AGERE D1861A040, D1861A023 Datasheet

D1861A 10 Gbits/s 1310 nm DML Module

ESD

PROTECTION

TEC

7654 321

–––++

RF

R

MATCH

45

Ω

R

TH

10 kΩ @ 25 °C

ISOLATOR

RF CONNECTOR

MPD

DFB

CHOKE

Description

The D1861A direct-modulated laser (DML) module is
a cost-effective solution for 10 Gbits/s digital trans­mission up to 50 km using traditional intracity SMF28
single-mode fiber links. The 1310 nm wavelength
eliminates the need for concern about dispersion
control over most installed intracity fiber plants. The
package contains a high-speed DFB laser chip, ther­moelectric cooler, thermistor, optical isolator, and a
rear-facet monitor photodiode, which allows for exter­nal optical power control.

Data Sheet

August 2000

Features

■

Direct-modulated 1310 nm laser module character­ized for use in 10 Gbits/s operations up to 50 km

■

Av erage optical output power, 4 mW min.

■

Temperature stabilized with internal thermoelectric
cooler (TEC), enabling operation within a wide
temperature range of –40 °C to +80 ° C

■

Hermetically sealed optics, isolator on TEC

■

GPO*

RF connector

■

Single-mode fiber pigtail

■

High relaxation frequency at low bias

Applications

■

SONET/SDH low-cost metro applications

■

High-speed data communications

■

DWDM equipment drop-side applications

*

GPO

is a trademark of Gilbert Engineering Co., Inc.

Figure 1. D1861A DML Electrical Schematic

Pin Information

Table 1. Pin Descriptions

Pin No. Description

1Thermistor
2Thermistor

3 Laser Cathode (–), dc Bias
4 MPD Anode, (Negative Bias MPD)
5 MPD Cathode
6 Thermoelectric Cooler (+)
7 Thermoelectric Cooler (–)

1. Laser anode is case ground mAp-p drive current.

2. A positive current into this pin cools the laser.

1-1157(F)

1

2

Data Sheet

D1861A 10 Gbits/s 1310 nm DML Module August 2000

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso­lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability. RF input shall be ac coupled. It is recommended that a series induc­tor of 100 µH be placed external to the device on Pin 3.

Parameter Symbol Condition Min Max Unit

Operating Temperature Range T

OP

Storage Case Temperature Range Tstg — –40 85 °C
Laser Forward Bias — TEC On — 150 mA
Pin 3, Max. Positive Voltage
Pin 3, Max. Positive Current
Reverse Voltage Photodiode V
TEC Current I

1. RF connector ac coupled.

1
1

V

R

I

R

RPD

TEC

— –40 80 °C

——1V
— — 200 mA
——20V
——1.7A

Electrical/Optical Characteristics

T able 2. Electrical and Optical Characteristics

Parameter S ymbol Condition Min Typ Max Unit

Average Optical Output Power P
Threshold Current (BOL) I

O

TH

Wavelength λ — 1290 — 1320 nm
Wavelength Tuning Coefficient ∆λ

T

External Efficiency η — 0.125 0.15 — W/A
ac Side-mode Suppression Ratio SMSR I
Chromatic Dispersion Penalty

——

(50 km, SMF28, 200 ps/nm)
Optical Isolation — — 32 — — dB
High-frequency Cutoff (3 dB) F
Low-frequency Cutoff (3 dB) F
RF Return Loss, 50 Ω

HIGH

LOW

IS

II

11

(0.1 GHz—8 GHz)
Rise/Fall Time, 10%—90% t
Thermoelectric Cooler Current I
Thermistor Resistance R

R/tF
TEC

TH

Thermistor Coef fic ient — — — –4.4 — %/°C
Monitor Photodiode Current I

1. 10 Gbits/s PRBS 223–1, ER = 8.2 dB, @ IOP, TOP = 25 °C, typical 50 mAp–p drive current.

2. Measurements made with 100 µH in series with pin 3 (laser cathode).

MPD

(Case Temperature, –40 °C to + 80 °C; Laser T emperature, 25 °C

unless otherwise noted.)

I

OP = ITH

+ 30 mA 4 — — mW

—2—30mA

— — 0.085 — nm/°C

35 — — dB
——1.0dB

14 — — GHz
——30kHz
10 — — dB

— — 50 ps

I
I

OP

OP
OP

OP

—

1

2
2

1

———1.3A
— 9.5 10 10.5 kΩ

I

OP

40 — 1500 µA

2

Agere Systems I nc.