Fast throughput rate: 1.5 MSPS
Specified for V
Low power
8 mW max at 1.5 MSPS with 3 V supplies
16 mW max at 1.5 MSPS with 5 V supplies
4 analog input channels with a sequencer
Software configurable analog inputs
4-channel single-ended inputs
2-channel fully differential inputs
2-channel pseudo-differential inputs
Accurate on-chip 2.5 V reference
Wide input bandwidth
70 dB SNR at 50 kHz input frequency
No pipeline delays
High speed parallel interface—word/byte modes
Full shutdown mode: 1 µA max
28 lead TSSOP package
of 2.7 V to 5.25 V
DD
Parallel ADCs with a Sequencer
AD7933/AD7934
FUNCTIONAL BLOCK DIAGRAM
V
AGND
DD
V
REFIN/
REFOUT
VIN0
VIN3
2.5V
VREF
I/P
T/H
MUX
SEQUENCER
PARALLEL INTERFACE/CONTROL REGISTER
DB0 DB11
Figure 1.
AD7933/AD7934
12-/10-BIT
SAR ADC
AND
CONTROL
CSDGNDRD WR W/B
CLKIN
CONVST
BUSY
V
DRIVE
03713-0-001
GENERAL DESCRIPTION
The AD7933/AD7934 are 12-bit and 10-bit, high speed, low
power, successive approximation (SAR) ADCs. The parts
operate from a single 2.7 V to 5.25 V power supply and feature
throughput rates to 1.5 MSPS. The parts contain a low noise,
wide bandwidth, differential track-and-hold amplifier that can
handle input frequencies up to 20 MHz.
The AD7933/AD7934 feature 4 analog input channels with a
channel sequencer to allow a consecutive sequence of channels
to be converted on. These parts can accept either single-ended,
fully differential, or pseudo-differential analog inputs.
The conversion process and data acquisition are controlled
using standard control inputs, which allows for easy interfacing
to microprocessors and DSPs. The input signal is sampled on
the falling edge of
CONVST
at this point.
The AD7933/AD7934 has an accurate on-chip 2.5 V reference
that can be used as the reference source for the analog-to-digital
conversion. Alternatively, this pin can be overdriven to provide
an external reference.
and the conversion is also initiated
These parts use advanced design techniques to achieve very low
power dissipation at high throughput rates. They also feature
flexible power management options. An on-chip control register
allows the user to set up different operating conditions,
including analog input range and configuration, output coding,
power management, and channel sequencing.
PRODUCT HIGHLIGHTS
1. High throughput with low power consumption.
2. Four analog inputs with a channel sequencer.
3. Accurate on-chip 2.5 V reference.
4. Software configurable analog inputs. Single-ended, pseudo-
differential, or fully differential analog inputs that are
software selectable.
5. Single-supply operation with V
function. The V
DRIVE
function allows the parallel interface to connect directly to
3 V, or 5 V processor systems independent of V
DD
6. No pipeline delay.
7. Accurate control of the sampling instant via a
CONVST
input and once off conversion control.
DRIVE
.
PrG
Rev.
