Analog Devices AD7886JD, AD7886BD, AD7886TD, AD7886KP, AD7886KD Datasheet

...
LC2MOS
a
12-Bit, 750 kHz/1 MHz, Sampling ADC
FEATURES 750 kHz/1 MHz Throughput Rate 1 ms/750 ns Conversion Time 12-Bit No Missed Codes Over Temperature 67 dB SNR at 100 kHz Input Frequency Low Power—250 mW typ Fast Bus Access Time—57 ns max
APPLICATIONS Digital Signal Processing Speech Recognition and Synthesis Spectrum Analysis DSP Servo Control
GENERAL DESCRIPTION
The AD7886 is a 12-bit ADC with a sample-and-hold amplifier offering high speed performance combined with low power dissi­pation. The AD7886 is a triple pass flash ADC that uses 15 comparators in a 4-bit flash technique to achieve 12-bit accuracy in 1 µs/750 ns conversion time. An on-chip clock oscillator pro- vides the appropriate timing for each of the three conversion stages, eliminating the need for any external clocks. Acquisition time of the sample-and-hold amplifier gives a resulting through­put rate of 750 kHz/1 MHz.*
The AD7886 operates from ±5 V power supplies. Pin-strappable inputs offer a choice of three analog input ranges: 0 V to 5 V, 0 V to 10 V or ±5 V.
In addition to the traditional dc accuracy specifications such as linearity, offset and full-scale errors, the AD7886 is also speci­fied for dynamic performance parameters, including harmonic distortion and signal-to-noise ratio.
The AD7886 has a high speed digital interface with three-state data outputs. Conversion control is provided by a put. Data access is controlled by
CS and RD inputs, standard
CONVST in-
microprocessor signals. The data access time of less than 57 ns means that the AD7886 can interface directly to most modern microprocessors, including DSP processors.
*Contact your local salesperson for further information on the 1 MHz
version.
AD7886

FUNCTIONAL BLOCK DIAGRAM

V
DD
R3
R4
R1 9k
R2
6.3k
4096
RESISTOR
DAC
R5
OSCILLATOR
– +
T/H
COMPARATORS
4-BIT FLASH
SEGMENT SELECT
CLOCK
15
AND
LOGIC
VIN1
VIN2
+5REF
SUM
V
REF
AGND
10k 3.5k
10k
The AD7886 is fabricated in Analog Devices’ Linear Com­patible CMOS process, a mixed technology process that combines precision bipolar circuits with low power CMOS logic.
The AD7886 is available in both a 28-pin DIP and a 28-pin leaded chip carrier.

