Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 10/99A
GaAs IC High Isolation Positive Control
SPDT Switch DC–3.0 GHz
AS176-59
Preliminary
Features
■ Positive Voltage Control (0/+3 to +5 V)
■ High Isolation (50 dB @ 0.9, 1.9 GHz)
5
■ Low DC Power Consumption
■ Ideal for Cellular, GSM, DCS,PCS, 3G and
2.4 GHz ISM Applications
MSOP-8
Description
The AS176-59 is a GaAs FET IC SPDT switch packaged
in a MSOP-8 plastic package for low cost, high isolation
commercial applications. Ideal building block for base
station dual band applications where synthesizer isolation
is critical. Use in conjunction with the AS165-59 SPST
switch to meet GSM synthesizer isolation requirements.
Parameter
1
Condition Frequency
2
Min. Typ. Max. Unit
Insertion Loss
3
DC–1.0 GHz 0.7 0.9 dB
DC–2.0 GHz 0.8 1.0 dB
DC–2.5 GHz 0.8 1.1 dB
DC–3.0 GHz 0.9 1.2 dB
Isolation
4
J1–J2/J1–J
3
DC–1.0 GHz 45/50 50/55 dB
J1–J2/J1–J
3
DC–2.0 GHz 41/38 45/42 dB
DC–2.5 GHz 29 34 dB
DC–3.0 GHz 22 27 dB
Isolation
5
J1–J2/J1–J
3
DC–1.0 GHz 45/50 50/55 dB
DC–2.0 GHz 47 52 dB
DC–2.5 GHz 36 40 dB
DC–3.0 GHz 30 35 dB
VSWR
6
DC–2.0 GHz 1.3:1 1.5:1
DC–3.0 GHz 1.5:1 1.8:1
Electrical Specifications at 25°C (0, +3 V), (0, +5 V)
0.012 (0.30 mm)
PIN 1
PIN 1
INDICATOR
+ 0.006 (0.15 mm)
7.0˚
TYP.
0.038 (0.95 mm)
0.030 (0.75 mm)
0.017
(0.43 mm)
8.0˚
MAX.
0.028 (0.70 mm)
0.016 (0.40 mm)
0.007 (0.18 mm)
± 0.005 (0.12 mm)
0.006 (0.15 mm)
0.002 (0.05 mm)
- 0.002 (0.05 mm)
0.0256 (0.65 mm) TYP.
0.118 (3.00 mm)
± 0.004 (0.1 mm)
SQ.
0.193 (4.90 mm)
REF.
Parameter Condition Frequency Min. Typ. Max. Unit
Switching Characteristics
7
Rise, Fall (10/90% or 90/10% RF) 60 ns
On, Off (50% CTL to 90/10% RF) 100 ns
Video Feedthru 50 mV
Intermodulation Intercept Point (IP3) Two-tone Input Power +5 dBm
+3 V 0.5–3.0 GHz +41 dBm
+5 V 0.5–3.0 GHz +45 dBm
Control Voltages V
Low
= 0 to 0.2 V @ 20 µA Max.
V
High
= +3 V @ 100 µA Max. to +5 V @ 200 µA Max.
VS = V
High
± 0.2 V
Operating Characteristics at 25°C (0, +5 V)
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
3. Insertion loss changes by 0.003 dB/°C.
4. Pin 4: N/C.
5. Pin 4: GND.
6. Insertion loss state.
7. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth.
GaAs IC High Isolation Positive Control SPDT Switch DC–3.0 GHz AS176-59
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 10/99A
J
2
J
1
V
1
V
2
N/C
GND
GND
C
BL
C
BL
J
3
C
BL
12 34
87 65
CBL= 47 pF.
V
1
V
2
J1–J
2
J1–J
3
0V
High
Isolation Insertion Loss
V
High
0 Insertion Loss Isolation
Truth Table
Pin Out
V
High
= +3 V to +5 V.
Insertion Loss vs. Frequency
Frequency (GHz)
Insertion Loss (dB)
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0 0.5 1.0 1.5 2.0 2.5 3.0
J
1–J2
J1–J
3
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
Isolation vs. Frequency
Pin 4: N/C
Frequency (GHz)
Isolation (dB)
0 0.5 1.0 1.5 2.0 2.5 3.0
J
1–J3
J1–J
2
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
Isolation vs. Frequency
Pin 4: GND
Frequency (GHz)
Isolation (dB)
0 0.5 1.0 1.5 2.0 2.5 3.0
J
1–J2
J1–J
3
Typical Performance Data (0, +5 V)
Characteristic Value
RF Input Power 1 W Max. > 500 MHz
0/+8 V Control
Supply Voltage +8 V
Control Voltage -0.2 V, +8 V
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Θ
JC
25°C/W
Absolute Maximum Ratings
VSWR vs. Frequency
Frequency (GHz)
VSWR (dB)
0 0.5 1.0 1.5 2.0 2.5 3.0
1.0
1.2
1.4
1.6
1.8
2.0
J
1–J2
J1–J
3