ALPHA AT002N5-11 Datasheet

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 1
Specifications subject to change without notice. 6/00A
GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz
Features
Dual Control Voltages
Low Insertion Loss
8 Lead Hermetic Surface Mount Package
Requirements
5
-11
AT002N5-11
Description
The AT002N5-11 is a GaAs IC FET absorptive attenuator. This device provides up to 50 dB variable attenuation from DC–3 GHz. Attenuation can be controlled by varying each of the two control bias voltages from 0 to -5 V. This attenuator is recommended for fast response AGC circuits in commercial and high reliability applications.
0.180 (4.57 mm) SQ. MAX.
0.400 (10.16 mm)
0.380 (9.65 mm)
0.150
(3.81 mm)
0.050
(1.27 mm)
TYP.
ORIENTATION
MARK
0.017 (0.43 mm)
0.013 (0.33 mm)
0.006 (0.15 mm)
0.004 (0.10 mm)
0.250 (6.35 mm)
0.200 (5.08 mm)
0.070 (1.78 mm)
0.040 (1.02 mm)
0.075
(1.91 mm)
MAX.
Parameter
1
Frequency
4
Min. Typ. Max. Unit
Insertion Loss
2
DC–1.0 GHz 1.2 1.4 dB DC–2.0 GHz 1.4 1.8 dB DC–3.0 GHz 1.7 2.0 dB
Attenuation Range DC–1.0 GHz 50 52 dB
DC–2.0 GHz 45 48 dB DC–3.0 GHz 40 42 dB
VSWR (I/O) DC–1.0 GHz 1.2:1 1.3:1
DC–2.0 GHz 1.4:1 1.5:1 DC–3.0 GHz 1.6:1 1.8:1
Electrical Specifications at 25°C
1. All measurements made in a 50 system, unless otherwise specified.
2. Insertion loss changes by 0.003 dB/°C.
3. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
4. DC = 300 kHz.
5. See Quality/Reliability section.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 10 ns
On, Off (50% CTL to 90/10% RF) 15 ns Video Feedthru
3
20 mV
Input Power for 1 dB Compression For All Attenuation Levels 0.5–3 GHz 0 dBm
0.05 GHz -3 dBm
Control Voltages V
Low
= 0 to -0.2 V @ 20 µA Max.
V
High
= -5 V @ 100 µA Max.
Operating Characteristics at 25°C
GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz AT002N5-11
2 Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 6/00A
Insertion Loss vs. Frequency
Frequency (GHz)
0.4 DC 1 2 3
0.8
1.2
1.6
2.0
Insertion Loss (dB)
2.4
+85˚C
-55˚C
Attenuation (By State) vs. Frequency
Frequency (GHz)
10
DC 1 2 3
20
30
40
50
Attenuation (dB)
60
50 dB ± 4 dB
40 dB ± 2 dB
30 dB ± 1 dB
20 dB ± 0.5 dB
10 dB ± 0.2 dB
Relative Attenuation vs. Control Voltages
Relative Attenuation (dB)
-5.0 DC 2010 30 5040 60
-4.0
-3.0
-2.0
-1.0
V
1
V
2
Control Voltages (V)
0
V1 (Series)
V2 (Shunt)
F = 1 GHz, V
P
1
= 3.5 V
Typical Performance Data
Typical Transfer Curve
Pin Out
J
1
GND
V
1
V
2
GND
GND GND
J
2
Attenuation vs. 1.0 dB Compression Point
Attenuation (dB)
-5 0105152520 30
0
5
10
15
P
IN
at 1.0 dB Compression (dBm)
20
F = 500 MHz
1. VP= FET pinchoff voltage.
Characteristic Value
RF Input Power (RF In) 10 mW > 500 MHz 0/-8 V Control
4 mW 50 MHz -8 V Control
Control Voltage (VC) +0.2 V, -10 V
Operating Temperature (TOP) -55°C to +125°C
Storage Temperature (TST) -65°C to +150°C
Thermal Resistance (ΘJC)25°C/W
Absolute Maximum Ratings
Attenuation
V
1
V
2
J1–J
2
0 -5 Insertion Loss
-5 0 Full Attenuation
Truth Table
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