PRODUCT HIGHLIGHTS

1. Fast 1.33 µs/1 µs Throughput Time.
Fast throughput time makes the AD7886 suitable for a wide range of data acquisition applications.
2. Dynamic Specifications for DSP Users. The AD7886 is specified for ac parameters, including signal-to-noise ratio, harmonic distortion and inter­modulation distortion. Key digital timing parameters are also tested and guaranteed over the full operating tem­perature range.
3. Fast Microprocessor Interface. Standard control signals,
CS and RD, and fast bus ac­cess times make the AD7886 easy to interface to micro­processors.
4. Low Power.
2
LC
MOS fabrication process gives low power dissipa-
tion of 250 mW.
CS RD CONVST
CONTROL
TIMER
4-BIT
LATCH
4-BIT
LATCH
4-BIT
LATCH
THREE STATE
OUTPUTS
AD7886
V
DGND
SS
BUSY
DB11
DB0
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 World Wide Web Site: http://www.analog.com Fax: 617/326-8703 © Analog Devices, Inc., 1997
AD7886–SPECIFICATIONS
as shown in Figure 2. All Specifications T
MIN
to T
unless otherwise noted. Specifications apply for 750 kHz version.)
MAX
(VDD = +5 V 6 5%, VSS = –5 V 6 5%, A6ND = DGND = O V, V
= –3.5 V, connected
REF
Parameter J Version1K, B Versions1T Version1Units Test Conditions/Comments
DYNAMIC PERFORMANCE
Signal-to-Noise Ratio3 (SNR) 65 67 65 dB min VIN = 100 kHz Sine Wave, f Total Harmonic Distortion (THD) –75 –75 –75 dB typ VIN = 100 kHz Sine Wave, f Peak Harmonic or Spurious Noise –77 –77 –77 dB typ VIN = 100 kHz Sine Wave, f
2
SAMPLE
SAMPLE
SAMPLE
Intermodulation Distortion (IMD) Second Order Terms –80 –80 –80 dB typ fa = 96 kHz, fb = 103 kHz, f
SAMPLE
= 750 kHz
Third Order Terms –80 –80 –80 dB typ
ACCURACY
Resolution 12 12 12 Bits Integral Linearity T
MIN
to T
MAX
±2 ±2 LSB max
Minimum Resolution for Which
No Missing Codes Are Guaranteed 12 12 12 Bits
Unipolar Offset Error @ +25°C ±5 ±5 ±5 LSB max Input Range: 0 V to 5 V or 0 V to 10 V
T
MIN
to T
MAX
±5 ±5 ±5 LSB max
Bipolar Offset Error @ +25°C ±5 ±5 ±5 LSB max Input Range: ± 5 V
T
MIN
to T
MAX
±5 ±5 ±5 LSB max
Unipolar Gain Error @ +25°C ±5 ±5 ±5 LSB max Input Range: 0 V to 5 V or 0 V to 10 V
T
MIN
to T
MAX
±5 ±5 ±5 LSB max
Bipolar Gain Error @ +25°C ±5 ±5 ±5 LSB max Input Range: ± 5 V
T
MIN
to T
MAX
±5+5 ±5 LSB max
ANALOG INPUT
Unipolar Input Current 1.5 1.5 1.5 mA max Input Ranges: 0 V to 5 V or 0 V to 10 V Bipolar Input Current ±0.75 ±0.75 ±0.75 mA max Input Range: ±5 V
= 750 kHz = 750 kHz = 750 kHz
REFERENCE INPUT
V
REF
–3.5 –3.5 –3.5 Volts ± 2% For Specified Performance
Input Reference Current –10 –10 –10 mA max R1, Resistance 9 9 9 k nom ±25% R2, Resistance 6.3 6.3 6.3 k nom ±25% R2/R1 Ratio 0.7 0.7 0.7 nom ±0.1%
POWER SUPPLY REJECTION
VDD Only, (FS Change) 0.5 0.5 0.5 LSB typ VSS = –5 V, VDD = +4.75 V to +5.25 V VSS Only, (FS Change) 0.5 0.5 0.5 LSB typ VDD = +5 V, VSS = –4.75 V to –5.25 V
LOGIC INPUTS
Input High Voltage, V Input Low Voltage, V Input Current, I Input Capacitance, C
INH
INL
IN
4
IN
LOGIC OUTPUTS
DB11–DB0, BUSY
Output High Voltage, V Output Low Voltage, V
OH
OL
DB11–DB0
Floating-State Leakage Current ±10 ±10 ±10 pA max Floating-State Output Capacitance415 15 15 pF max
POWER REQUIREMENTS
V
DD
V
SS
I
DD
I
SS
Power Dissipation 250 250 250 mW typ CONVST = CS = RD = V
NOTES
I
Temperature ranges are as follows: J, K Versions: 0°C to +70°C; B Version: –40°C to +85°C; T Version: –55°C to + 125°C.
2
Applies to all three input ranges, VIN = 0 to FS, pk-to-pk V.
3
SNR calculation includes distortion and noise components.
4
Sample tested @ +25°C to ensure compliance.
Specifications subject to change without notice.
2.4 2.4 2.4 V min VDD = 5 V ± 5%
0.8 0.8 0.8 V max VDD = 5 V ± 5% ±10 ±10 ±10 µA max VIN = 0 V to V
DD
10 10 10 pF max
4 4 4 V min I
0.4 0.4 0.4 V max I
SOURCE
= 1.6 mA
SINK
= 200 µA
+5 +5 +5 V nom ±5% for Specified Performance –5 –5 –5 V nom ±5% for Specified Performance 35 35 35 mA max Typically 25 mA, CONVST = CS = RD = V –35 –35 –35 mA max Typically 25 mA, CONVST = CS = RD = V
350 350 350 mW max
DD
DD
DD
–2–
REV. B
1
WARNING!
ESD SENSITIVE DEVICE

