Page 1
查询Am29F010-120DGC1供应商
SUPPLEMENT
Am29F010 Known Good Die
1 Megabi t (128 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Fla sh Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 5.0 V ± 10% for read, erase, and program
operations
— Simplifies system-level power requirements
■ High performance
— 90 or 120 ns maximu m access time
■ Low power consumptio n
— 30 mA max active read current
— 50 mA max program/erase current
—<25 µA typical standby current
■ Flexible sector architecture
— Eig ht un i for m sec t or s
— Any combination of sectors can be erased
— Supports full chip erase
■ Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
progr am min g eq ui pm e nt
■ Embedded Algorithms
— Embedded Erase a lgorithm automatically
pre-programs and erases the chi p or any
combination of designated sector
— Embedded Program algorithm automatically
programs and v erifies data at specified address
■ Minimum 100,000 program/erase cycles
guaranteed
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■ Data P olling and T oggle Bits
— Provides a software method of detecting
program or erase cycle completion
■ T ested to datasheet specifications at
temperature
■ Quality and reliability levels equivalent to
standard packaged components
1/13/98 Publication# 21116 Rev: B Amendment/0
Issu e Date: January 1998
Page 2
SUPPLEMENT
GENERAL DESCRIPTION
The Am29F010 in Known Good Die (KGD) form is a 1
Mbit, 5.0 Volt-only Flash memory . AMD defines KGD as
standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.
Am29F010 Features
The Am29F010 device is organized as eight uniform
sectors of 16 Kbytes ea ch for fle x ible erase cap ab ilit y.
This de vice is desig ned t o be pr ogram med in- system
with the st andard system 5.0 V olt V
supply providing 12.0 Volt V
program or erase operations.
The Am29F010 in KGD form offers access times of 90
ns and 120 ns, allowing high speed microprocessors to
operat e witho ut wait s tates. To el imin ate bus con ten tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE) controls.
The device requires only a single 5.0 volt power sup-
ply for both re ad an d write functions. Inte rn al ly g en er ated and r egulated voltages a re provided for th e
program and erase operations.
The device is entirely command set compatible with the
JEDEC single- power -supply F lash st andar d. Commands ar e w ri tt en to th e c om ma nd re gi s ter us i ng st a ndard micr opro cess or wr ite timi ngs. R egi ster c ont ents
serve a s i nput t o an in tern al st ate ma chi ne that c ont rols
the erase and programming circuitry. Write cycles also
intern ally latch a ddr es se s an d d at a ne ed ed for t he pr ogramming and erase operations. Readi ng data out of
the devic e is similar to r eading from other Flas h or
EPROM devices .
Device programming occurs by executing the program
command sequence. Thi s invokes the Embedded
supp ly. A power
CC
is not required for
PP
Program algorithm—an internal algorit hm that automatica lly time s the pr ogram pulse widths and ver ifies
proper cell margin.
Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase
algori thm —an i nte rnal a lgo ri thm th at a uto matic all y pr eprograms the array (if it is not already programmed) before executing the erase operation. During erase, the
device au tom a ticall y tim es th e e ra se pu ls e wi d ths an d
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The sector erase architecture allows me mory sect ors
to be er ased and reprog rammed withou t affecting the
data contents of other sectors. The device is erased
when shipped from the factory.
The har dware data protection measures include a
low V
detector automatically inhibits write operations
CC
during power transitions . The hardware sector protection feature disables both program and erase oper-
ations in any combination of the sectors of memory,
and is imp lemen ted usi ng sta ndar d EPR OM pro gram mers.
The system can place the device into the standby mode.
Power co nsu mpt i on i s gr ea tl y re duce d in thi s mo de.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F010 data sheet, publication number
16736, for full electrical specifications for the
Am29F0 10 in KGD form.
