ALPHA AT002N5-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 3/99A
GaAs 50 dB IC Voltage Variable
Dual Control Attenuator DC–3 GHz
Features
■ 50 dB Range
■ Low Insertion Loss
■ Fast Switching
■ Meets MIL-STD-883 Screening
Requirements
AT002N5-00
Description
The AT002N5-00 attenuator provides up to 50 dB variable
attenuation from DC–3 GHz under non-reflective
conditions.Attenuation can be controlled by v arying each
of the two control bias voltages from 0 to -5 V.The control
current is less than 100 µA and the attenuator will operate
at 0 dBm with switching time, typically 10 ns.The chip is
configured using two “T”attenuators in the series and two
in parallel. This device may be used with a single bias
(V1= 0) but with reduced attenuation and match.
Applications include fast response AGC circuits requiring
high attenuation, such as for radar processing,
instrumentation, and levelers in RF equipment.
0.000
0.000
0.152
1.076
1.230
0.157
1.072
J
2
0.159
0.981
0.570
0.793
0.349
V1 (ALT.)
0.348
0.792
0.981
GND
GNDV
2
(ALT.)
V
1
V
2
GND
0.569
1.140
0.614
GND
J
1
Chip Outline
Parameter
1
Frequency
2
Min. Typ. Max. Unit
Insertion Loss DC–1.0 GHz 1.2 1.4 dB
DC–2.0 GHz 1.6 1.8 dB
DC–3.0 GHz 1.8 2.0 dB
Attenuation Range DC–1.0 GHz 50 52 dB
DC–2.0 GHz 48 50 dB
DC–3.0 GHz 45 48 dB
VSWR (I/O) DC–1.0 GHz 1.3:1
DC–2.0 GHz 1.5:1
DC–3.0 GHz 1.8:1
Electrical Specifications at 25°C
Dimensions indicated in mm.
All bonding pads are 0.1 x 0.1 mm.
Chip thickness = 0.2 mm.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics Rise, Fall (10/90% or 90/10% RF) 10 ns
On, Off (50% CTL to 90/10% RF) 15 ns
Video Feedthru 20 mV
Attenuation Flatness 0–10 DC–3 GHz ±0.25 dB
11–20 ±0.50 dB
21–30 ±1.00 dB
31–40 ±2.00 dB
41–50 ±4.00 dB
Compression Point for all 1.0 dB 50 MHz–3 GHz -4 dBm
Attenuation Levels > 500 MHz 0 dBm
Control Voltages V
Low
= 0 to -0.2 V @ 20 µA Max.
V
High
= -5 V @ 100 µA Max.
Operating Characteristics at 25°C
1.All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC–3 GHz AT002N5-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 3/99A
Relative Attenuation vs. Control Voltages
Relative Attenuation (dB)
-5.0
DC 2010 30 5040 60
-4.0
-3.0
-2.0
-1.0
V
1
V
2
Control Voltages (V)
0
V1 (Series)
V2 (Shunt)
F = 1 GHz, V
P
1
= 3.5 V
Attenuation (By State) vs. Frequency
Frequency (GHz)
10
DC 1 2 3
20
30
40
50
Attenuation (By State) (dB)
60
±4 dB
2 dB
1 dB
0.5 dB
0.2 dB
±
±
±
±
J
2
V1 (ALT.)
GND
GNDV
2
(ALT.)
V
1
V2GND
GND
J
1
Attenuation vs. 1.0 dB Compression Point
Attenuation (dB)
-5
0 105 15 2520 30
0
5
10
15
P
IN
at 1.0 dB Compression (dBm)
20
F = 50 MHz
Typical Performance Data
Characteristic Value
RF Input Power (RF In) 10 mW > 500 MHz 0/-8 V Control
4 mW 50 MHz, -8 V Control
Control Voltage (VC) +0.2 V, -10 V
Operating Temperature (TOP) -55°C to +125°C
Storage Temperature (TST) -65°C to +150°C
Thermal Resistance (ΘJC) 25°C/W
Absolute Maximum Ratings
1.VP= FET pinchoff voltage.
Chip Layout
J
1
J
2
V1V
2
Switch Schematic
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