TIMING CHARACTERISTICS

(VDD = +5 V 6 5%, VSS = –5 V 6 5%, AGND = DGND = 0 V)
Limit at Limit at Limit at T
MIN
, T
MAX
T
MIN
, T
MAX
T
, T
MIN
MAX
Parameter (J, K Versions) (B Version) (T Version) Units Conditions/Comments
AD7886
t
1
50 50 50 ns min CONVST Pulse Width 1 1 1 Fs max
t
2
t
3
t
4
t
5
t
6
3
t
7
0 0 0 ns min CS to RD Setup Time 0 0 0 ns min CS to RD Hold Time 60 60 75 ns min RD Pulse Width 100 100 100 ns max CONVST to BUSY Propagation Delay, (CL = 10 pF)
57 57 70 ns max Data Access Time After RD 10 10 10 ns min Bus Relinquish Time After RD 50 50 60 ns max
t
8
3
t
9
20 20 14 ns min Data Setup Time Prior to BUSY, (CL = 20 pF) 10 10 0 ns min Data Setup Time Prior to
BUSY, (CL = 100 pF) 10 10 10 ns min Bus Relinquish Time After CONVST 100 100 100 ns max
t
10
t
11
t
12
t
13
t
CONV
0 0 0 ns min CS High to CONVST Low 0 0 0 ns min BUSY High to RD Low 250 250 250 ns typ BUSY High to CONVST Low, SHA Acquisition Time
1.333 1.333 1.333 µs min Sampling Interval 950 950 950 ns typ Conversion Time 1000 1000 1000 ns max
NOTES
1
Timing specifications in bold print are 100% production tested. All other times are sample tested at +25°C to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V.
2
t6 is measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V.
3
t7 and t9 are derived from the measured time taken by the data outputs to change by 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapo­lated back to remove the effects of charging or discharging the load capacitor, C relinquish times of the part and as such are independent of external bus loading capacitances.
Specifications subject to change without notice.
. This means that the times, t7 and t9, quoted in the timing characteristics are the true bus
L
Figure 1. Load Circuit for Bus Access and Relinquish Time

ABSOLUTE MAXIMUM RATINGS

(T V
DD
V
SS
AGND to DGND . . . . . . . . . . . . . . . . . –0.3 V to V
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD7886 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. B
I
OL
TO OUTPUT
PIN
= +25°C unless otherwise noted)
A
C
L
1, 2
I
OH
+2.1V
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –7 V
+0.3 V
DD
VIN1, VIN2, SUM, +5REF to AGND . . . . . . –15 V to +15 V
V
to AGND . . . . . . . . . . . . . . . . VSS –0.3 V to V
REF
DD
+0.3 V
Digital Inputs to DGND
CS, RD, CONVST . . . . . . . . . . . . . . –0.3 V to V
+0.3 V
DD
Digital Outputs to DGND
DB0 to DB11, BUSY . . . . . . . . . . . . . –0.3 V to V
+0.3 V
DD
Operating Temperature Range
Commercial (J, K Versions) . . . . . . . . . . . . . . 0°C to +70°C
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Extended (T Version) . . . . . . . . . . . . . . . –55°C to +125°C
Storage Temperature Range . . . . . . . . . . . .–65°C to + 150°C
Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . .+300°C
Power Dissipation (Any Package) to +75°C . . . . . . 1000 mW
Derates above +75°C by . . . . . . . . . . . . . . . . . . . . 10 mW/°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
If VSS is open circuited with VDD and AGND applied, the VSS pin will be pulled positive, exceeding the Absolute Maximum Ratings. If this possibility exists, a Schottky diode from VSS to DGND (cathode end to GND) ensures that the
–3–
AD7886

ORDERING GUIDE

Integral
1, 2
Model
AD7886JD 0°C to +70°C 65 D-28 AD7886KD 0°C to +70°C67±2.0 D-28 AD7886JP 0°C to +70°C 65 P-28A AD7886KP 0°C to +70°C67±2.0 P-28A AD7886BD –40°C to +85°C67 ±2.0 D-28 AD7886TD –55°C to +125°C65 ±2.0 D-28
NOTES 1Contact your sales office for availability of AD7886BD, AD7886TD and 1 MHz version.
2
Analog Devices reserves the right to ship J-Leaded Ceramic Chip Carrier (JLCCC) in lieu of PLCC packages.
3
D = Ceramic DIP; P = Plastic Leaded Chip Carrier.
DIP Pin Number Mnemonic Description
Power Supply
10 & 19 V 15 & 24 V
DD
SS
Positive Power Supply, +5 V ± 5%. Both V Negative Power Supply, –5 V ± 5%. Both V
16 & 23 AGND Analog Ground. Both AGND pins must be tied together. 5 DGND Digital Ground.
Temperature SNR Nonlinearity Package Range (dBs) (LSBs) Option

