ALPHA SMP1322-011, SMP1322-016, SMP1322-017, SMP1322-074, SMP1322-075 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com 1

Specifications subject to change without notice. 1/01A

Low Resistance
Plastic Packaged PIN Diodes

Features

■ Designed for High Performance Wireless
Switch Applications

■ Specified 1.5 Ω @ 1 mA

■ Multiple Package Configurations

Description

The SMP1322 series of plastic packaged, surface
mountable PIN diodes are designed for high v olume switch
applications from 10 MHz to beyond 2 GHz.The ultra low
resistance of these diodes (1.5 Ω maximum at 1 mA and

0.5 Ω typical at 10 mA) make the SMP1322 series

particularly suited to low loss PIN diode switches in battery
operated circuits. Available in a selection of plastic
packages and in a variety of configurations including an
ultra low inductance (0.2 nH) SOT-143 (SMP1322-017),
the small footprint SC-79 and the miniature SC-70. In
addition, the SMP1322-016 consists of 2 diodes in a
SOT-143 package configured to enable insertion in a
quarter-wave T/R switch with no crossover connections.

SMP1322 Series

Characteristic Value

Reverse Voltage (VR) 50 V
Power Dissipation @ 25°C Lead 250 mW

Temperature (PD)
Storage Temperature (TST) -65°C to +150°C
Operating Temperature (TOP) -65°C to +150°C
ESD Human Body Model Class 1B

Absolute Maximum Ratings

Single Common Series Pair Low Single T/R Switch Ultra Low Single

Cathode Inductance Inductance

Marking: PN1 Marking: PN3 Marking: PN2 Marking: PNB Marking: PN6 Marking: PNC

SOT-23 SOT-23 SOT-23 SOT-23 SOD-323 SOT-143 SOT-143 SC-79

♦ SMP1322-001 ♦ SMP1322-004 ♦ SMP1322-005 ♦ SMP1322-007 ♦ SMP1322-011 ♦ SMP1322-016 ♦ SMP1322-017 ♦ SMP1322-079

LS= 1.5 nH LS= 1.5 nH LS= 1.5 nH LS= 0.4 nH LS= 1.5 nH LS= 1.5 nH LS= 0.2 nH LS= 0.7 nH

SC-70 SC-70

♦ SMP1322-074 ♦ SMP1322-075

LS= 1.4 nH LS= 1.4 nH

♦ Available through distribution.

Parameter Condition Typ. Max. Unit

Reverse Current (IR)V

R

= 50 V 10 µA
Capacitance (CT) F = 1 MHz, V = 30 V 1.0 pF
Resistance (RS) F = 100 MHz, I = 1 mA 1.5 Ω
Resistance (RS) F = 100 MHz, I = 10 mA 0.5 Ω
Forward Voltage (VF) IF = 10 mA 0.85 V
Carrier Lifetime (TI) IF = 10 mA 0.4 µS
I Region Width 8 µm

Electrical Specifications at 25°C

2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [e-mail] • www.alphaind.com

Specifications subject to change without notice. 1/01A

Low Resistance Plastic Packaged PIN Diodes SMP1322 Series

Series Resistance vs. Current @ 100 MHz

0.1

0.01 0.1 1 10 100

1

10

100

Forward Current (mA)

Series Resistance (Ω)

0 1 2 5 10 20 50

Capacitance vs. Reverse Voltage

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Reverse Voltage (V)

Capacitance (pF)

1 MHz–1 GHz

400 500 600 700 800 900 1000

DC Characteristic

0.01

0.1

1

10

100

Forward Voltage (mV)

Forward Current (mA)

0 500 1000 1500 2000

Conductance vs. Frequency

and Reverse Voltage

0

500

1000

1500

2000

2500

3000

Frequency (MHz)

Conductance (µS)

0 V

10 V
40 V

Typical Performance Data

RRRRR

I

F

-55°C -15°C +25°C +65°C +100°C

(mA) (ΩΩ)(

ΩΩ

)(

ΩΩ

)(

ΩΩ

)(

ΩΩ

)

0.02 9.500 9.400 9.900 10.500 10.900

0.10 3.000 3.000 3.000 3.300 3.500

0.30 1.500 1.500 1.500 1.600 1.800

0.50 1.100 1.100 1.200 1.200 1.400

1.00 0.922 0.914 0.902 0.963 1.100

10.00 0.568 0.559 0.533 0.563 0.655

20.00 0.532 0.520 0.494 0.521 0.610

100.00 0.483 0.469 0.440 0.464 0.565

Resistance vs. Temperature @ 500 MHz

SMP1322-007

In the -007 configuration of the SOT-23 package, the package
inductance is effectively reduced to 0.4 nH, in comparison to
the 1.5 nH value of the standard configuration.This lower
inductance will be particularly beneficial when the diodes are
used as shunt connected switches at frequencies higher than
500 MHz, where inductance is the primary limitation on
maximum switch isolation.

To achieve the effective 0.4 nH, the SOT-23 package
must be inserted in the microstrip circuit board with a
gap in the trace, as shown
in the figure. Because
of the polarity of the
diode junction, this low
inductance feature is only
realizable with the cathode
connected to ground.

Gap

Ground