Analog Devices AD8005ART-REEL7, AD8005ART-REEL, AD8005AR-REEL7, AD8005AR-REEL, AD8005AR Datasheet

REV. A

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a

AD8005

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

FEATURES
Ultralow Power

400 ␮A Power Supply Current (4 mW on ⴞ5 V

S

)

Specified for Single Supply Operation

High Speed

270 MHz, –3 dB Bandwidth (G = +1)
170 MHz, –3 dB Bandwidth (G = +2)
280 V/␮s Slew Rate (G = +2)
28 ns Settling Time to 0.1%, 2 V Step (G = +2)

Low Distortion/Noise

–63 dBc @ 1 MHz, V

O

= 2 V p-p

–50 dBc @ 10 MHz, V

O

= 2 V p-p

4.0 nV/√Hz Input Voltage Noise @ 10 MHz

Good Video Specifications (RL = 1 k⍀, G = +2)

Gain Flatness 0.1 dB to 30 MHz

0.11% Differential Gain Error

0.4ⴗ Differential Phase Error

APPLICATIONS
Signal Conditioning
A/D Buffer
Power-Sensitive, High-Speed Systems

Battery Powered Equipment
Loop/Remote Power Systems
Communication or Video Test Systems
Portable Medical Instruments

FUNCTIONAL BLOCK DIAGRAM

8-Lead Plastic DIP and SOIC

1
2
3
4

8
7
6
5

AD8005

NC
–IN
+IN

–V

S

NC
+V

S

OUT
NC

NC = NO CONNECT

5-Lead SOT-23

4

51
2
3

AD8005

–V

S

+V

S

–IN

OUT

+IN

PRODUCT DESCRIPTION

The AD8005 is an ultralow power, high-speed amplifier with a

wide signal bandwidth of 170 MHz and slew rate of 280 V/µs.
This performance is achieved while consuming only 400 µA of

quiescent supply current. These features increase the operating
time of high-speed battery-powered systems without reducing
dynamic performance.

FREQUENCY – MHz

0.1 50010 100

0

3

2

1

–1

–2

–3

–4

–5

–6

VS = ±5V

1

VS = +5V

NORMALIZED GAIN – dB

G = +2
V

OUT

= 200mV p-p

R

L

= 1kV

Figure 1. Frequency Response; G = +2, VS = +5 V or ±5V

270 MHz, 400 ␮A

Current Feedback Amplifier

The current feedback design results in gain flatness of 0.1 dB
to 30 MHz while offering differential gain and phase errors of

0.11% and 0.4°. Harmonic distortion is low over a wide

bandwidth with THDs of –63 dBc at 1 MHz and –50 dBc at
10 MHz. Ideal features for a signal conditioning amplifier or
buffer to a high-speed A-to-D converter in portable video,
medical or communication systems.

The AD8005 is characterized for +5 V and ±5 V supplies and
will operate over the industrial temperature range of –40°C to
+85°C. The amplifier is supplied in 8-lead plastic DIP, 8-lead

SOIC and 5-lead SOT-23 packages.

FREQUENCY – MHz

2010

–40

–60

–80

–100

–50

–70

–90

3RD

1

2ND

DISTORTION – dBc

G = +2
V

OUT

= 2V p-p

RL = 1kV

3RD

2ND

Figure 2. Distortion vs. Frequency; VS = ±5V

AD8005–SPECIFICATIONS

–2–

REV. A

ⴞ5 V SUPPLIES

AD8005A

Parameter Conditions Min Typ Max Units

DYNAMIC PERFORMANCE R

F

= 3.01 kΩfor “N” Package or

R

F

= 2.49 kΩ for “R” Package or

R

F

= 2.10 kΩ for “RT” Package

–3 dB Small Signal Bandwidth G = +1, V

O

= 0.2 V p-p 225 270 MHz

G = +2, V

O

= 0.2 V p-p 140 170 MHz

Bandwidth for 0.1 dB Flatness G = +2, V

O

= 0.2 V p-p 10 30 MHz

Large Signal Bandwidth G = +10, V

O

= 4 V p-p, R

F

= 499 Ω 40 MHz

Slew Rate (Rising Edge) G = +2, V

O

= 4 V Step 280 V/µs

G = –1, V

O

= 4 V Step, R

F

= 1.5 kΩ 1500 V/µs

Settling Time to 0.1% G = +2, VO = 2 V Step 28 ns

DISTORTION/NOISE PERFORMANCE R

F

= 3.01 kΩ for “N” Package or

R

F

= 2.49 kΩ for “R” Package or

R

F

= 2.10 kΩ for “RT” Package

Total Harmonic Distortion f

C

= 1 MHz, VO = 2 V p-p, G = +2 –63 dBc

f

C

= 10 MHz, VO = 2 V p-p, G = +2 –50 dBc
Differential Gain NTSC, G = +2 0.11 %
Differential Phase NTSC, G = +2 0.4 Degrees

Input Voltage Noise f = 10 MHz 4.0 nV/√Hz

Input Current Noise f = 10 MHz, +I

IN

1.1 pA/√Hz

–I

IN

9.1 pA/√Hz

DC PERFORMANCE

Input Offset Voltage 530±mV

T

MIN

to T

MAX

50 ±mV
Offset Drift 40 µV/°C
+Input Bias Current 0.5 1 ±µA

T

MIN

to T

MAX

2 ±µA
–Input Bias Current 510±µA

T

MIN

to T

MAX

12 ±µA
Input Bias Current Drift (±) 6nA/°C
Open-Loop Transimpedance 400 1000 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 90 MΩ

–Input 260 Ω

Input Capacitance +Input 1.6 pF

Input Common-Mode Voltage Range 3.8 ±V

Common-Mode Rejection Ratio V

CM

= ±2.5 V 46 54 dB

OUTPUT CHARACTERISTICS

Output Voltage Swing Positive +3.7 +3.90 V

Negative –3.90 –3.7 V

Output Current R

L

= 50 Ω 10 mA

Short Circuit Current 60 mA

POWER SUPPLY

Quiescent Current 400 475 µA

T

MIN

to T

MAX

560 µA

Power Supply Rejection Ratio V

S

= ±4 V to ±6 V 56 66 dB

OPERATING TEMPERATURE RANGE –40 +85 °C

Specifications subject to change without notice.