PIN FUNCTION DESCRIPTION

pins must be tied together.
DD
pins must be tied together.
SS
3
2 2
Analog and Reference Inputs
17 & 18 VIN Analog Inputs, VIN1 and VIN2. The part can be pin strapped for any one of three analog input ranges;
Range Pin Strap Signal Input
0 V to 5 V Connect VIN2 to VIN1 VIN1 & VIN2 0 V to 10 V Connect VIN2 to GND VIN1 ±5 V Connect VIN2 to +5 V VIN1
20 +5REF +5 V Reference input. This input is used in conjunction with SUM and V
inputs to scale an external
REF
+5 V reference to –3.5 V, the required reference for the part (see Figure 2).
21 SUM Summing Point. This input is used in conjunction with +5REF and V
inputs to scale an external
REF
+5 V reference to –3.5 V, the required reference for the part (see Figure 2).
22 V
REF
Voltage Reference Input. The AD7886 is specified with V
REF
= –3.5 V.
Interface and Control
1–4, DB7–DB4 Three-state data outputs. 6–9, DB3–DB0 These outputs are controlled by
CS and RD. DB11 is the Most Significant Bit (MSB). 25–28 DB11–DB8 11 12 13
BUSY BUSY Output indicates converter status. BUSY is low during conversion. CS Chip Select Input. The device is selected when this input is low. RD Read Input. This active low signal, in conjunction with CS, is used to enable the output data three-state
drivers.
14 CONVST Conversion Start Input. This input is used to start conversion.
–4–
REV. B
PIN CONFIGURATIONS
AGND
VIN1
VIN2
DB4
DB5
DB6
DB11
DB10
DB9
DB8
DB7
AGND
SUM +5REF
DB2 DB1 DB0
DGND
DB3
V
SS
V
REF
V
DD
CS
RD
CONVST
V
SS
V
DD
BUSY
AD7886
TOP VIEW
(Not to Scale)
5 6
7 8 9
10 11
28 27 2612
3
4
25 24 23 22
21 20
19
12
13 14 15 16 17 18
AD7886
DIP
DB7 DB6 DB5 DB4
DGND
DB3 DB2 DB1 DB0 V
DD
BUSY
CS
RD
CONVST
1 2 3 4 5 6 7 8 9
10
11 12 13 14
AD7886
TOP VIEW
(Not to Scale)
28 27 26 25 24 23 22 21 20 19 18 17 16 15
DB8 DB9 DB10 DB11 V
SS
AGND V
REF
SUM +5REF V
DD
VIN2 VIN1 AGND V
SS

TERMINOLOGY

Unipolar Offset Error
The ideal first code transition should occur when the analog input is 1 LSB above AGND. The deviation of the actual transi­tion from that point is termed the offset error.
Bipolar Zero Error
The ideal midscale transition (i.e., 0111 1111 1111 to 1000 0000 0000) for the +5 V range should occur when the analog input is at zero volts. Bipolar zero error is the deviation of the actual transition from that point.
Gain Error
In the unipolar mode, gain error is measured with respect to the first and last code transition points. The ideal difference be­tween these points is FS–2 LSBs. For bipolar applications, the gain error is measured from the midscale transition to both the first and last code transitions. The ideal difference in this case is FS/2–1 LSB. The gain error is defined as the deviation between the ideal difference, given above, and the measured difference. For the bipolar case, there are two gain errors; the figure in the specification page represents the worst case. Ideal FS depends on the +5REF input; for the 0 V to 5 V input, ideal FS = +5REF and for the 0 V to 10 V and +5 V ranges, ideal FS = 2 × + 5REF.

CONVERTER DETAILS

The AD7886 is a triple-pass flash ADC that uses 15 compara­tors in a 4-bit flash technique to perform the 12-bit conversion procedure. Each of the 4096 quantization levels is realized inter­nally with a precision resistor DAC.
The fifteen comparators first compare the analog input voltage to the V four most significant bits and selects 1 out of 16 voltage seg­ments. The comparators are then switched to 15 subvoltages on that segment to determine the next four bits and select 1 out of
/16 voltages of the resistor array. This determines the
REF
256 voltage segments. A further switching of the comparators to another 15 subvoltages produces the complete 12-bit conversion
REV. B
PLCC
result. The 12 bits of data are then stored internally in a three­state output latch.

REFERENCE INPUT

The AD7886 operates from a 3.5 V reference, which must be provided at the V
input. Two on-chip resistors for use with
REF
an external amplifier can be used for deriving 3.5 V from stan­dard 5 V references. Figure 2 shows an example with the AD586 which a is a high performance voltage reference exhibiting excellent stability performance, 5 ppm/°C max. The external amplifier serves a second function of force/sensing the V
REF
input. Force/sensing minimizes error contributions from
+V
+V
AD586
GND
IN
+5V
V
OUT
AD707
–3.5V
+5REF
SUM
V
REF
R1 9k
R2
6.3k
AD7886*
+
TO DAC
C1
10µF
C2
0.1µF
AGND
*ADDITIONAL PINS OMITTED FOR CLARITY
Figure 2. Typical Reference Circuitry
–5–
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