Analog Devices AD7886JD, AD7886BD, AD7886TD, AD7886KP, AD7886KD, AD7886JP Datasheet
LC2MOS
a
12-Bit, 750 kHz/1 MHz, Sampling ADC
FEATURES
750 kHz/1 MHz Throughput Rate
1 ms/750 ns Conversion Time
12-Bit No Missed Codes Over Temperature
67 dB SNR at 100 kHz Input Frequency
Low Power—250 mW typ
Fast Bus Access Time—57 ns max
APPLICATIONS
Digital Signal Processing
Speech Recognition and Synthesis
Spectrum Analysis
DSP Servo Control
GENERAL DESCRIPTION
The AD7886 is a 12-bit ADC with a sample-and-hold amplifier
offering high speed performance combined with low power dissipation. The AD7886 is a triple pass flash ADC that uses 15
comparators in a 4-bit flash technique to achieve 12-bit accuracy
in 1 µs/750 ns conversion time. An on-chip clock oscillator pro-
vides the appropriate timing for each of the three conversion
stages, eliminating the need for any external clocks. Acquisition
time of the sample-and-hold amplifier gives a resulting throughput rate of 750 kHz/1 MHz.*
The AD7886 operates from ±5 V power supplies. Pin-strappable
inputs offer a choice of three analog input ranges: 0 V to 5 V,
0 V to 10 V or ±5 V.
In addition to the traditional dc accuracy specifications such as
linearity, offset and full-scale errors, the AD7886 is also specified for dynamic performance parameters, including harmonic
distortion and signal-to-noise ratio.
The AD7886 has a high speed digital interface with three-state
data outputs. Conversion control is provided by a
put. Data access is controlled by
CS and RD inputs, standard
CONVST in-
microprocessor signals. The data access time of less than 57 ns
means that the AD7886 can interface directly to most modern
microprocessors, including DSP processors.
*Contact your local salesperson for further information on the 1 MHz
version.
AD7886
FUNCTIONAL BLOCK DIAGRAM
V
DD
R3
R4
R1
9k
R2
6.3k
4096
RESISTOR
DAC
R5
OSCILLATOR
–
+
AND TIMER
T/H
COMPARATORS
4-BIT FLASH
SEGMENT SELECT
CLOCK
15
AND
LOGIC
VIN1
VIN2
+5REF
SUM
V
REF
AGND
10k3.5k
10k
The AD7886 is fabricated in Analog Devices’ Linear Compatible CMOS process, a mixed technology process that
combines precision bipolar circuits with low power CMOS
logic.
The AD7886 is available in both a 28-pin DIP and a 28-pin
leaded chip carrier.
PRODUCT HIGHLIGHTS
1. Fast 1.33 µs/1 µs Throughput Time.
Fast throughput time makes the AD7886 suitable for a
wide range of data acquisition applications.
2. Dynamic Specifications for DSP Users.
The AD7886 is specified for ac parameters, including
signal-to-noise ratio, harmonic distortion and intermodulation distortion. Key digital timing parameters are
also tested and guaranteed over the full operating temperature range.
3. Fast Microprocessor Interface.
Standard control signals,
CS and RD, and fast bus access times make the AD7886 easy to interface to microprocessors.
4. Low Power.
2
LC
MOS fabrication process gives low power dissipa-
tion of 250 mW.
CSRD CONVST
CONTROL
TIMER
4-BIT
LATCH
4-BIT
LATCH
4-BIT
LATCH
THREE
STATE
OUTPUTS
AD7886
V
DGND
SS
BUSY
DB11
DB0
REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
unless otherwise noted. Specifications apply for 750 kHz version.)
