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查询3213供应商
Package Designator ‘LH’ Pinning
(SOT23W)
3
V
DD
12
SUPPLY
Pinning is shown viewed from branded side.
ABSOLUTE MAXIMUM RATINGS
at TA = +25°C
Supply Voltage, VDD .............................. 6 V
Magnetic Flux Density, B .......... Unlimited
Output Off Voltage, V
Output Current, I
Junction Temperature, TJ ................ +170°C
Operating Temperature Range, TA
Suffix 'E' ...................... -40°C to +85°C
Suffix 'L' ................... -40°C to +150°C
Storage Temperature Range,
TS .............................. -65°C to +170°C
Caution: These CMOS devices have input
static protection (Class 3) but are still susceptible to damage if exposed to extremely
high static electrical charges.
GROUND
OUT
........................... 1 mA
OUT
OUTPUT
Dwg. PH-016-1
...................... 6 V
3213
AND
3214
MICROPOWER, ULTRA-SENSITIVE
HALL-EF FECT SWITCHES
The A3213xx and A3214xx integrated circuits are ultra-sensitive, pole
in de pen dent Hall-effect switches with a latched digital output. They are
es pe cial ly suited for operation in battery-operated, hand-held equip ment such
as cellular and cordless tele phones, pagers, and palmtop com put ers. A 2.4 volt
to 5.5 volt operation and a unique clocking scheme reduce the average op er at ing power requirements – the A3213xx to 825 µW, the A3214xx to 14 µW
(typical at 2.75 V)! Except for operating duty cycle and average operating
current, the A3213xx and A3214xx are identical.
Unlike other Hall-effect switches, either a north or south pole of suf fi cient
strength will turn the output on; in the absence of a magnetic field, the output
is off. The polarity independence and minimal power requirement allows
these devices to easily replace reed switches for superior reliability and ease of
manufacturing, while eliminating the requirement for signal conditioning.
Improved stability is made possible through chopper stabilization (dy nam ic offset cancellation), which reduces the residual offset voltage normally
caused by device overmolding, temperature de pen den cies, and thermal stress.
These devices include on a single silicon chip a Hall-voltage generator,
small-signal amplifier, chopper sta bi li za tion, a latch, and a MOSFET output.
Advanced BiCMOS processing is used to take advantage of low-voltage and
low-power requirements, component matching, very low input-offset errors,
and small component geometries.
Range 'E' devices are rated for operation over a tem per a ture range of
-40°C to +85°C; range 'L' devices are rated for operation over a tem per a ture
range of -40°C to +150°C. Two package styles provide a mag net i cal ly op ti mized pack age for most ap pli ca tions. ‘LH’ is a min ia ture low-profile surfacemount package, ‘UA’ is a three-lead SIP for through-hole mounting. Each
package is available in a lead (Pb) free version (suffix, –T) , with a 100% matte
tin plated leadframe.
FEATURES
■ Micropower Operation
■ Operate With North or South Pole
■ 2.4 V to 5.5 V Battery Operation
■ Chopper Stabilized
Superior Temperature Stability
Extremely Low Switch-Point Drift
Insensitive to Physical Stress
■ ESD Protected to 5 kV
■ Sol id-State Reliability
■ Small Size
■ Easily Manufacturable With Magnet Pole Independence
Data Sheet
27622.62F
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3213
AND
3214
MICROPOWER,
ULTRA-SENSITIVE
HALL-EFFECT SWITCHES
Product Selection Guide
Part Number Pb-free Packing* Mounting
A3213ELHLT –
A3213ELHLT-T Yes
A3213EUA –
A3213EUA-T Yes
A3213LLHLT –
A3213LLHLT-T Yes
A3213LUA –
A3213LUA-T Yes
A3214ELHLT –
A3214ELHLT-T Yes
A3214EUA –
A3214EUA-T Yes
A3214LLHLT –
A3214LLHLT-T Yes
A3214LUA –
A3214LUA-T Yes
*Contact Allegro for additional packing options.
