AGERE 269-D-280-M-14xx-C, 269-D-280-M-14xx-B, 269-D-280-M-14xx-A, 269-D-280-D-14xx-C, 269-D-270-M-14xx-C Datasheet

269-Type 14xx nm DFB Pump Laser Module

Data Sheet

June 2001

The 269-type DFB pump laser module is designed as a

continuous-wave (CW) optical pump source for erbiu m-do ped

fiber amplifiers.

Features

■

Low relative intensity noise (RIN)

■

High-coupled rated output power up to 280 mW,

CW

■

Wide environmental range

■

Field-proven packaging technology

■

InGaAsP/InP high-power, strained multiple quan-

tum-well (MQW), distributed-feedback (DFB) laser

chip design

■

Internal optical isolator (optional)

■

Internal thermoelectric cooler (TEC)

■

InGaAs PIN photodetector back-facet monitor

■

Single-mode and polarization-maintaining fiber pig-

tails

■

Compact, 14-pin butterfly package

■

Industry compatible package and pinout

Applications

■

Raman pump modules (RPM), copropagating and

counterpropagating

■

Erbium-doped fiber amplifiers (EDFA)

Description

The 269-type DFB pump laser module represen ts a

family of thermoelectrically cooled, high-power

lasers. These devices achieve stable wavelength

performance within the 1420 nm to 1510 nm range,

over the full operating temperature range. They are

designed as continuous-wave (CW) optical pump

sources for dense wavelength-division multiplexing

(DWDM) EDFA and Raman applications operating in

the C- and L-bands.

These new high-power DFB products represent a

breakthrough in 14xx nm pump laser technology by

integrating the beneficial characteristics of an exter-

nal FBG laser design (such as stimulated Brillouin

scattering suppression) with the superior relative-

intensity noise (RIN) performance of a DFB laser.

The combination of both characteristics is critical to

enable copropagating Raman pumping, which dis-

tributes gain over the first few kilometers of the trans-

mission fiber. The typical RIN value Agere Systems’

DFB lasers is –158 dB/Hz, a major improvement over

comparable external FBG-stabilized lasers with a

typical RIN of –125 dB/Hz. Integrating wavelength

stabilization into the chip improves the stabilization

over operating temperature and thereby eliminates

the need for an external FBG .

The laser modules incorporate a high-power, quan-

tum-well laser chip that achieves fiber powers up to

280 mW.

An integral thermoelectric cooler (TEC) stabilizes the

laser at room temperature and, combined with a her-

metic environment, allows the device to achieve

high-power operation over the extended temperature

range of 0 °C to 75 °C. An internal InGaAs PIN pho-

todiode, mounted behind the laser diode, functions

as the laser detector and monitors light emissions

from the rear facet of the laser.

The 269-type DFB module is offered in a 14-pin, her-

metic butterfly package.

Data Sheet

269-Type 14xx nm DFB Pump Laser Module June 2001

2

Agere Systems Inc.

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are abso-

lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess

of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended

periods can adversely affect device reliability.

Handling Precautions

Electrostatic Discharge

CAUTION: This device is susceptible to damage as a result of electrostatic discharge (ESD). Take proper

precautions during both handling and testing. Follow guidelines such as

EIA

*

Standard

EIA

625.

Agere Systems Inc. employs a human-body model (HBM) for ESD-susceptibility testing and protection-design eval-

uation. ESD voltage thresholds are dependent on the critical parameters used to define the model. A standard

HBM (resistance = 1.5 kΩ, capacitance = 100 pF) is widely used and, therefore, can be used for comparison pur-

poses. The HBM ESD withstand voltage established for the 269-type laser pump module is ±500 V.

*

EIA

is a registered trademark of The Electronic Industries Association.

Parameter Symbol Min Max Unit

Operating Case Temperature Range T

C

075°C

Storage Case Temperature Range T

stg

–40 85 °C

Laser Forward Bias (TEC on):

P

O

= 120 mW—150 mW

P

O

= 160 mW—210 mW

P

O

= 220 mW—280 mW

I

F

—

—

—

1000

1500

1900

mA

mA

mA

Laser Reverse Voltage V

R

—2V

Photodiode Reverse Voltage V

RMON

—20V

TEC Current I

TEC

—2.2A

TEC Voltage V

TEC

—5.0V

Temperature Sensor Current I

TS

—5mA

Laser Diode Operating Chip Temperature T

LD

—40°C

Data Sheet

June 2001 269-Type 14xx nm DFB Pump Laser Module

3

Agere Systems Inc.

Electrical/Optical Characteristics

Table 1. Electrical/Optical Characteristics

(All performance parameters are specified for I

F, OP

, T

SET

= 25 °C,

T

CASE

~ 25 °C, unless otherwise specified.)

Parameter Symbol Conditions Min Typ Max Unit

Operating Optical Power P

O

— 120 — 280 mW

Wavelength:

Target Wavelength

Center Wavelength

λt

λ

C

—

0 °C—70 °C

1420

λt – 1.0

—

—

1510

λt + 1.0

nm

nm

RMS Spectral Width:

Single Mode

Multimode

∆λ P

O

—

—

1.0

0.2

5.0

0.3

MHz

nm

BOL Operating Laser Forward Current:

P

O

= 120 mW

P

O

= 130 mW

P

O

= 140 mW

P

O

= 150 mW

I

F, OP BOL

—

—

—

—

—

—

—

—

—

—

—

—

550

600

600

600

mA

mA

mA

mA

BOL Operating Laser Forward Current:

P

O

= 160 mW

P

O

= 170 mW

P

O

= 180 mW

P

O

= 190 mW

P

O

= 200 mW

I

F, OP BOL

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

650

700

700

750

800

mA

mA

mA

mA

mA

BOL Operating Laser Forward Current:

P

O

= 210 mW

P

O

= 220 mW

P

O

= 230 mW

P

O

= 240 mW

P

O

= 250 mW

P

O

= 260 mW

P

O

= 270 mW

P

O

= 280 mW

I

F, OP BOL

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

850

900

950

1000

1000

1100

1100

1100

mA

mA

mA

mA

mA

mA

mA

mA

EOL Operating Laser Forward Current I

F, OP EOL

———1.15 x

I

F, OP BOL

mA

EOL Laser Diode Forward Voltage V

R

I

F, OP

EOL — 2.3 3.0 V

Module Optical Isolation

(optional feature)

ISO EOL Over

T

CASE RANGE

30 — — dB

Polarization Extinction Ratio PER — 13 — — dB

Relative Intensity Noise RIN P

O

— –158 –150 dB/Hz

Table 2. Monitor Photodiode Characteristics

(All test parameters are specified for I

F, O P,

T

SET

= 25 °C,

T

CASE

~ 25 °C unless otherwise specified.)

Parameter Symbol Conditions Min Max Unit

Monitor Diode Current I

BF

— 200 2000 µA

Monitor Diode Dark Current

I

D

V

R

= –5 V, I

F

= 0 — 100 nA