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
Second-Order Terms −75 dB typ
Third-Order Terms −75 dB typ
Channel-to-Channel Isolation −75 dB typ
2, 3
20 MHz typ @ 3 dB
Offset Error2 ±4.5 LSB max
Offset Error Match2 ±0.5 LSB max
Gain Error2 ±2 LSB max
Gain Error Match2 ±0.6 LSB max
Positive Gain Error2 ±2 LSB max
Positive Gain Error Match2 ±0.6 LSB max
Zero-Code Error2 ±3 LSB max
Zero-Code Error Match2 ±1 LSB max
Negative Gain Error2 ±2 LSB max
Negative Gain Error Match2 ±0.6 LSB max
or 0 to 2 × V
REF
0 to V
IN+
V
−0.1 to +0.4 V
IN−
V
IN+
IN+
and V
and V
VCM ± V
IN−
VCM ± V
IN−
or 2 × V
REF
/2 V VCM = common-mode voltage4 = V
REF
V VCM = V
REF
V Depending on RANGE bit setting
REF
V Depending on RANGE bit setting
REF
, V
or V
REF
IN+
must remain within GND/VDD
IN−
Input Voltage6 2.5 V ±1% specified performance
Input Impedance 10 kΩ
Output Voltage 2.5 V ±0.1% @ 25°C
Temperature Coefficient 15 ppm/°C typ
Noise 10 µV typ 0.1 Hz to 10 Hz bandwidth
REF
/2
MIN
to
Rev. PrG | Page 3 of 32
AD7933/AD7934 Preliminary Technical Data
Parameter B Version1 Unit Test Conditions/Comments
V
Output Impedance 10 Ω typ
REF
V
Input Capacitance 15 pF typ When in track
REF
25 pF typ When in hold
LOGIC INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, IIN ±1 µA max Typically 10 nA, VIN = 0 V or V
Input Capacitance, C
LOGIC OUTPUTS
Output High Voltage, VOH 2.4 V min I
Output Low Voltage, VOL 0.4 V max I
Floating-State Leakage Current ±10 µA max
Floating-State Output Capacitance5 10 pF max
Output Coding CODING bit = 0
CONVERSION RATE
Conversion Time t2 + 13
Track-and-Hold Acquisition Time 135 ns max Full scale step input
Throughput Rate 1.5 MSPS max
POWER REQUIREMENTS
VDD 2.7/5.25 V min/max
V
2.7 /5.25 V min/max
DRIVE
7
I
Digital I/Ps = 0 V or V
DD
Normal Mode(Static) 0.5 mA typ VDD = 2.7 V to 5.25 V, SCLK on or off
Normal Mode (Operational) 3.2 mA max VDD = 4.75 V to 5.25 V
2.6 mA max VDD = 2.7 V to 3.6 V
Auto StandBy Mode 1.55 mA typ F
90 µA max (Static)
Auto Shutdown Mode 1 mA typ F
1 µA max (Static)
Full Shutdown Mode 1 µA max SCLK on or off
Power Dissipation
Normal Mode (Operational) 16 mW max VDD = 5 V
8 mW max VDD = 3 V
Auto Standby Mode (Static) 450 µW max VDD = 5 V
270 µW max VDD = 3 V
Auto Shutdown Mode (Static) 5 µW max VDD = 5 V
3 µW max VDD = 3 V
Full Shutdown Mode 5 µW max VDD = 5 V
3 µW max VDD = 3 V
1
Temperature range is as follows: B Versions: −40°C to +85°C.
2
See Terminology section.
3
Analog inputs with slew rates exceeding 27 V/µs (full-scale input sine wave >3.5 MHz) within the acquisition time may cause an incorrect conversion result to be
returned by the converter.
4
For full common-mode range see
5
Sample tested during initial release to ensure compliance.
6
This device is operational with an external reference in the range 0.1 V to 3.5 V differential mode and 0.1 V to VDD in pseudo-differential and single-ended modes.
7
Measured with a midscale dc input.
2.4 V min
INH
0.8 V max
INL
5
10 pF max
IN
= 200 µA;
SOURCE
= 200 µA
SINK
Straight (Natural) Binary
Twos Complement CODING bit = 1
+ t20 ns
tclk
= 250 kSPS
SAMPLE
= 250 kSPS
SAMPLE
DRIVE
DRIVE
Rev. PrG | Page 4 of 32
Preliminary Technical Data AD7933/AD7934
AD7934—SPECIFICATIONS
VDD = V
T
MAX
Table 2.
