AGERE D1861B050, D1861B040, D1861B023 Datasheet

Preliminary Data Sheet

ESD

PROTECTION

TEC

7654 321

–––++

RF

R

MATCH

45

Ω

R

TH

10 kΩ @ 25 °C

ISOLATOR

RF CONNECTOR

MPD

DFB

CHOKE

D1861B 10 Gbits/s 1310 nm DML Module (–3 dBm)

Description

The D1861B direct-modulated laser (DML) module is
a cost-effective solution for 10 Gbits/s digital trans­mission up to 12 km using traditional intracity

SMF-28

wavelength eliminates the need for concern about
dispersion control over most installed intracity fiber
plants. The package contains a high-speed DFB
laser chip, thermoelectric cooler, thermistor, optical
isolator, and a rear-facet monitor photodiode, which
allows for external optical power control.

†

single-mode fiber links. The 1310 nm

March 2001

Features

■

Direct-modulated 1310 nm laser module character­ized for use in 10 Gbits/s operations up to 12 km

■

Av erage optical output power, –3 dBm typical

■

Temperature stabilized with internal thermoelectric
cooler (TEC), enabling operation within a wide
temperature range of –5 °C to +80 °C

■

Hermetically sealed optics, isolator on TEC

■

GPO*

RF connector

■

Single-mode fiber pigtail

■

High relaxation frequency at low bias

Applications

■

SR-1

■

SONET/SDH low-cost metro applications

■

High-speed data communications

■

DWDM equipment drop-side applications

*

GPO

is a trademark of Gilbert Engineering Co., Inc.

Figure 1. D1861B DML Electrical Schematic

Pin Information

Table 1. Pin Descriptions

Pin No. Description

1Thermistor
2Thermistor

3 Laser Cathode (–), dc Bias
4 MPD Anode, (Negative Bias MPD)
5 MPD Cathode
6 Thermoelectric Cooler (+)
7 Thermoelectric Cooler (–)

1. Laser anode is case ground mAp-p drive current.

2. A positive current into this pin cools the laser.

†

SMF-28

is a trademark of Corning Incorporated.

1-1157(F)

1

2

Preliminary Data Sheet

D1861B 10 Gbits/s 1310 nm DML Module (–3 dBm) March 2001

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso­lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability. RF input shall be ac coupled. It is recommended that a series induc­tor of 100

Operating Temperature Range T
Storage Case Temperature Range Tstg — –40 85
Laser Forward Bias — TEC On — 150 mA
Pin 3, Max Positive Voltage
Pin 3, Max Positive Current
Reverse Voltage Photodiode V
TEC Current I

1. RF connector ac coupled.

µ

H be placed external to the device on Pin 3.

Parameter Symbol Condition Min Max Unit

OP

1
1

V

R

I

R

RPD

TEC

— –40 80

——1V
— — 200 mA
——20V
——1.7A

°

C

°

C

Electrical/Optical Characteristics

Table 2. Electrical and Optical Characteristics

Parameter S ymbol Condition Min Typ Max Unit

Average Optical Output Power P

Threshold Current (BOL) I
Wavelength
Wavelength Tuning Coefficient
External Efficiency

∆λ

O

TH

λ

T

η

ac Side-mode Suppression Ratio SMSR I
Optical Isolation — — 32 — — dB
High-frequency Cutoff (3 dB) F
Low-frequency Cutoff (3 dB) F
RF Return Loss, 50 Ω

HIGH

LOW

IS

II

11

(0.1 GHz—8 GHz)
Rise/Fall Time, 10%—90% t
Thermoelectric Cooler Current I
Thermistor Resistance R

R/tF
TEC

TH

Thermistor Coef fic ient — — — –4.4 — %/°C
Monitor Photodiode Current I

1. 10 Gbits/s PRBS 223–1, ER = 8.2 dB, @ IOP, TOP = 25 °C, typical 50 mAp–p drive current.

2. Measurements made with 100 µH in series with pin 3 (laser cathode).

MPD

(Case temperature, –5 °C to +80 °C; laser temperature, 25 °C
unless otherwise noted.)

I

OP = ITH

+ 30 mA –5.5

0.28

—
—

–1.5

0.71

dBm

—2—30mA
— 1290 — 1320 nm
— — 0.085 — nm/°C
—9.4—23.8mW/A

35 — — dB

14 — — GHz
——30kHz
10 — — dB

— — 50 ps

I
I

OP

OP
OP

OP

—

2
2

1

———1.3A
— 9.5 10 10.5 k

I

OP

40 — 1500

mW

µ

Ω

A

2

Agere Systems Inc.