MAX
(VDD = +5 V 6 5%, VSS = –5 V 6 5%, A6ND = DGND = O V, V
= –3.5 V, connected
REF
ParameterJ Version1K, B Versions1T Version1UnitsTest Conditions/Comments
DYNAMIC PERFORMANCE
Signal-to-Noise Ratio3 (SNR)656765dB minVIN = 100 kHz Sine Wave, f
Total Harmonic Distortion (THD)–75–75–75dB typVIN = 100 kHz Sine Wave, f
Peak Harmonic or Spurious Noise–77–77–77dB typVIN = 100 kHz Sine Wave, f
2
SAMPLE
SAMPLE
SAMPLE
Intermodulation Distortion (IMD)
Second Order Terms–80–80–80dB typfa = 96 kHz, fb = 103 kHz, f
SAMPLE
= 750 kHz
Third Order Terms–80–80–80dB typ
ACCURACY
Resolution121212Bits
Integral Linearity T
MIN
to T
MAX
±2±2LSB max
Minimum Resolution for Which
No Missing Codes Are Guaranteed121212Bits
Unipolar Offset Error @ +25°C±5±5±5LSB maxInput Range: 0 V to 5 V or 0 V to 10 V
T
MIN
to T
MAX
±5±5±5LSB max
Bipolar Offset Error @ +25°C±5±5±5LSB maxInput Range: ± 5 V
T
MIN
to T
MAX
±5±5±5LSB max
Unipolar Gain Error @ +25°C±5±5±5LSB maxInput Range: 0 V to 5 V or 0 V to 10 V
T
MIN
to T
MAX
±5±5±5LSB max
Bipolar Gain Error @ +25°C±5±5±5LSB maxInput Range: ± 5 V
T
MIN
to T
MAX
±5+5±5LSB max
ANALOG INPUT
Unipolar Input Current1.51.51.5mA maxInput Ranges: 0 V to 5 V or 0 V to 10 V
Bipolar Input Current±0.75±0.75±0.75mA maxInput Range: ±5 V
VDD Only, (FS Change)0.50.50.5LSB typVSS = –5 V, VDD = +4.75 V to +5.25 V
VSS Only, (FS Change)0.50.50.5LSB typVDD = +5 V, VSS = –4.75 V to –5.25 V
LOGIC INPUTS
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Input Capacitance, C
INH
INL
IN
4
IN
LOGIC OUTPUTS
DB11–DB0, BUSY
Output High Voltage, V
Output Low Voltage, V
OH
OL
DB11–DB0
Floating-State Leakage Current±10±10±10pA max
Floating-State Output Capacitance4151515pF max
POWER REQUIREMENTS
V
DD
V
SS
I
DD
I
SS
Power Dissipation250250250mW typCONVST = CS = RD = V
NOTES
I
Temperature ranges are as follows: J, K Versions: 0°C to +70°C; B Version: –40°C to +85°C; T Version: –55°C to + 125°C.
2
Applies to all three input ranges, VIN = 0 to FS, pk-to-pk V.
3
SNR calculation includes distortion and noise components.
4
Sample tested @ +25°C to ensure compliance.
Specifications subject to change without notice.
2.42.42.4V minVDD = 5 V ± 5%
0.80.80.8V maxVDD = 5 V ± 5%
±10±10±10µA maxVIN = 0 V to V
DD
101010pF max
444V minI
0.40.40.4V maxI
SOURCE
= 1.6 mA
SINK
= 200 µA
+5+5+5V nom±5% for Specified Performance
–5–5–5V nom±5% for Specified Performance
353535mA maxTypically 25 mA, CONVST = CS = RD = V
–35–35–35mA maxTypically 25 mA, CONVST = CS = RD = V
350350350mW max
DD
DD
DD
–2–
REV. B
1
WARNING!
ESD SENSITIVE DEVICE
TIMING CHARACTERISTICS
(VDD = +5 V 6 5%, VSS = –5 V 6 5%, AGND = DGND = 0 V)
Limit atLimit atLimit at
T
MIN
, T
MAX
T
MIN
, T
MAX
T
, T
MIN
MAX
Parameter(J, K Versions) (B Version)(T Version)UnitsConditions/Comments
AD7886
t
1
505050ns min CONVST Pulse Width
111Fs max
t
2
t
3
t
4
t
5
t
6
3
t
7
000ns min CS to RD Setup Time
000ns min CS to RD Hold Time
606075ns min RD Pulse Width
100100100ns max CONVST to BUSY Propagation Delay, (CL = 10 pF)
575770ns max Data Access Time After RD
101010ns min Bus Relinquish Time After RD
505060ns max
t
8
3
t
9
202014ns min Data Setup Time Prior to BUSY, (CL = 20 pF)
10100ns min Data Setup Time Prior to
BUSY, (CL = 100 pF)
101010ns min Bus Relinquish Time After CONVST
100100100ns max
t
10
t
11
t
12
t
13
t
CONV
000ns min CS High to CONVST Low
000ns min BUSY High to RD Low
250250250ns typBUSY High to CONVST Low, SHA Acquisition Time
1.3331.3331.333µs min Sampling Interval
950950950ns typConversion Time
100010001000ns max
NOTES
1
Timing specifications in bold print are 100% production tested. All other times are sample tested at +25°C to ensure compliance. All input signals are specified with tr =
tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V.