Parameter B Version1 Unit Test Conditions/Comments
DYNAMIC PERFORMANCE FIN = 50 kHz sine wave
Signal-to-Noise + Distortion (SINAD)2 70 dB min
Signal-to-Noise Ratio (SNR)2 70 dB min
Total Harmonic Distortion (THD)2 −75 dB max −80 dB typ
Peak Harmonic or Spurious Noise (SFDR)2 −75 dB max −82 dB typ
Intermodulation Distortion (IMD)2 fa = 40.1 kHz, fb = 51.5 kHz
Aperture Delay2 5 ns typ
Aperture Jitter2 50 ps typ
Full Power Bandwidth
2.5 MHz typ @ 0.1 dB
DC ACCURACY
Resolution 12 Bits
Integral Nonlinearity2 ±1 LSB max
Differential Nonlinearity2 ±0.95 LSB max Guaranteed no missed codes to 12 bits
Total Unadjusted Error TBD LSB max
Single-Ended and Pseudo-Differential Input Straight binary output coding
Single-Ended Input Range 0 to V
Pseudo-Differential Input Range: V
Fully Differential Input Range: V
DC Leakage Current5 ±1 µA max
Input Capacitance 45 pF typ When in track
10 pF typ When in hold
REFERENCE INPUT/OUTPUT
V
REF
DC Leakage Current ±1 µA max
V
REF
V
REFOUT
V
REFOUT
V
REF
130 µV typ 0.1 Hz to 1 MHz bandwidth
= 2.7 V to 5.25 V, Internal/External V
DRIVE
= 2.5 V, unless otherwise noted, F
REF
= 24 MHz, F
CLKIN
= 1.5 MSPS; TA = T
SAMPLE
, unless otherwise noted.
Second-Order Terms −85 dB typ
Third-Order Terms −85 dB typ
Channel-to-Channel Isolation −85 dB typ
2, 3
20 MHz typ @ 3 dB
Offset Error2 ±4.5 LSB max
Offset Error Match2 ±0.5 LSB max
Gain Error2 ±2 LSB max
Gain Error Match2 ±0.6 LSB max
Positive Gain Error2 ±2 LSB max
Positive Gain Error Match2 ±0.6 LSB max
Zero-Code Error2 ±3 LSB max
Zero-Code Error Match2 ±1 LSB max
Negative Gain Error2 ±2 LSB max
Negative Gain Error Match2 ±0.6 LSB max
or 0 to 2 × V
REF
0 to V
IN+
V
−0.1 to +0.4 V
IN−
V
IN+
IN+
and V
and V
VCM ± V
IN−
VCM ± V
IN−
or 2 × V
REF
/2 V VCM = common-mode voltage4 = V
REF
V VCM = V
REF
V Depending on RANGE bit setting
REF
V Depending on RANGE bit setting
REF
, V
or V
REF
IN+
must remain within GND/VDD
IN−
Input Voltage6 2.5 V ±1% specified performance
Input Impedance 10 kΩ typ
Output Voltage 2.5 V ±0.1% @ 25°C
Temperature Coefficient 15 ppm/°C typ
Noise 10 µV typ 0.1 Hz to 10 Hz bandwidth
REF
/2
MIN
to
Rev. PrG | Page 5 of 32
AD7933/AD7934 Preliminary Technical Data
Parameter B Version1 Unit Test Conditions/Comments
V
Output Impedance 10 Ω typ
REF
V
Input Capacitance 15 pF typ When in track-and-hold
REF
25 pF typ When in track-and-hold
LOGIC INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, IIN ±1 µA max Typically 10 nA, VIN = 0 V or V
Input Capacitance, C
LOGIC OUTPUTS
Output High Voltage, VOH 2.4 V min I
Output Low Voltage, VOL 0.4 V max I
Floating-State Leakage Current ±10 µA max
Floating-State Output Capacitance5 10 pF max
Output Coding CODING bit = 0
CONVERSION RATE
Conversion Time t2 + 13
Track-and-Hold Acquisition Time 135 ns max Full scale step input
Throughput Rate 1.5 MSPS max
POWER REQUIREMENTS
VDD 2.7/5.25 V min/max
V
2.7 /5.25 V min/max
DRIVE
7
I
Digital I/Ps = 0 V or V
DD
Normal Mode(Static) 0.5 mA typ VDD = 2.7 V to 5.25 V, SCLK on or off
Normal Mode (Operational) 3.2 mA max VDD = 4.75 V to 5.25 V
2.6 mA max VDD = 2.7 V to 3.6 V
Auto StandBy Mode 1.55 mA typ F
90 µA max (Static)
Auto Shutdown Mode 1 mA typ F
1 µA max (Static)
Full Shutdown Mode 1 µA max SCLK on or off
Power Dissipation
Normal Mode (Operational) 16 mW max VDD = 5 V
8 mW max VDD = 3 V
Auto Standby Mode (Static) 450 µW max VDD = 5 V
270 µW max VDD = 3 V
Auto Shutdown Mode (Static) 5 µW max VDD = 5 V
3 µW max VDD = 3 V
Full Shutdown Mode 5 µW max VDD = 5 V
3 µW max VDD = 3 V
1
Temperature ranges is as follows: B Versions: −40°C to +85°C.
