ALPHA AT006N3-00 Datasheet

Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 1
Specifications subject to change without notice. 3/99A
GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–6 GHz
Features
30 dB Range
Low DC Drain
Fast Switching
Requirements
5
Chip Outline
AT006N3-00
Description
The AT006N3-00 chip is a GaAs FET MMIC non-reflective bridged “T” attenuator that provides over 30 dB of “matched”attenuation.The input and output VSWR is less than 1.5:1 maximum under all attenuation values. Applications for these fast attenuators are AGC circuits and variable level control in high reliability and telecommunications systems.
0.000
0.000
0.940
0.601
1.115
0.840
0.100
0.100
0.556
1.014
0.319
0.793
1.All measurements made in a 50 system, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3.Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
4. DC = 300 kHz.
5. See Quality/Reliability section.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 7 ns
On, Off (50% CTL to 90/10% RF) 10 ns Video Feedthru
3
20 mV
Attenuation Flatness 0–10 dB DC–6 GHz ±0.5 dB
11–20 dB ±1.0 dB 21–30 dB ±1.5 dB 31–Max. ±2.0 dB
Compression Point for all Attenuation 0.1 dB -8 (-4) dBm Levels 50 MHz (> 500 MHz) 1.0 dB -3 (0) dBm
Control Voltages V
Low
= 0 to -0.2 V @ 20 µA Max.
V
High
= -5 V @ 50 µA Max.
Operating Characteristics at 25°C
Parameter
1
Frequency
4
Min. Typ. Max. Unit
Insertion Loss
2
DC–1.0 GHz 0.8 1.0 dB DC–2.0 GHz 1.0 1.2 dB DC–4.0 GHz 1.2 1.4 dB DC–6.0 GHz 1.5 1.7 dB
Attenuation Range DC–1.0 GHz 30 38 dB
DC–2.0 GHz 29 35 dB DC–4.0 GHz 26 32 dB DC–6.0 GHz 25 30 dB
VSWR (I/O) DC–2.0 GHz 1.2:1 1.3:1
DC–4.0 GHz 1.4:1 1.5:1 DC–6.0 GHz 1.5:1 1.6:1
Electrical Specifications at 25°C
Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm.
GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–6 GHz AT006N3-00
2 Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 3/99A
Relative Attenuation vs. Control Voltages
Relative Attenuation (dB)
-5.0 0
5
F = 1 GHz, V
P
1
= -3.5 V
10 15 20 25 30
35
-4.0
-3.0
-2.0
-1.0
V
1
V
2
Control Voltages (V)
0
V1 (Series)
V2 (Shunt)
Attenuation vs. 1.0 dB Compression Point
Attenuation (dB)
-5 0
5
F = 50 MHz
10 15 20 25 30
0
5
10
15
P
IN
at 1.0 dB Compression (dBm)
20
J
1
J
2
V
2
V
1
V1 (ALT.)
GND GND GND
Attenuation (By State) vs. Frequency
Frequency (GHz)
0
DC
31 2 4 5
6
10
20
30
40
Attenuation (dB)
50
Typical Performance Data
Chip Layout
Switch Schematic
Characteristic Value
RF Input Power (RF In) 10 mW > 500 MHz
4 mW @ 50 MHz Control Voltage (VC) +0.2 V, -10 V Operating Temperature (TOP) -55°C to +125°C Storage Temperature (TST) -65°C to +150°C Thermal Resistance (ΘJC) 25°C/W
Absolute Maximum Ratings
50 50
J
1 J
2
V
1
V
2
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