Analog Devices AD8009JRT-REEL7, AD8009JRT-REEL, AD8009AR-REEL7, AD8009AR-REEL, AD8009AR Datasheet

1 GHz, 5,500 V/␮s

a

FEATURES
Ultrahigh Speed

5,500 V/␮s Slew Rate, 4 V Step, G = +2
545 ps Rise Time, 2 V Step, G = +2
Large Signal Bandwidth

440 MHz, G = +2
320 MHz, G = +10

Small Signal Bandwidth (–3 dB)

1 GHz, G = +1
700 MHz, G = +2

Settling Time 10 ns to 0.1%, 2 V Step, G = +2

Low Distortion Over Wide Bandwidth

SFDR

–44 dBc @ 150 MHz, G = +2, V
–41 dBc @ 150 MHz, G = +10, V

3rd Order Intercept (3IP)

26 dBm @ 70 MHz, G = +10
18 dBm @ 150 MHz, G = +10

Good Video Specifications

Gain Flatness 0.1 dB to 75 MHz

0.01% Differential Gain Error, R

0.01ⴗ Differential Phase Error, R

High Output Drive

175 mA Output Load Drive
10 dBm with –38 dBc SFDR @ 70 MHz, G = +10

Supply Operation

ⴞ5 V Voltage Supply
14 mA (Typ) Supply Current

APPLICATIONS
Pulse Amplifier
IF/RF Gain Stage/Amplifiers
High Resolution Video Graphics
High Speed Instrumentations
CCD Imaging Amplifier

2

1

0

–1

VO = 2Vp–p

–2

–3

–4

–5

NORMALIZED GAIN – dB

–6

–7

–8

1

FREQUENCY RESPONSE – MHz

Figure 1. Large Signal Frequency Response; G = +2 & +10

REV. C

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reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

= 2 V p-p

O

= 2 V p-p

O

= 150 ⍀

L

= 150 ⍀

L

G = +10

= 200⍀

R

F

RL = 100⍀

100

G = +2

= 301⍀

R

F

RL = 150⍀

100010

Low Distortion Amplifier

AD8009

FUNCTIONAL BLOCK DIAGRAMS

8-Lead Plastic SOIC (SO-8) 5-Lead SOT-23 (RT-5)

AD8009

1

NC

2

–IN

3

+IN

4

–V

S

NC = NO CONNECT

8

NC

7

+V

6

OUT

NC

5

V

S

PRODUCT DESCRIPTION

The AD8009 is an ultrahigh speed current feedback amplifier
with a phenomenal 5,500 V/µs slew rate that results in a rise
time of 545 ps, making it ideal as a pulse amplifier.

The high slew rate reduces the effect of slew rate limiting and
results in the large signal bandwidth of 440 MHz required for
high resolution video graphic systems. Signal quality is main­tained over a wide bandwidth with worst case distortion of
–40 dBc @ 250 MHz (G = +10, 1 V p-p). For applications
with multitone signals such as IF signal chains, the third order
Intercept (3IP) of 12 dBm is achieved at the same frequency.
This distortion performance coupled with the current feedback
architecture make the AD8009 a flexible component for a gain
stage amplifier in IF/RF signal chains.

The AD8009 is capable of delivering over 175 mA of load
current and will drive four back terminated video loads while
maintaining low differential gain and phase error of 0.02% and

0.04° respectively. The high drive capability is also reflected in
the ability to deliver 10 dBm of output power @ 70 MHz with
–38 dBc SFDR.

The AD8009 is available in a small SOIC package and will
operate over the industrial temperature range –40°C to +85°C.
The AD8009 is also available in an SOT-23-5 and will operate
over the commercial temperature range 0°C to +70°C.