2 Am29F010 Known Good Die 1/13/98
Page 3
SUPPLEMENT
PRODUCT SELECTOR GUIDE
Family Part Number Am29F010 KGD
Speed Option (V
Max Access Time, t
Max CE# Access, t
Max OE# Access, t
= 5.0 V ± 10%) -90 -120
CC
(ns) 90 120
ACC
(ns) 90 120
CE
(ns) 35 50
OE
DIE PHOTOGRAPH
Orientation relative to
top left corner of
Gel-Pak
Orientation relative to
leading edge of tape
and reel
DIE PAD LOCATIONS
1234567
8
AMD logo location
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
2627282930
25
24
1/13/98 Am29F010 Known Good Die 3
Page 4
PAD DESCRIPTION
SUPPLEMENT
Pad Signal
1V
2 A16 –33.20 –1.30 –0.84 –0.03
3 A15 –41.60 –1.30 –1.06 –0.03
4 A12 –49.90 –1.30 –1.27 –0.03
5 A7 –58.30 –1.30 –1.48 –0.03
6 A6 –66.60 –1.30 –1.69 –0.03
7 A5 –75.00 –1.30 –1.91 –0.03
8 A4 –74.40 –10.50 –1.89 –0.27
9 A3 –75.60 –158.20 –1.92 –4.02
10 A2 –69.40 –166.80 –1.76 –4.24
11 A1 –56.10 –166.80 –1.42 –4.24
12 A0 –46.10 –166.80 –1.17 –4.24
13 D0 –36.30 –166.90 –0.92 –4.24
14 D1 –25.90 –166.90 –0.66 –4.24
15 D2 –13.30 –166.90 –0.34 –4.24
CC
Pad Center (mils) Pad Center (millimeters)
XYXY
0.00 0.00 0.00 0.00
16 V
17 D3 4.70 –166.90 0.12 –4.24
18 D4 17.30 –166.90 0.44 –4.24
19 D5 27.60 –166.90 0.70 –4.24
20 D6 40.20 –166.90 1.02 –4.24
21 D7 50.60 –166.90 1.29 –4.24
22 CE# 60.60 –166.80 1.54 –4.24
23 A10 74.00 –166.80 1.88 –4.24
24 OE# 81.40 –158.20 2.07 –4.02
25 A11 80.20 –10.40 2.04 –0.26
26 A9 80.80 –1.30 2.05 –0.03
27 A8 72.40 –1.30 1.84 –0.03
28 A13 64.10 –1.30 1.63 –0.03
29 A14 55.70 –1.30 1.41 –0.03
30 WE# 47.40 –1.30 1.20 –0.03
SS
–4.30 –166.90 –0.11 –4.24
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
4 Am29F010 Known Good Die 1/13/98
Page 5
SUPPLEMENT
ORDERING INFORMATION
Standard Products
AMD KGD produ cts ar e avai lable i n seve ral pa ckages and operat ing ran ges. T he or der nu mber (Valid Combin ation) is form ed
by a combination of the following:
Am29F010
-90
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing
process and product technology reflected in this
document. It is entered in the revision field of AMD
standard product nomenclature.
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I=Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE AND MINIMUM ORDER QUANTITY
DP = Waffle Pack
245 die per 5 tray stack
DG = Gel-Pak
486 die per 6 tray stack
DT = Surftape™ (Tape and Reel)
2500 per 7-inch reel
DW = Gel-Pak
Call AMD sales office for minimum order quantity
SPEED OPTION
See Valid Combinations
®
Die Tray
®
Wafer Tray (sawn wafer on frame)
Valid Combinations
Am29F010-90 DPC 1, DPI 1, DPE 1,
DGC 1, DGI 1, DGE 1,
Am29F010-120
DTC 1, DTI 1, DTE 1,
DWC 1, DWI 1, DWE 1
DEVICE NUMBER/DESCRIPTION
Am29F010 Known Good Die
1 Megabit (128 K x 8-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
1/13/98 Am29F010 Known Good Die 5
Page 6
SUPPLEMENT
PRODUCT TEST FLOW
Figure 1 pr ovi d es an overview of A MD’s Kn ow n G ood
Die test flow. For more detailed information, refer to the
Am29F010 product qualification database supplement
for KGD. AMD implements quality assurance procedures th roug hout t he pro duct t est flow. In addi tion, an
Wafer So rt 1
Bake
24 hours at 250°C
Wafer Sort 2
off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good
Die products. These QA procedures also allow AMD to
produce KGD products without requiring or implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
Wafer So rt 3
High Temperature
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
6 Am29F010 Known Good Die 1/13/98
Page 7
SUPPLEMENT
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 174 mils x 189 mils
4.42 mm x 4.80 mm
Die Thickness . . . . . . . . . . . . . ~20 mils or ~0.51 mm
Bond Pad Size . . . . . . . . . . . . . . 4.47 mils x 4.47 mils
113.48 µm x 11 3.48 µm
Pad Area Free of Passivation . . . . . . . . . .19.98 mils
12,878 µm
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Bond Pad Metalization. . . . . . . . . . . . . . . . . . Al/Si/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .T
For Read-only . . . . . . . . . . .T
Operating Temperature . . . Commercial 0°C to +70°C
Industrial –40°C to +85°C
Extended –5 5 ° C to +125°C
(max) = 130°C
J
(max) = 140°C
J
MANUFACTURING INFORMATION
Manufacturing and Test. . . . . . . . . Fab 14, Austin, TX
Manufacturing ID. . . . . . . . . . . . . . . . . . . . . .98108AK
Preparation for Shipment . . . . . . . .Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . CS19AFDS
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
2
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
proce ss them at temperat ures greater tha n 250°C.
