ALPHA AP640R7-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 2/00A
24–35 GHz GaAs MMIC
High Power SPDT Reflective PIN Switch
Features
■ Broad Bandwidth
■ Low Loss, < 1.5 dB
■ High Isolation, > 28 dB
■ Return Loss, < -12 dB
■ Fast Switching Speed, < 4 ns
■ High Power Handling, 40 dBm Peak,
36 dBm CW
Description
Alpha’s high power, single pole, double throw PIN diode
switch is a robust, high performance switch. It is ideal for
low loss, high isolation applications, particularly where
broad bandwidths and high power handling is required.
The chip uses Alpha’s proven PIN diode technology, and
is based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. The GaAs MMIC employs
a specialized high power PIN diode in each arm and an
on-chip bias network. Chips are measured on a 100%
basis at 24, 28, 31 and 35 GHz for insertion loss, isolation,
input and output return losses, and also at DC for diode
breakdown voltage and turn on voltage.
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter Symbol Condition Min. Typ.
2
Max. Unit
Insertion Loss IL F = 24, 28, 31, 35 GHz 1.2 1.5 dB
Isolation ISO F = 24, 28, 31, 35 GHz 28 30 dB
Input Return Loss RL
I
F = 24, 28, 31, 35 GHz 16 12 dB
Output Return Loss (Insertion State) RL
O
F = 24, 28, 31, 35 GHz 17 14 dB
Leakage Current I
DD
V = -50 V 2 20 µA
Switching Speed
1
4ns
Output Power at 1 dB Compression
1
P
1 dB
F = 35 GHz 36 dBm
Electrical Specifications at 25°C
0.000
0.000
1.100
2.190
1.095
0.988
2.078
0.113
0.398
Absolute Maximum Ratings
Characteristic Value
Operating Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
DC Reverse Bias -100 V (-20 mA)
DC Forward Bias +2.6 V (100 mA)
P
IN
15 W
AP640R7-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
24–35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch AP640R7-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 2/00A
Performance vs. Frequency
Bias Conditions: I
F
= 20 mA, VR = -3.5 V
-40
-30
-20
-10
0
15 20 25 30 35 40
Frequency (GHz)
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Input Return Loss
Output Return Loss
Insertion Loss
Isolation
-40
-30
-20
-10
0
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Performance vs. DC Bias
F = 28 GHz, Reverse Voltage = -3.5 V
Forward Current (mA)
1 2 5 10 4020
Output Return Loss
Input Return Loss
Isolation
Insertion Loss
J
3
J
1
J
2
B
2
B
1
RESISTORRESISTOR
“ON ARM”
-5 V (~ 2 µA)
“OFF ARM”
+20 mA (~ 2.50 V)
J
2
J
1
B
1
B
2
J
3
-40
-30
-20
-10
0
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Performance vs. DC Bias
F = 28 GHz, Forward Current = 20 mA
-26.0 -5.0 -3.5 -1.0 0.0
Reverse Bias Voltage (V)
Output Return Loss
Input Return Loss
Isolation
Insertion Loss
Typical Performance Data
Bias Arrangement
Circuit Schematic
B
1
B
2
J1–J
2
+20 mA -5 V Insertion Loss
-5 V +20 mA Isolation
Truth Table
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