–30

G = 2

–40

R

= 301⍀

F

= 2V p-p

V

O

–50

–60

–70

DISTORTION – dBc

–80

–90

–100

1 20010 100

2ND,

150⍀ LOAD

FREQUENCY RESPONSE – MHz

2ND,

100⍀ LOAD

3RD,
150⍀ LOAD

Figure 2. Distortion vs. Frequency; G = +2

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Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

AD8009

1

OUT

2

–V

S

+IN

34

3RD,
100⍀ LOAD

5

+V

–IN

S

AD8009–SPECIFICATIONS

(@ TA = 25ⴗC, VS = ⴞ5 V, RL = 100 ⍀, for R Package: RF = 301 ⍀ for G = +1, +2,

RF = 200 ⍀ for G = +10, for RT Package: RF = 332 ⍀ for G = +1, RF = 226 ⍀ for G = +2 and RF = 191 for G = +10, unless otherwise noted.)

AD8009AR/JRT

Model Conditions Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth, V

R Package G = +1, R
RT Package G = +1, R

= 0.2 V p-p

O

= 301 Ω 1000 MHz

F

= 332 Ω 845 MHz

F

G = +2 480 700 MHz
G = [phone] MHz

Large Signal Bandwidth, V

= 2 V p-p G = +2 390 440 MHz

O

G = [phone] MHz
Gain Flatness 0.1 dB, V
Slew Rate G = +2, R
Settling Time to 0.1% G = +2, R

= 0.2 V p-p G = +2, RL = 150 Ω 45 75 MHz

O

= 150 Ω, 4 V Step 4500 5500 V/µs

L

= 150 Ω, 2 V Step 10 ns

L

G = +10, 2 V Step 25 ns
Rise and Fall Time G = +2, RL = 150 Ω, 4 V Step 0.725 ns

HARMONIC/NOISE PERFORMANCE

SFDR G = +2, V

= 2 V p-p 5 MHz –74 dBc

O

70 MHz –53 dBc

150 MHz –44 dBc

SFDR G = +10, V

= 2 V p-p 5 MHz –58 dBc

O

70 MHz –41 dBc

150 MHz –41 dBc
Third Order Intercept (3IP) 70 MHz 26 dBm

W.R.T. Output, G = +10 150 MHz 18 dBm

250 MHz 12 dBm
Input Voltage Noise f = 10 MHz 1.9 nV/√Hz
Input Current Noise f = 10 MHz, +In 46 pA/√Hz

f = 10 MHz, –In 41 pA/√Hz

Differential Gain Error NTSC, G = +2, R

NTSC, G = +2, R

Differential Phase Error NTSC, G = +2, R

= 150 Ω 0.01 0.03 %

L

= 37.5 Ω 0.02 0.05 %

L

= 150 Ω 0.01 0.03 Degrees

L

NTSC, G = +2, RL = 37.5 Ω 0.04 0.08 Degrees

DC PERFORMANCE

Input Offset Voltage 25 mV

T

MIN–TMAX

7mV

Offset Voltage Drift 4 µV/°C
–Input Bias Current 50 150 ±µA

T

MIN–TMAX

75 ±µA

+Input Bias Voltage 50 150 ±µ A

T

MIN–TMAX

75 ±µA

Open Loop Transresistance 90 250 kΩ

T

MIN–TMAX

170 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 110 kΩ

–Input 8 Ω
Input Capacitance +Input 2.6 pF
Input Common-Mode Voltage Range 3.8 ±V
Common-Mode Rejection Ratio VCM = ±2.5 50 52 dB

OUTPUT CHARACTERISTICS

Output Voltage Swing ±3.7 ±3.8 V
Output Current R

= 10 Ω, PD Package = 0.7 W 150 175 mA

L

Short Circuit Current 330 mA

POWER SUPPLY

Operating Range ±4 ±6V
Quiescent Current 14 16 mA

T

MIN–TMAX

18 mA

Power Supply Rejection Ratio VS = ±4 V to ±6 V 64 70 dB

Specifications subject to change without notice.

–2–

REV. C

AD8009

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Internal Power Dissipation

2

1

Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 Watts

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 3.5 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range R Package . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . . –40°C to +85°C

Operating Temperature Range (J Grade) . . . . . . 0°C to +70°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air:

8-Lead SOIC Package: θJA = 155°C/W.