2
See Terminology section.
3
Analog inputs with slew rates exceeding 27 V/µs (full-scale input sine wave > 3.5 MHz) within the acquisition time may cause an incorrect result to be returned by the
converter.
4
For full common mode range see
5
Sample tested during initial release to ensure compliance.
6
This device is operational with an external reference in the range 0.1 V to 3.5 V in differential mode and 0.1 V to VDD in pseudo-differential and single-ended modes.
See the Reference Section for more information.
7
Measured with a midscale dc input.
2.4 V min
INH
0.8 V max
INL
5
10 pF max
IN
= 200 µA;
SOURCE
= 200 µA
SINK
Straight (Natural) Binary
Twos Complement
+ t20 ns
tclk
CODING bit = 1
= 250 kSPS
SAMPLE
= 250 kSPS
SAMPLE
DRIVE
DRIVE
Rev. PrG | Page 6 of 32
Preliminary Technical Data AD7933/AD7934
TIMING SPECIFICATIONS1
VDD = V
T
MAX
Table 3.
Limit at T
Parameter AD7933 AD7934 Unit Description
2
f
CLKIN
24 24
t
QUIET
t1 10 10 ns min
t2 20 20 ns min
t3 TBD TBD ns min CLKIN Falling Edge to BUSY Rising Edge.
t4 0 0 ns min
t5 0 0 ns min
t6 25 25 ns min
t7 10 10 ns min
t8 5 5 ns min
t9 0.5 t
t10 0 0 ns min
t11 0 0 ns min
t12 55 55 ns min
3
t
50 50 ns max
13
4
t
5 5 ns min
14
40 40 ns max
t15 15 15 ns min
t16 5 5 ns min
t17 10 10 ns min Minimum Time between Reads/Writes.
t18 0 0 ns min
t19 5 5 ns min
t20 TBD TBD ns min CLKIN Falling Edge to BUSY Rising Edge.
1
Sample tested during initial release to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of VDD) and timed from a voltage level of 1.6 V.
All timing specifications given above are with a 25 pF load capacitance. See
(W/ = 1) Figure 38 Figure 39Figure 40
2
Mark/space ratio for CLKIN is 40/60 to 60/40.
3
The time required for the output to cross TBD.
4
t14 is derived from the measured time taken by the data outputs to change 0.5 V. The measured number is then extrapolated back to remove the effects of charging or
discharging the 25 pF capacitor. This means that the time, t14, quoted in the timing characteristics is the true bus relinquish time of the part and is independent of the
bus loading.
=2.7 V to 5.25 V, Internal/External V
DRIVE
, unless otherwise noted.
, T
MIN
10 10
MAX
kHz
min
MHz
max
10 10 ns min
0.5 t
CLKIN
, , , and .
ns min New Data Valid before Falling Edge of BUSY.
CLKIN
= 2.5 V, unless otherwise noted, F
REF
= 24 MHz, F
CLKIN
= 1.5 MSPS; TA = T
SAMPLE
MIN
to
Minimum time between end of read and start of next conversion, i.e., time from when the
data bus goes into three-state until the next falling edge of CONVST.
CONVST
CONVST
CS
CS
WR
Data Setup Time before WR
Data Hold after WR
CS
CS
RD
Data Access Time after RD
Bus Relinquish Time after RD
Bus Relinquish Time after RD
HBEN to RD
HBEN to RD
HBEN to WR
HBEN to WR
Pulse Width.
