AGERE 269-D-280-F1480-C, 269-D-280-F1480-B, 269-D-280-F1480-A, 269-D-270-F1480-C, 269-D-270-F1480-B Datasheet

Data Sheet

June 2001

269-Type 1480 nm Pump Laser Module

The 269-type pump laser module is designed as a continuouswave (CW) optical pump source for erbium-doped fiber amplifiers.

Features

■High-coupled rated output power up to 280 mW, CW

■Wide environmental range

■Field-proven packaging technology

■InGaAsP/InP high-power, strained multiple quan- tum-well (MQW) chip design

■Internal optical isolator (optional)

■Internal thermoelectric cooler (TEC)

■InGaAs PIN photodetector back-facet monitor

■Single-mode and polarization-maintaining fiber pigtails

■Compact, 14-pin butterfly package

■Industry compatible package and pinout

Applications

■ Erbium-doped fiber amplifiers (EDFA)

Description

The 269-type pump laser module represents a family of thermoelectrically cooled, high-power lasers. They are designed as continuous-wave (CW) optical pump sources for dense wavelength-division multiplexing (DWDM) EDFA applications.

The laser modules incorporate a high-power, quan- tum-well laser chip that achieves fiber powers up to 280 mW.

An integral thermoelectric cooler (TEC) stabilizes the laser at room temperature and, combined with a hermetic environment, allows the device to achieve high-power operation over the extended temperature range of 0 °C to 75 °C. An internal InGaAs PIN photodiode, mounted behind the laser diode, functions as the laser detector and monitors light emissions from the rear facet of the laser.

The 269-type module is offered in a 14-pin, hermetic butterfly package.

	Data Sheet
269-Type 1480 nm Pump Laser Module	June 2001

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

Parameter	Symbol	Min	Max	Unit
Operating Case Temperature Range	TC	0	75	°C
Storage Case Temperature Range	Tstg	–40	85	°C
Laser Forward Bias (TEC on):	IF
PO = 120 mW—150 mW		—	1000	mA
PO = 160 mW—210 mW		—	1500	mA
PO = 220 mW—280 mW		—	1900	mA
Laser Reverse Voltage	VR	—	2	V
Photodiode Reverse Voltage	VRMON	—	20	V
TEC Current	ITEC	—	2.2	A
TEC Voltage	VTEC	—	5.0	V
Temperature Sensor Current	ITS	—	5	mA
Laser Diode Operating Chip Temperature	TLD	—	40	°C

Handling Precautions

Electrostatic Discharge

CAUTION: This device is susceptible to damage as a result of electrostatic discharge (ESD). Take proper precautions during both handling and testing. Follow guidelines such as EIA * Standard EIA 625.

Agere Systems Inc. employs a human-body model (HBM) for ESD-susceptibility testing and protection-design evaluation. ESD voltage thresholds are dependent on the critical parameters used to define the model. A standard HBM (resistance = 1.5 kΩ, capacitance = 100 pF) is widely used and, therefore, can be used for comparison purposes. The HBM ESD withstand voltage established for the 269-type laser pump module is ±500 V.

* EIA is a registered trademark of The Electronic Industries Association.

2	Agere Systems Inc.

Data Sheet
June 2001	269-Type 1480 nm Pump Laser Module

Electrical/Optical Characteristics

Table 1. Electrical/Optical Characteristics (All performance parameters are specified for IF, OP, TSET = 25 °C, TCASE ~ 25 °C, unless otherwise specified.)

Parameter	Symbol			Conditions		Min	Typ				Max		Unit
Operating Optical Power	PO				—	120	—			280			mW
Center Wavelength	λC				—	1465	1480			1490			nm
RMS Spectral Width	Δλ				PO	—	4			10			nm
BOL Operating Laser Forward Current:	IF, OP BOL
PO = 120 mW					—	—	—			550			mA
PO = 130 mW					—	—	—			600			mA
PO = 140 mW					—	—	—			600			mA
PO = 150 mW					—	—	—			600			mA
BOL Operating Laser Forward Current:	IF, OP BOL
PO = 160 mW					—	—	—			650			mA
PO = 170 mW					—	—	—			700			mA
PO = 180 mW					—	—	—			700			mA
PO = 190 mW					—	—	—			750			mA
PO = 200 mW					—	—	—			800			mA
BOL Operating Laser Forward Current:	IF, OP BOL
PO = 210 mW					—	—	—			850			mA
PO = 220 mW					—	—	—			900			mA
PO = 230 mW					—	—	—			950			mA
PO = 240 mW					—	—	—			1000			mA
PO = 250 mW					—	—	—			1000			mA
PO = 260 mW					—	—	—			1100			mA
PO = 270 mW					—	—	—			1100			mA
PO = 280 mW					—	—	—			1100			mA
EOL Operating Laser Forward Current	IF, OP EOL				—	—	—			1.15 x			mA
										IF, OP BOL
EOL Laser Diode Forward Voltage	VR			IF, OP EOL		—	2.3			3.0			V
Module Optical Isolation	ISO			EOL Over		30	—				—		dB
(optional feature)				TCASE RANGE
Polarization Extinction Ratio	PER				—	13	—				—		dB
Table 2. Monitor Photodiode Characteristics (All test parameters are specified for IF, OP, TSET = 25 °C,
	TCASE ~ 25 °C unless otherwise specified.)
Parameter		Symbol			Conditions			Min			Max		Unit
Monitor Diode Current		IBF				—		200			2000		μA
Monitor Diode Dark Current		ID			VR = –5 V, IF = 0			—			100		nA

Agere Systems Inc.

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