5-Lead SOT-23 Package: θJA = 240°C/W.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD8009 is limited by the associated rise in junction tempera­ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Exceeding
this limit temporarily may cause a shift in parametric perfor­mance due to a change in the stresses exerted on the die by the
package. Exceeding a junction temperature of 175°C for an
extended period can result in device failure.

While the AD8009 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the maxi­mum power derating curves.

2.0

TJ = +150°C

1.5

8-LEAD SOIC PACKAGE

1.0

0.5

MAXIMUM POWER DISSIPATION – Watts

0
–50

5-LEAD SOT-23 PACKAGE

AMBIENT TEMPERATURE – °C

9080

706050403020100–40 –30 –20 –10

Figure 3. Plot of Maximum Power Dissipation vs.
Temperature

ORDERING GUIDE

Temperature Package Package Branding

Model Range Description Option Information

AD8009ACHIPS –40°C to +85°C Die
AD8009AR –40°C to +85°C 8-Lead SOIC SO-8
AD8009AR-REEL –40°C to +85°C 8-Lead SOIC 13" Tape and Reel
AD8009AR-REEL7 –40°C to +85°C 8-Lead SOIC 7" Tape and Reel
AD8009JRT-REEL 0°C to +70°C 5-Lead SOT-23 13" Tape and Reel HKJ
AD8009JRT-REEL7 0°C to +70°C 5-Lead SOT-23 7" Tape and Reel HKJ
AD8009-EB Evaluation Board SO-8

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

REV. C

–3–

AD8009

–Typical Performance Characteristics

3

NORMALIZED GAIN – dB

2

1

0

–1

–2

–3

–4

–5

–6

–7

1

R PACKAGE
R

L

V

O

G = +1, +2: R

G = +10: R
RT PACKAGE

G = +1: RF = 332⍀
G = +2: RF = 226⍀
G = +10: R

:

= 100⍀

= 200mV p–p

F

= 200⍀

F

= 191⍀

F

= 301⍀

:

10 100

FREQUENCY – MHz

G = +1, RT

G = +2, R & RT

G = +10, R & RT

G = +1, R

1000

Figure 4. Frequency Response; G = +1, +2, +10, R and RT
Packages

8

7

6

5

G = +2

4

R

= 301⍀

GAIN – dB

3

2

1

0

–1

–2

F

RL = 150⍀
VO AS SHOWN

FREQUENCY – MHz

4V p–p

2V p–p

1001 100010

Figure 5. Large Signal Frequency Response; G = +2

6.2

6.1

6.0

5.9
G = +2

R

= 301⍀

5.8

F

= 150⍀

R

L

5.7

VO = 200mV p–p

5.6

5.5

GAIN FLATNESS – dB

5.4

5.3

5.2

10 1001

FREQUENCY – MHz

1000

Figure 7. Gain Flatness; G = +2

22

21

20

19

GAIN – dB

G = +10

18

17

16

15

14

13

12

= 200⍀

R

F

RL = 100⍀

AS SHOWN

V

O

4V p–p

1001 100010

FREQUENCY – MHz

2V p–p

Figure 8. Large Signal Frequency Response; G = +10

8

GAIN – dB

7

6

5

4

3

2

1

0

–1

–2

G = +2
RF = 301⍀

= 150⍀

R

L

VO = 2V p–p

–40ⴗC

1001 100010

FREQUENCY – MHz

+85ⴗC

–40ⴗC

+85ⴗC

Figure 6. Large Signal Frequency Response vs.

Temperature; G = +2

–4–

22

21

20

GAIN – dB

19

G = +10

18

= 200⍀

R

F

RL = 100⍀

17

= 2V p–p

V

O

16

15

14

13

12

FREQUENCY – MHz

1001 100010

–40ⴗC

+85ⴗC

Figure 9. Large Signal Frequency Response vs.
Temperature; G = +10

REV. C