ALPHA AP640R5-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 3/00A
24–40 GHz GaAs MMIC
SPDT Reflective PIN Switch
Features
■ Broad Bandwidth
■ Low Loss, < 1.1 dB (24–35 GHz)
■ High Isolation, > 30 dB
■ Excellent Return Loss, < -12 dB
■ Fast Switching Speed, < 2 ns
■ High Power Handling, 37 dBm Peak,
33 dBm CW
Description
Alpha’s single pole, double throw PIN diode switch is a
robust, high performance switch. It is ideal for low loss,
high isolation applications, particularly where broad
bandwidths and high power handling is required.The chip
uses Alpha’s proven PIN diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. The GaAs MMIC employs
a shunt PIN diode in each arm and an on-chip bias
network. Chips are measured on a 100% basis at 24, 28,
31 and 35 GHz for insertion loss, isolation, input and
output return losses and also at DC for diode breakdown
voltage and turn on voltage.
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter Symbol Condition Min. Typ.
2
Max. Unit
Insertion Loss IL F = 24, 28, 31, 35 GHz 0.8 1.1 dB
F = 38, 40 GHz 1.8 2.4 dB
Isolation ISO F = 24, 28, 31, 35, 38, 40 GHz 30 34 dB
Input Return Loss RL
I
F = 24, 28, 31, 35, 38, 40 GHz 25 15 dB
Output Return Loss (Insertion State) RL
O
F = 24, 28, 31, 35 GHz 20 13 dB
F = 38, 40 GHz 14 12 dB
Leakage Current I
DD
V = -50 V 1 10 µA
Switching Speed
1
2ns
Output Power at 1 dB Compression
1
P
1 dB
F = 35 GHz 33 dBm
Electrical Specifications at 25°C
0.000
0.000
0.398
1.100
0.988
2.190
1.095
2.078
0.113
Absolute Maximum Ratings
Characteristic Value
Operating Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
DC Reverse Bias -70 V (-10 mA)
DC Forward Bias +1.3 V (50 mA)
P
IN
10 W
AP640R5-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
24–40 GHz GaAs MMIC SPDT Reflective PIN Switch AP640R5-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 3/00A
Performance vs. Frequency
Bias Conditions: I
F
= 10 mA, VR = -3.5 V
-40
-30
-20
-10
0
15 20 25 30 35 40
Frequency (GHz)
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Input Return Loss
Output Return Loss
Insertion Loss
Isolation
-40
-30
-20
-10
0
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Performance vs. DC Bias
F = 28 GHz, Reverse Voltage = -3.5 V
Forward Current (mA)
1 2 5 10 20
Output Return Loss
Input Return Loss
Isolation
Insertion Loss
J
3
J
2
B
2
B
1
RESISTORRESISTOR
“ON ARM”
-5 V (~ 1 µA)
“OFF ARM”
+10 mA (~ 1.25 V)
J
J
2
J
1
B
1
B
2
J
3
-40
-30
-20
-10
0
Return Loss & Isolation (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Performance vs. DC Bias
F = 28 GHz, Forward Current = 10 mA
-26.0 -5.0 -3.5 -1.0 0.0
Reverse Bias Voltage (V)
Output Return Loss
Input Return Loss
Isolation
Insertion Loss
Typical Performance Data
Bias Arrangement
Circuit Schematic
B
1
B
2
J1–J
2
J1–J
3
+10 mA -5 V Insertion Loss Isolation
-5 V +10 mA Isolation Insertion Loss
Truth Table
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