. Two-Tone, 3rd Order IMD Intercept vs.
Frequency; G = +2, R

= 18.75

L

Ω

G = +2

6.20
R

= 18.75

L

= 0.2V p- p

V

O

6.15

6.10

6.05

6.0

5.95

5.90

GAIN FLATNESS – dB

5.85

5.80

0.1 1
FREQUENCY – MHz

Figure 5. Gain Flatness vs. Frequency Over Temperature

°

C to +85°C)

(–40

+85C

+25C

–40C

10 100

500

6.5

G = +2

6.4

= 0.2V p-p

V

O

NUMBER OF VIDEO

6.3

LOADS AS SHOWN

6.2

6.1

6.0

GAIN FLATNESS – dB

5.9

5.8

5.7

5.6

5.5

1

1

10

12

14

10 100

FREQUENCY – MHz

Figure 8. Gain Flatness vs. Frequency vs. Number of
Video Loads

–4–

4

2

6

8

1000

REV. B