AIWA NSB9435T1 Service Manual
NSB9435T1
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Preferred Device
High Current Bias Resistor
Transistor
PNP Silicon
Features
• Collector −Emitter Sustaining Voltage −
V
CEO(sus)
= 30 Vdc (Min) @ I
= 10 mAdc
C
• High DC Current Gain −
h
FE
= 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
V
= 0.275 Vdc (Max) @ IC = 1.2 Adc
CE(sat)
= 0.55 Vdc (Max) @ IC = 3.0 Adc
• SOT−223 Surface Mount Packaging
• ESD Rating − Human Body Model: Class 1B
− Machine Model: Class B
• Pb−Free Package is Available
MAXIMUM RATINGS (T
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
ППППППППППП
Base Current − Continuous
Collector Current − Continuous
Total Power Dissipation @ TC = 25_C
ППППППППППП
Derate above 25_C
Total PD @ TA = 25_C mounted on 1″ sq.
ППППППППППП
(645 sq. mm) Collector pad on FR−4 bd
material
ППППППППППП
Total PD @ TA = 25_C mounted on 0.012″
ППППППППППП
sq. (7.6 sq. mm) Collector pad on FR−4 bd
material
ППППППППППП
Operating and Storage Junction
Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 5
= 25°C unless otherwise noted)
C
Rating Symbol Value Unit
− Peak
V
CEO
V
V
P
TJ, T
CB
EB
I
B
I
C
D
Ï
Ï
Ï
Ï
stg
30
45
± 6.0
Ï
1.0
3.0
Vdc
Vdc
Vdc
Ï
Adc
Adc
5.0
3.0
Ï
24
1.56
Ï
Ï
0.72
Ï
Ï
–55 to
W
Ï
mW/_C
W
Ï
Ï
W
Ï
Ï
_C
+150
1 Publication Order Number:
http://onsemi.com
POWER BJT
IC = 3.0 AMPERES
BV
V
CE(sat)
COLLECTOR 2,4
BASE
1
A = Assembly Location
Y = Year
W = Work Week
9435R = Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
NSB9435T1 SOT−223 1000/Tape & Reel
NSB9435T1G SOT−223
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
= 30 VOLTS
CEO
= 0.275 VOLTS
EMITTER 3
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
9435R G
G
1
(Pb−Free)
1000/Tape & Reel
†
NSB9435T1/D
NSB9435T1
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THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resist ance
Junction−to−Case
Junction−to−Ambient on 1″ sq.(645 sq. mm) Collector pad on FR−4 board material
Junction−to−Ambient on 0.012″ sq. (7. 6 sq. mm) Collector pad on FR−4 board material
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 s T
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
ППППППППППППППППППППП
(IC = 10 mAdc, IB = 0 Adc)
V
R
q
JC
R
q
JA
R
q
JA
L
CEO(sus)
ÏÏ
Ï
30
42
80
174
260
−
Ï
Ï
−
_C/W
_C
Vdc
Emitter−Base Voltage
(IE = 50 mAdc, IC = 0 Adc)
ППППППППППППППППППППП
Collector Cutoff Current
(VCE = 25 Vdc)
ППППППППППППППППППППП
(VCE = 25 Vdc, TJ = 125°C)
Emitter Cutoff Current
(VBE = 5.0 Vdc)
ППППППППППППППППППППП
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
ППППППППППППППППППППП
(IC = 3.0 Adc, IB = 0.3 Adc)
Base−Emitter Saturation Voltage
ППППППППППППППППППППП
(IC = 3.0 Adc, IB = 0.3 Adc)
Base−Emitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
ППППППППППППППППППППП
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
ППППППППППППППППППППП
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
ППППППППППППППППППППП
Resistor
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
V
EBO
ÏÏ
I
CER
ÏÏ
I
EBO
ÏÏ
V
CE(sat)
ÏÏ
V
BE(sat)
ÏÏ
V
BE(on)
ÏÏ
h
FE
ÏÏ
ÏÏ
R1
C
ob
6.0
Ï
−
Ï
−
−
Ï
−
−
Ï
−
Ï
−
−
Ï
125
Ï
110
90
Ï
7.5
−
−
Ï
−
Ï
−
−
Ï
0.155
−
Ï
−
Ï
−Ï1.25
−Ï1.10
Ï
220
Ï
−
−
Ï
10
100
−
Ï
20
Ï
200
700
Ï
0.210
0.275
Ï
0.550
−
Ï
−
−
Ï
12.5
150
Vdc
mAdc
mAdc
Vdc
Vdc
Vdc
−
kW
pF
Input Capacitance
ППППППППППППППППППППП
(VEB = 8.0 Vdc)
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mA, VCE = 10 V, F
ППППППППППППППППППППП
= 1.0 MHz)
test
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. fT = |hFE| S f
test
http://onsemi.com
2
C
ib
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f
T
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Ï
−
−
Ï
135
110
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−
−
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pF
MHz
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