Failure to adher e to these handling i nstructions will
result in irreparable damage to the devices. For best
yiel d, AMD recom mends assem bly in a Clas s 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
1/13/98 Am29F010 Known Good Die 7
Page 8
SUPPLEMENT
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to AMD Products under this
agreement shall be subject to AMD’s standard terms
and co nd iti on s o f s ale , o r an y r evisions t her eo f, w hic h
revisio ns AMD res erves the rig ht to mak e at any time
and fro m tim e t o tim e . In th e e ve nt o f conflict bet w ee n
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants artic les of its manufacture against
defective materials or workmanship for a period of
ninety (9 0) da ys fr om d ate of ship ment. Thi s warr anty
does not extend beyond AMD’s customer, and does
not extend to die which has been affixed onto a board
or substrate of any kind. The liability of AMD under this
warranty is limited, at AMD’s option, solely to repair or
to repla cemen t wit h equiv ale nt artic les, or to m ake a n
appropriate credit adjustment not to exceed the original
sales price, f or articles returned to AMD, provided th at:
(a) The Buyer promptly notifies AMD in writing of each
and every defect or nonco nformity in any article for
which Buy er wishe s to mak e a wa rran ty claim again st
AMD; (b) Buyer obtains authoriza tion from AMD to
return the ar ticle; (c) the artic le is returned to AMD,
trans por tati on c har ges paid by AMD, F.O.B . AMD ’s fa ctory; and (d) AMD’s examination of such article discloses to its satisfaction that such alleged d efect or
nonconformity actually ex ists and w as not caused by
negligence, misuse, improper installation, accident or
unauthorized repair or alteration by an entity other than
AMD. The afore mentioned provisions do not extend
the original warranty period of any article whi ch has
either been repaired or replaced by AMD.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARR ANTIES, E XPRESSED OR IMPLIED ,
INCLUDING THE IMPLIED WARRANTY OF FI TNESS
FOR A PARTICULAR PURPOSE, THE IMPLI ED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’S
PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOR EGOING
CONSTITUTES THE BUYERS SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING ARTICLES AND AMD
SHALL NOT IN ANY EVENT BE LIABLE FOR
DAMAGES BY REASON OF FAILURE OF ANY
PRODUCT TO FUNCTION PROPERLY OR FOR ANY
SPECIAL, INDIRECT, CONSEQUENTIAL, INCIDENTAL OR EXEMPLARY DAMAGES, INCLUDING
BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS
OF USE OR COST OF LABOR BY REASON OF THE
FACT T HAT SUCH ARTICLES SHALL HAVE BEEN
DEFECTIVE OR NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customer s which exceed those g iven by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in wr iting fo r any claims w hich excee d
AMD’s warranty. Buyer assumes all responsibility for
success ful die pr ep, di e attach and wire b ondin g processes. Due to the unprotecte d nature o f the AMD
Products which are the subject hereof, AMD assumes
no responsibility for environmental effects on die.
AMD produ cts are n ot designed or author ized for us e
as components in life support appliances, devices or
systems where malfunction of a product can reasonably be expected to res ult in a personal injury. Buyer’s
use of A MD pro duct s f or use i n li fe s uppor t app li cati ons
is at Buyer’s own risk and Buyer agrees to fully indemnify AMD for an y damages resu lting in such use o r
sale.
REVISION SUMMARY FOR AM29F010
KNOWN GOOD DIE
Formatted to match current template. Updated Distinctive Characteristics and General Description sections
using the current main data sheet.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
8 Am29F010 Known Good Die 1/13/98
Loading...