AIWA NSB9435T1 Service Manual

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Page 1

NSB9435T1

ÏÏÏ

Preferred Device

High Current Bias Resistor Transistor

PNP Silicon

Features

• Collector −Emitter Sustaining Voltage −

CEO(sus)

= 30 Vdc (Min) @ I

= 10 mAdc

• High DC Current Gain −

= 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc

• Low Collector −Emitter Saturation Voltage −

= 0.275 Vdc (Max) @ IC = 1.2 Adc

CE(sat)

= 0.55 Vdc (Max) @ IC = 3.0 Adc

• SOT−223 Surface Mount Packaging

• ESD Rating − Human Body Model: Class 1B

− Machine Model: Class B

• Pb−Free Package is Available

MAXIMUM RATINGS (T

Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage

ППППППППППП

Base Current − Continuous Collector Current − Continuous

Total Power Dissipation @ TC = 25_C

ППППППППППП

Derate above 25_C

Total PD @ TA = 25_C mounted on 1″ sq.

ППППППППППП

(645 sq. mm) Collector pad on FR−4 bd material

ППППППППППП

Total PD @ TA = 25_C mounted on 0.012″

ППППППППППП

sq. (7.6 sq. mm) Collector pad on FR−4 bd material

ППППППППППП

Operating and Storage Junction Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

April, 2006 − Rev. 5

= 25°C unless otherwise noted)

Rating Symbol Value Unit

− Peak

CEO

V V

TJ, T

stg

30 45

± 6.0

1.0

3.0

Vdc Vdc Vdc

Adc Adc

5.0

3.0

1.56

0.72

–55 to

mW/_C

+150

1 Publication Order Number:

http://onsemi.com

POWER BJT

IC = 3.0 AMPERES

CE(sat)

COLLECTOR 2,4

BASE

A = Assembly Location Y = Year W = Work Week 9435R = Device Code G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

NSB9435T1 SOT−223 1000/Tape & Reel NSB9435T1G SOT−223

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

= 30 VOLTS

CEO

= 0.275 VOLTS

EMITTER 3

SOT−223

CASE 318E

STYLE 1

MARKING DIAGRAM

AYW

9435R G

(Pb−Free)

1000/Tape & Reel

†

NSB9435T1/D

Page 2

NSB9435T1

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resist ance

Junction−to−Case Junction−to−Ambient on 1″ sq.(645 sq. mm) Collector pad on FR−4 board material Junction−to−Ambient on 0.012″ sq. (7. 6 sq. mm) Collector pad on FR−4 board material

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 s T

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

ППППППППППППППППППППП

(IC = 10 mAdc, IB = 0 Adc)

JA L

CEO(sus)

ÏÏ

42 80

174 260

−

_C/W

Vdc

Emitter−Base Voltage

(IE = 50 mAdc, IC = 0 Adc)

ППППППППППППППППППППП

Collector Cutoff Current

(VCE = 25 Vdc)

ППППППППППППППППППППП

(VCE = 25 Vdc, TJ = 125°C)

Emitter Cutoff Current

(VBE = 5.0 Vdc)

ППППППППППППППППППППП

ON CHARACTERISTICS (Note 1) Collector−Emitter Saturation Voltage

(IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc)

ППППППППППППППППППППП

(IC = 3.0 Adc, IB = 0.3 Adc)

Base−Emitter Saturation Voltage

ППППППППППППППППППППП

(IC = 3.0 Adc, IB = 0.3 Adc)

Base−Emitter On Voltage

(IC = 1.2 Adc, VCE = 4.0 Vdc)

ППППППППППППППППППППП

DC Current Gain

(IC = 0.8 Adc, VCE = 1.0 Vdc)

ППППППППППППППППППППП

(IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc)

ППППППППППППППППППППП

Resistor

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)

EBO

ÏÏ

CER

ÏÏ

EBO

ÏÏ

CE(sat)

ÏÏ

BE(sat)

ÏÏ

BE(on)

ÏÏ

6.0

−

125

110

7.5

−

0.155

−

−Ï1.25

−Ï1.10

220

−

100

−

200

700

0.210

0.275

0.550

−

12.5

150

Vdc

mAdc

Vdc

−

Input Capacitance

ППППППППППППППППППППП

(VEB = 8.0 Vdc)