2
t6 is measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V.
3
t7 and t9 are derived from the measured time taken by the data outputs to change by 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated back to remove the effects of charging or discharging the load capacitor, C
relinquish times of the part and as such are independent of external bus loading capacitances.
Specifications subject to change without notice.
. This means that the times, t7 and t9, quoted in the timing characteristics are the true bus
L
Figure 1. Load Circuit for Bus Access and Relinquish Time
ABSOLUTE MAXIMUM RATINGS
(T
V
DD
V
SS
AGND to DGND . . . . . . . . . . . . . . . . . –0.3 V to V
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD7886 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. B
I
OL
TO OUTPUT
PIN
= +25°C unless otherwise noted)
A
C
L
1, 2
I
OH
+2.1V
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
to AGND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –7 V
+0.3 V
DD
VIN1, VIN2, SUM, +5REF to AGND . . . . . . –15 V to +15 V
V
to AGND . . . . . . . . . . . . . . . . VSS –0.3 V to V
REF
DD
+0.3 V
Digital Inputs to DGND
CS, RD, CONVST . . . . . . . . . . . . . . –0.3 V to V
+0.3 V
DD
Digital Outputs to DGND
DB0 to DB11, BUSY . . . . . . . . . . . . . –0.3 V to V
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation
of the device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
If VSS is open circuited with VDD and AGND applied, the VSS pin will be pulled
positive, exceeding the Absolute Maximum Ratings. If this possibility exists, a
Schottky diode from VSS to DGND (cathode end to GND) ensures that the
–3–
AD7886
ORDERING GUIDE
Integral
1, 2
Model
AD7886JD0°C to +70°C65D-28
AD7886KD0°C to +70°C67±2.0D-28
AD7886JP0°C to +70°C65P-28A
AD7886KP0°C to +70°C67±2.0P-28A
AD7886BD–40°C to +85°C67 ±2.0D-28
AD7886TD–55°C to +125°C65±2.0D-28
NOTES
1Contact your sales office for availability of AD7886BD, AD7886TD and 1 MHz version.
2
Analog Devices reserves the right to ship J-Leaded Ceramic Chip Carrier (JLCCC) in lieu of PLCC packages.
3
D = Ceramic DIP; P = Plastic Leaded Chip Carrier.
DIP Pin
NumberMnemonicDescription
Power Supply
10 & 19V
15 & 24V
DD
SS
Positive Power Supply, +5 V ± 5%. Both V
Negative Power Supply, –5 V ± 5%. Both V
16 & 23AGNDAnalog Ground. Both AGND pins must be tied together.
5DGNDDigital Ground.
17 & 18VINAnalog Inputs, VIN1 and VIN2. The part can be pin strapped for any one of three analog input ranges;
RangePin StrapSignal Input
0 V to 5 VConnect VIN2 to VIN1VIN1 & VIN2
0 V to 10 VConnect VIN2 to GNDVIN1
±5 VConnect VIN2 to +5 VVIN1
20+5REF+5 V Reference input. This input is used in conjunction with SUM and V
inputs to scale an external
REF
+5 V reference to –3.5 V, the required reference for the part (see Figure 2).
21SUMSumming Point. This input is used in conjunction with +5REF and V
inputs to scale an external
REF
+5 V reference to –3.5 V, the required reference for the part (see Figure 2).
22V
REF
Voltage Reference Input. The AD7886 is specified with V
REF
= –3.5 V.
Interface and Control
1–4,DB7–DB4Three-state data outputs.
6–9,DB3–DB0These outputs are controlled by
CS and RD. DB11 is the Most Significant Bit (MSB).
25–28DB11–DB8
11
12
13
BUSYBUSY Output indicates converter status. BUSY is low during conversion.
CSChip Select Input. The device is selected when this input is low.
RDRead Input. This active low signal, in conjunction with CS, is used to enable the output data three-state
drivers.
14CONVSTConversion Start Input. This input is used to start conversion.
–4–
REV. B
PIN CONFIGURATIONS
AGND
VIN1
VIN2
DB4
DB5
DB6
DB11
DB10
DB9
DB8
DB7
AGND
SUM
+5REF
DB2
DB1
DB0
DGND
DB3
V
SS
V
REF
V
DD
CS
RD
CONVST
V
SS
V
DD
BUSY
AD7886
TOP VIEW
(Not to Scale)
5
6
7
8
9
10
11
28 27 2612
3
4
25
24
23
22
21
20
19
12
13 14 15 16 17 18
AD7886
DIP
DB7
DB6
DB5
DB4
DGND
DB3
DB2
DB1
DB0
V
DD
BUSY
CS
RD
CONVST
1
2
3
4
5
6
7
8
9
10
11
12
13
14
AD7886
TOP VIEW
(Not to Scale)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
DB8
DB9
DB10
DB11
V
SS
AGND
V
REF
SUM
+5REF
V
DD
VIN2
VIN1
AGND
V
SS
TERMINOLOGY
Unipolar Offset Error
The ideal first code transition should occur when the analog
input is 1 LSB above AGND. The deviation of the actual transition from that point is termed the offset error.
Bipolar Zero Error
The ideal midscale transition (i.e., 0111 1111 1111 to 1000
0000 0000) for the +5 V range should occur when the analog
input is at zero volts. Bipolar zero error is the deviation of the
actual transition from that point.
Gain Error
In the unipolar mode, gain error is measured with respect to the
first and last code transition points. The ideal difference between these points is FS–2 LSBs. For bipolar applications, the
gain error is measured from the midscale transition to both the
first and last code transitions. The ideal difference in this case is
FS/2–1 LSB. The gain error is defined as the deviation between
the ideal difference, given above, and the measured difference.
For the bipolar case, there are two gain errors; the figure in the
specification page represents the worst case. Ideal FS depends
on the +5REF input; for the 0 V to 5 V input, ideal FS = +5REF
and for the 0 V to 10 V and +5 V ranges, ideal FS = 2 × + 5REF.
CONVERTER DETAILS
The AD7886 is a triple-pass flash ADC that uses 15 comparators in a 4-bit flash technique to perform the 12-bit conversion
procedure. Each of the 4096 quantization levels is realized internally with a precision resistor DAC.
The fifteen comparators first compare the analog input voltage
to the V
four most significant bits and selects 1 out of 16 voltage segments. The comparators are then switched to 15 subvoltages on
that segment to determine the next four bits and select 1 out of
/16 voltages of the resistor array. This determines the
REF
256 voltage segments. A further switching of the comparators to
another 15 subvoltages produces the complete 12-bit conversion
REV. B
PLCC
result. The 12 bits of data are then stored internally in a threestate output latch.
REFERENCE INPUT
The AD7886 operates from a 3.5 V reference, which must be
provided at the V
input. Two on-chip resistors for use with
REF
an external amplifier can be used for deriving 3.5 V from standard 5 V references. Figure 2 shows an example with the AD586
which a is a high performance voltage reference exhibiting
excellent stability performance, 5 ppm/°C max. The external
amplifier serves a second function of force/sensing the V
REF
input. Force/sensing minimizes error contributions from
+V
+V
AD586
GND
IN
+5V
V
OUT
AD707
–
–3.5V
+5REF
SUM
V
REF
R1
9k
R2
6.3k
AD7886*
+
TO DAC
C1
10µF
C2
0.1µF
AGND
*ADDITIONAL PINS OMITTED FOR CLARITY
Figure 2. Typical Reference Circuitry
–5–
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