Falling Edge to CLKIN Falling Edge Setup Time.
to WR Setup Time.
to WR Hold Time.
Pulse Width.
.
.
to RD Setup Time.
to RD Hold Time.
Pulse Width.
.
.
.
Setup Time.
Hold Time.
Setup Time.
Hold Time.
Figure 37. AD7933/AD7934 Parallel Interface—Conversion and Read Cycle in Word Mode
Rev. PrG | Page 7 of 32
AD7933/AD7934 Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
T
= 25°C, unless otherwise noted.
A
Table 4.
Parameter Rating
VDD to AGND/DGND −0.3 V to +7 V
V
to AGND/DGND −0.3 V to VDD +0.3 V
DRIVE
Analog Input Voltage to AGND −0.3 V to VDD + 0.3 V
Digital Input Voltage to DGND −0.3 V to +7 V
V
to VDD −0.3 V to VDD + 0.3 V
DRIVE
Digital Output Voltage to AGND −0.3 V to V
V
to AGND −0.3 V to VDD + 0.3 V
REFIN
DRIVE
+ 0.3 V
AGND to DGND −0.3 V to +0.3 V
Input Current to Any Pin Except Supplies1 ±10 mA
Operating Temperature Range
Commercial (B Version) −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Junction Temperature 150°C
θJA Thermal Impedance 97.9°C/W (TSSOP)
θJC Thermal Impedance 14°C/W (TSSOP)
Lead Temperature, Soldering
Reflow Temperature (10 sec to 30 sec) 255°C
ESD 2 kV
1
Transient currents of up to 100 mA will not cause SCR latch-up.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. PrG | Page 8 of 32
Preliminary Technical Data AD7933/AD7934
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Table 5. Pin Function Description
Pin No. Mnemonic Description
1 VDD
Power Supply Input. The V
decoupled to AGND with a 0.1 µF capacitor and a 10 µF tantalum capacitor.
2
Word/Byte Input. When this input is logic high, word transfer mode is enabled and data is transferred to and
W/B
from the AD7933/AD7934 in 12-/10-bit words on Pins DB0/DB2 to DB11. When this pin is logic low, byte
transfer mode is enabled. Data and the channel ID is transferred on Pins DB0 to DB7 and Pin DB8/HBEN
assumes its HBEN functionality.
3 to 10 DB0 to DB7
Data Bits 0 to 7. Three-state parallel digital I/O pins that provide the conversion result and also allow the
control register to be programmed. These pins are controlled by CS, RD, and WR. The logic high/low voltage
levels for these pins are determined by the V
DB1) are always 0 and the LSB of the conversion result is available on DB2.
11 V
DRIVE
Logic Power Supply Input. The voltage supplied at this pin determines at what voltage the parallel interface of
the AD7933/AD7934 will operate. This pin should be decoupled to DGND. The voltage at this pin may be
different to that at V
12 DGND
Digital Ground. This is the ground reference point for all digital circuitry on the AD7933/AD7934. The DGND
and AGND voltages should ideally be at the same potential and must not be more than 0.3 V apart, even on a
transient basis.
13 DB8/HBEN
Data Bit 8/High Byte Enable. When W/B
, RD, and WR. When W/B is low, this pin acts as the high byte enable pin. When HBEN is low, the low byte
by CS
of data written to or read from the AD7933/AD7934 is on DB0 to DB7. When HBEN is high, the top four bits of
the data being written to or read from the AD7933/AD7934 are on DB0 to DB3 When reading from the device,
DB4 of the high byte is always 0 and DB5 and DB6 will contain the ID of the channel for which the conversion
result corresponds (see Channel Address Bits in Table 9). When writing to the device, DB4 to DB7 of the high
byte must be all 0s. Note that when reading from the AD7933, the two LSBs in the low byte are 0s and the
remaining 6 bits, conversion data.
