ALPHA AP640R6-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 2/00A
24–31 GHz GaAs MMIC
High Isolation SPDT Reflective PIN Switch
Features
■ Low Loss, < 1.2 dB
■ High Isolation, > 34 dB
■ Return Loss, < -12 dB
■ Fast Switching Speed, < 4 ns
■ High Power Handling, 37 dBm Peak,
33 dBm CW
Description
Alpha’s high isolation, single pole, double throw PIN diode
switch is a robust, high performance switch. It is ideal for
low loss, high isolation applications, particularly where high
power handling is required.The chip uses Alpha’s proven
PIN diode technology, and is based upon MBE layers for
the highest uniformity and repeatability.The diodes employ
surface passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate an epoxy die attach process. The
GaAs MMIC employs two shunt PIN diodes in each arm
and an on-chip bias network. Chips are measured on a
100% basis at 24, 28, and 30 GHz for insertion loss,
isolation, input and output return losses, and also at DC
for diode breakdown voltage and turn on voltage.
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter Symbol Condition Min. Typ.
2
Max. Unit
Insertion Loss IL F = 24, 28, 31 GHz 1 1.2 dB
Isolation ISO F = 24, 28, 31 GHz 34 37 dB
Input Return Loss RL
I
F = 24, 28, 31 GHz 20 15 dB
Output Return Loss (Insertion State) RL
O
F = 24, 28, 31 GHz 15 12 dB
Leakage Current I
DD
V = -50 V 2 20 µA
Switching Speed
1
4ns
Output Power at 1 dB Compression
1
P
1 dB
F = 35 GHz 33 dBm
Electrical Specifications at 25°C
0.000
0.000
1.095
2.190
0.398
0.988
0.113
1.100
2.078
0.095
2.095
Absolute Maximum Ratings
Characteristic Value
Operating Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
DC Reverse Bias -70 V (-20 mA)
DC Forward Bias +1.3 V (100 mA)
P
IN
10 W
AP640R6-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
24–31 GHz GaAs MMIC High Isolation SPDT Reflective PIN Switch AP640R6-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 2/00A
Performance vs. Frequency
Bias Conditions: I
F
= 20 mA, VR = -3.5 V
-40
-30
-20
-10
0
15 20 25 30 35 40
Frequency (GHz)
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Input Return Loss
Output Return Loss
Insertion Loss
Isolation
-40
-30
-20
-10
0
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Performance vs. DC Bias
F = 28 GHz, Reverse Voltage = -3.5 V
Forward Current (mA)
125102040
Output Return Loss
Input Return Loss
Isolation
Insertion Loss
J
3
J
J
2
B
2
B
1
RESISTORRESISTOR
“ON ARM”
-5 V (~ 2 µA)
“OFF ARM”
+20 mA (~ 1.25 V)
J
2
J
1
B
1
B
2
J
3
-40
-30
-20
-10
0
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Performance vs. DC Bias
F = 28 GHz, Forward Current = 20 mA
-26.0 -5.0 -3.5 -1.0 0.0
Reverse Bias Voltage (V)
Output Return Loss
Input Return Loss
Isolation
Insertion Loss
Typical Performance Data
Bias Arrangement
Circuit Schematic
Truth Table
B
1
B
2
J1–J
2
+20 mA -5 V Insertion Loss
-5 V +20 mA Isolation
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