Current−Gain − Bandwidth Product (Note 2)

(IC = 500 mA, VCE = 10 V, F

ППППППППППППППППППППП

= 1.0 MHz)

test

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. fT = |hFE| S f

test

http://onsemi.com

ÏÏ

−

135

110

−

MHz

Page 3

0.3

, COLLECTOR−EMITTER

1000

V, VOLTAGE (V)

BE(on)

, DC CURRENT GAIN

0.25

0.15

0.05

SATURATION VOLTAGE (V)

CE(sat)

0.2

0.1

0.001 0.01 0.1 IB, BASE CURRENT (mA)

Figure 1. Collector Saturation Region

IC = 3.0 A

1.2 A

0.8 A

0.5 A

0.25 A

NSB9435T1

100

, DC CURRENT GAIN

0.1 1 10

TA = 150°C

25°C

−55°C

VCE = 1.0 V

IC, COLLECTOR CURRENT (A)

Figure 2. DC Current Gain

1000

100

1.0E+00

TA = 150°C

25°C

−55°C

VCE = 4.0 V

0.1 1 10 IC, COLLECTOR CURRENT (A)

Figure 3. DC Current Gain Figure 4. “ON” Voltages

BE(sat)

CE(sat)

BE(sat)

CE(sat)

V, VOLTAGE (V)

0.1

0.01

1.0E−01 1.0E+00 1.0E+0 IC, COLLECTOR CURRENT (A)

1.2

0.8

−55°C 25°C

IC/IB = 10

1.0E−01

1.0E−02

1.0E+001.0E−01

IC, COLLECTOR CURRENT (A)

Figure 5. “ON” Voltages

IC/IB = 50

1.0E+01

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TA = 155°C

V, VOLTAGE (V)

0.6

0.4

0.2

0.1 1

IC, COLLECTOR CURRENT (A)

Figure 6. V

Voltage

Page 4

NSB9435T1

4.0

, POWER DISSIPATION (WATTS)

1000

100

, OUTPUT CAPACITANCE (pF)

f = 1 MHz TA = 25°C

0.1 1 100 VR, REVERSE VOLTAGE (V)

Figure 7. Output Capacitance

3.0 T

2.0

1.0 T

50 75 100 125

T, TEMPERATURE (°C)

0.5 ms

1.0

0.1

0.01

, COLLECTOR CURRENT (A)

0.001

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

5.0 ms

100 ms

BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT

1.00.1

10 100

Figure 8. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate I

− V

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 8 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T v 150_C. T

may be calculated from the data in

J(pk)

Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.

J(pk)

1.0 D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.001

RESISTANCE (NORMALIZED)

0.0001

r(t), EFFECTIVE TRANSIENT THERMAL

Figure 9. Power Derating

0.001

0.01 0.10.0001

(t) = r(t) q

qJA = 174°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

− TA = P

J(pk)

t, TIME (seconds)

Figure 10. Thermal Response

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(pk) qJA

(pk)

(t)

10 1001.0

DUTY CYCLE, D = t1/t

1000

Page 5

NSB9435T1

PACKAGE DIMENSIONS

SOT−223 (TO−261)

CASE 318E−04

ISSUE L

0.08 (0003)

123

SOLDERING FOOTPRINT*

0.15

2.0

0.079

3.8

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.02 0.06 0.10 0.001

b 0.60 0.75 0.89 0.024

b1 2.90 3.06 3.20 0.115

c 0.24 0.29 0.35 0.009

D 6.30 6.50 6.70 0.249

E 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087

e1 L1 1.50 1.75 2.00 0.060

STYLE 1:

PIN 1. BASE

MILLIMETERS

1.50 1.63 1.75 0.060

0.85 0.94 1.05 0.033

6.70 7.00 7.30 0.264

0° 10° 0° 10°

− −

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHES

NOM MAX

0.064 0.068

0.002 0.004

0.030 0.035

0.121 0.126

0.012 0.014

0.256 0.263

0.138 0.145

0.091 0.094

0.037 0.041

0.069 0.078

0.276 0.287

2.3

0.091

2.3

0.091

6.3

0.248

2.0

0.079

1.5

0.059

SCALE 6:1

inches

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

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For additional information, please contact your local Sales Representative.

NSB9435T1/D

AIWA NSB9435T1 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual