ALPHA AP640R1-00 Datasheet
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 1
Specifications subject to change without notice. 3/00A
18–40 GHz GaAs MMIC
High Isolation SPST Reflective PIN Switch
Features
■ Broad Bandwidth
■ Low Loss, < 1.3 dB
■ High Isolation, > 37 dB
■ Excellent Return Loss, < -13 dB
■ Fast Switching Speed, 4 ns
■ High Power Handling, 37 dBm Peak,
33 dBm CW
Description
Alpha’s high isolation, single pole, single throw PIN diode
switch is a robust, high performance switch. It is ideal for
low loss, high isolation applications, particularly where
broad bandwidths and high power handling is required.
The chip uses Alpha’s proven PIN diode technology, and
is based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. The GaAs MMIC employs
two shunt PIN diodes and an on-chip bias network. Chips
are measured on a 100% basis at 24, 28, 31 and 35 GHz
for insertion loss, isolation, input and output return losses,
and also at DC for diode breakdown voltage and turn on
voltage.
Dimensions indicated in mm.
All pads are ≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter Symbol Condition Min. Typ.
2
Max. Unit
Insertion Loss IL F = 18, 21, 24, 28, 31, 35 GHz 1.0 1.3 dB
F = 38, 40 GHz 1.3 1.9 dB
Isolation ISO F = 18, 21, 24, 28, 31, 35 GHz 37 42 dB
F = 38, 40 GHz 33 36 dB
Input Return Loss (Insertion State) RL
I
F = 18, 21 GHz 14 12 dB
F = 24, 28, 31, 35, 38, 40 GHz 24 15 dB
Output Return Loss (Insertion State) RL
O
F = 18, 21 GHz 14 12 dB
F = 24, 28, 31, 35, 38, 40 GHz 22 13 dB
Leakage Current I
DD
V = -50 V 2 20 µA
Switching Speed
1
4ns
Output Power at 1 dB Compression
1
P
1 dB
F = 35 GHz 33 dBm
Electrical Specifications at 25°C
0.000
0.000
1.225
0.670
0.313
0.585
0.877
0.070
1.150
Absolute Maximum Ratings
Characteristic Value
Operating Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
DC Reverse Bias -70 V (-20 mA)
DC Forward Bias +1.3 V (100 mA)
P
IN
10 W
AP640R1-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
18–40 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch AP640R1-00
2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
Specifications subject to change without notice. 3/00A
Performance vs. Frequency
Bias Conditions: I
F
= 20 mA, VR = -3.5 V
-50
-30
-40
-20
-10
0
15 20 25 30 35 40
Frequency (GHz)
Return Loss & Isolation (dB)
-5
-3
-4
-2
-1
0
Insertion Loss (dB)
Input Return Loss
Output Return Loss
Insertion Loss
Isolation
-50
-40
-30
-20
-10
0
Return Loss & Isolation (dB)
0.0
0.3
0.6
0.9
1.2
1.5
Forward Voltage (V)
Performance vs. DC Bias
F = 28 GHz
Forward Current (mA)
0 1 2 5 10 20 40
Input/Output Return Loss
Isolation
Forward Voltage
J
1
J
2
B
1
RESISTOR
J
2
B
1
J
3
-30
-20
-10
0
Return Loss (dB)
-4
-3
-2
-1
0
Insertion Loss (dB)
Performance vs. DC Bias
F = 28 GHz
-26.0 -5.0 -3.5 -1.0 0.0
Reverse Bias Voltage (V)
Output Return Loss
Input Return Loss
Insertion Loss
Typical Performance Data
Bias Arrangement
Circuit Schematic
B
1
J1–J
2
+20 mA Isolation
-5 V Insertion Loss
Truth Table
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