7-in. reel
3000 pieces/reel
Bulk
500 pieces/bag
7-in. reel
3000 pieces/reel
Bulk
500 pieces/bag
7-in. reel
3000 pieces/reel
Bulk
500 pieces/bag
7-in. reel
3000 pieces/reel
Bulk
500 pieces/bag
Surface Mount
SIP through hole
Surface Mount
SIP through hole
Surface Mount
SIP through hole
Surface Mount
SIP through hole
Ambient, T
(ºC)
–40 to 85
–40 to 150
–40 to 85
–40 to 150
A
DC
(%)
25 460
0.10 11
I
DDAVG(TYP)
(µA)
2
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
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3213
AND
3214
MICROPOWER,
ULTRA-SENSITIVE
HALL-EFFECT SWITCHES
FUNCTIONAL BLOCK DIAGRAM
SUPPLY
SWITCH
X
TIMING
LOGIC
OUTPUT
& HOLD
DYNAMIC
SAMPLE
OFFSET CANCELLATION
800
700
600
500
400
300
200
100
ALLOWABLE PACKAGE POWER DISSIPATION in MILLIWATTS
0
PACKAGE
SUFFIX "LH"
R
θJA
= 228°C/W
20 60 100 140
40 80 120 180
PACKAGE
SUFFIX "UA"
R
θJA
= 165°C/W
TEMP.
CODE "E"
AMBIENT TEMPERATURE in °°°°C
TEMP.
CODE "L"
160
Dwg. GH-046-9
NOTE – Allowable package power dissipation will not be exceeded
unless Absolute Maximum Ratings (page 1) are exceeded.
LATCH
GROUND
Dwg. FH-020-5
Package Designator ‘UA’ Pinning
(SIP)
X
V
DD
1
SUPPLY
32
GROUND
Dwg. PH-016
OUTPUT
Pinning is shown viewed from branded side.
3
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
Copyright © 2003 Allegro MicroSystems, Inc.
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3213
AND
3214
MICROPOWER,
ULTRA-SENSITIVE
HALL-EFFECT SWITCHES
ELECTRICAL CHARACTERISTICS: unless otherwise noted
over operating voltage and temperature range.
Limits
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Supply Voltage Range V
Output Leakage Current I
Output On Voltage V
Awake Time t
Period t
DD
OFF
OUT
awake
period
Operating
V
OUT
I
OUT
A3213xx – 240 360 µs
A3214xx – 60 90 ms
Duty Cycle d.c. A3213xx – 25 – %
A3214xx – 0.10 – %
Chopping Frequency f
Supply Current I
C
DD(EN)
I
DD(DIS)
I
DD(AVG)
Chip awake (enabled) – – 2.0 mA
Chip asleep (disabled) – – 8.0 µA
A3213xx – 460 850 µA
A3214xx – 11 22 µA
1)
= 5.5 V, B
RPN
< B < B
RPS
2.4 3.0 5.5 V
– <1.0 1.0 µA
= 1 mA, VDD = 3.0 V – 100 300 mV
–6090µs
– 340 – kHz
ESD, Human Body Model – Per CDF-AEC-Q100-002 5.0 – – kV
ESD, Machine Model – Per JESD22-A115 350 – – V
NOTES: 1. Operate and release points will vary with supply voltage.
= operate point (output turns ON); B
2. B
OPx
= release point (output turns OFF).
RPx
3. Typical Data is at TA = +25°C and VDD = 3.0 V and is for design information only.
MAGNETIC CHARACTERISTICS: over operating voltage and temperature range.
Limits
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Operate Points B
Release Points B
Hysteresis B
OPS
B
OPN
RPS
B
RPN
hys
NOTES: 1. As used here, negative flux densities are defined as less than zero (algebraic convention) and -50 G is less than +10 G.
2. B
= operate point (output turns ON); B
OPx
3. Typical Data is at TA = +25°C and VDD = 3.0 V and is for design information only.
4. 1 gauss (G) is exactly equal to 0.1 millitesla (mT).
South pole to branded side – 42 70 G
North pole to branded side -70 -48 – G
South pole to branded side 10 32 – G
North pole to branded side – -38 -10 G
|B
- B
OPx
= release point (output turns OFF).
RPx
|–10–G
RPx
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