(@ TA = +25ⴗC, VS = ⴞ5 V, RL = 1 k⍀ unless otherwise noted)

+5 V SUPPLY

AD8005A

Parameter Conditions Min Typ Max Units

DYNAMIC PERFORMANCE R

F

= 3.01 kΩ for “N” Package or

R

F

= 2.49 kΩ for “R” Package or

R

F

= 2.10 kΩ for “RT” Package

–3 dB Small Signal Bandwidth G = +1, V

O

= 0.2 V p-p 190 225 MHz

G = +2, V

O

= 0.2 V p-p 110 130 MHz

Bandwidth for 0.1 dB Flatness G = +2, V

O

= 0.2 V p-p 10 30 MHz

Large Signal Bandwidth G = +10, V

O

= 2 V p-p, R

F

= 499 Ω 45 MHz

Slew Rate (Rising Edge) G = +2, V

O

= 2 V Step 260 V/µs

G = –1, V

O

= 2 V Step, R

F

= 1.5 kΩ 775 V/µs

Settling Time to 0.1% G = +2, VO = 2 V Step 30 ns

DISTORTION/NOISE PERFORMANCE R

F

= 3.01 kΩ for “N” Package or

R

F

= 2.49 kΩ for “R” Package or

R

F

= 2.10 kΩ for “RT” Package

Total Harmonic Distortion f

C

= 1 MHz, VO = 2 V p-p, G = +2 –60 dBc

f

C

= 10 MHz, VO = 2 V p-p, G = +2 –50 dBc

Differential Gain NTSC, G = +2, R

L

to 1.5 V 0.14 %

Differential Phase NTSC, G = +2, R

L

to 1.5 V 0.70 Degrees

Input Voltage Noise f = 10 MHz 4.0 nV/√Hz

Input Current Noise f = 10 MHz, +I

IN

1.1 pA/√Hz

–I

IN

9.1 pA/√Hz

DC PERFORMANCE

Input Offset Voltage 535±mV

T

MIN

to T

MAX

50 ±mV
Offset Drift 40 µV/°C
+Input Bias Current 0.5 1 ±µA

T

MIN

to T

MAX

2 ±µA
–Input Bias Current 510±µA

T

MIN

to T

MAX

11 ±µA
Input Bias Current Drift (±)8nA/°C
Open-Loop Transimpedance 50 500 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 120 MΩ

–Input 300 Ω

Input Capacitance +Input 1.6 pF
Input Common-Mode Voltage Range 1.5 to 3.5 V
Common-Mode Rejection Ratio VCM = 1.5 V to 3.5 V 48 54 dB

OUTPUT CHARACTERISTICS

Output Voltage Swing 1.1 to 3.9 0.95 to 4.05 V
Output Current R

L

= 50 Ω 10 mA

Short Circuit Current 30 mA

POWER SUPPLY

Quiescent Current 350 425 µA

T

MIN

to T

MAX

475 µA

Power Supply Rejection Ratio VS = +4 V to +6 V 56 66 dB

OPERATING TEMPERATURE RANGE –40 +85 °C

Specifications subject to change without notice.

(@ TA = +25ⴗC, VS = +5 V, RL = 1 k⍀ to 2.5 V unless otherwise noted)

AD8005

–3–

REV. A

AD8005

–4–

REV. A

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Internal Power Dissipation

2

Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . 1.3 Watts

Small Outline Package (R) . . . . . . . . . . . . . . . . . . 0.75 Watts

SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . 0.5 Watts

Input Voltage (Common Mode) . . . . . . . . . . . . . . . ±V

S

± 1V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±3.5 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range

N, R & RT Package . . . . . . . . . . . . . . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma­nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air:
8-Lead Plastic DIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 155°C/W
5-Lead SOT-23 Package: θJA = 240°C/W

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8005 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD8005 is limited by the associated rise in junction tempera­ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-

perature of the plastic, approximately +150°C. Exceeding this

limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.

Exceeding a junction temperature of +175°C for an extended

period can result in device failure.

While the AD8005 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-

perature (+150°C) is not exceeded under all conditions. To

ensure proper operation, it is necessary to observe the maximum
power derating curves shown in Figure 3.

AMBIENT TEMPERATURE – °C

9080

2.0

1.0

0

1.5

0.5

8-LEAD PLASTIC-DIP PACKAGE

–50

TJ = +150°C

MAXIMUM POWER DISSIPATION – Watts

706050403020100–40 –30 –20 –10

8-LEAD SOIC PACKAGE

5-LEAD SOT-23 PACKAGE

Figure 3. Maximum Power Dissipation vs. Temperature

WARNING!

ESD SENSITIVE DEVICE

ORDERING GUIDE

Temperature Package Package Brand

Model Range Description Option Code

AD8005AN –40°C to +85°C 8-Lead Plastic DIP N-8
AD8005AR –40°C to +85°C 8-Lead Plastic SOIC SO-8
AD8005AR-REEL –40°C to +85°C 13" Tape and Reel SO-8
AD8005ART-REEL –40°C to +85°C 13" Tape and Reel RT-5 H1A
AD8005AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8
AD8005ART-REEL7 –40°C to +85°C 7" Tape and Reel RT-5 H1A