14 to 16 DB9 to DB11
Data Bits 9 to 11. Three-state parallel digital I/O pins that provide the conversion result and also allow the
control register to be programmed in word mode. These pins are controlled by CS, RD, and WR. The logic
high/low voltage levels for these pins are determined by the V
17 BUSY
Busy Output. Logic output indicating the status of the conversion. The BUSY output goes high following the
falling edge of CONVST and stays high for the duration of the conversion. Once the conversion is complete and
the result is available in the output register, the BUSY output will go low. The track-and-hold returns to track
mode just prior to the falling edge of BUSY, and the acquisition time for the part begins when BUSY goes low.
18 CLKIN
Master Clock Input. The clock source for the conversion process is applied to this pin. Conversion time for the
AD7933/AD7934 takes 13.5 clock cycles. The frequency of the master clock input therefore determines the
conversion time and achievable throughput rate.
19
CONVST
Conversion Start Input. A falling edge on CONVST is used to initiate a conversion. The track-and-hold goes from
track to hold mode on the falling edge of CONVST
Following power-down, when operating in the auto shutdown or auto standby mode, a rising edge on
CONVST
is used to power up the device.
1
V
DD
2
W/B
3
DB0
4
DB1
DB2
DB3
DB4
DB5
DB6
DB7
V
DRIVE
DGND
DB8/HBENDB11
DB9
5
6
(Not to Scale)
7
8
9
10
11
12
13
14
AD7933/
AD7934
TOP VIEW
28
VIN3
27
VIN2
26
VIN1
25
V
IN
24
V
REFIN/VREFOUT
23
AGND
22
CS
21
RD
20
WR
19
CONVST
18
CLKIN
17
BUSY
16
15
DB10
0
03713-0-006
Figure 2. Pin Configuration
range for the AD7933/AD7934 is from 2.7 V to 5.25 V. The supply should be
DD
input. When reading from the AD7933, the two LSBs (DB0 and
DRIVE
but should never exceed VDD by more than 0.3 V.
DD
is high, this pin acts as Data Bit 8, a three-state I/O pin that is controlled
DRIVE
and the conversion process is initiated at this point.
input.
Rev. PrG | Page 9 of 32
AD7933/AD7934 Preliminary Technical Data
Pin No. Mnemonic Description
20
21
22
23 AGND
24 V
25 to 28 VIN0 to VIN3
Write Input. Active low logic input used in conjunction with CS to write data to the control register.
WR
Read Input. Active low logic input used in conjunction with CS to access the conversion result. The conversion
RD
result is placed on the data bus following the falling edge of RD
Chip Select. Active low logic input used in conjunction with RD and WR to read conversion data or write data to
CS
read while CS is low.
the control register.
Analog Ground. This is the ground reference point for all analog circuitry on the AD7933/AD7934. All analog
input signals and any external reference signal should be referred to this AGND voltage. The AGND and DGND
voltages should ideally be at the same potential and must not be more than 0.3 V apart, even on a transient
basis.
REFIN/VREFOUT
Reference Input/Output. This pin is connected to the internal reference and is the reference source for the ADC.
The nominal internal reference voltage is 2.5 V and this appears at this pin. This pin can be overdriven by an
external reference. The input voltage range for the external reference is 0.1 V to 3.5 V for differential mode and
is 0.1 V to V
in single-ended and pseudo-differential mode, depending on VDD.
DD
Analog Input 0 to Analog Input 3. Four analog input channels that are multiplexed into the on-chip track-andhold. The analog inputs can be programmed to be four single ended inputs, two fully differential pairs or two
pseudo-differential pairs by setting the MODE bits in the control register appropriately (see Table 9). The
analog input channel to be converted can either be selected by writing to the address bits (ADD1 and ADD0) in
the control register prior to the conversion, or the on-chip sequencer can be used. The input range for all input
channels can either be 0 V to V
or 0 V to 2 × V
REF
and the coding can be binary or twos complement,
REF
depending on the states of the RANGE and CODING bits in the control register. Any unsed input channels
should be connected to AGND to avoid noise pickup.
Rev. PrG | Page 10 of 32
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