Advanced Semiconductor Inc CBSL150 Datasheet

f = 960 MHz

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

ORDER CODE: ASI10586

The ASI CBSL150 is Designed for 900
MHz Class AB Cellular Base Station
Amplifiers.

FEATURES:

• Internal Input/Output Matching

• PG = 9.0 dB Typ. at 150 W/ 900 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

25 A
28 V
60 V

3.5 V

V
V
V
P

T

IC

CEO

CES

EBO

DISS

TJ

STG

300 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

CBSL150

PACKAGE STYLE .400 BAL FLG (C)

DIM

A
B
C
D
E
F
G
H
I
J
K
L
M
N

.080x45°

E

D

C

.1925

I

.780 / 19.81

1.335 / 33.91 1.345 / 34.16

.850 / 21.59 .870 / 22.10

A

B

F

G

H

N

MINIMUM

inches / mm

.220 / 5.59 .230 / 5.84

.120 / 3.05
.380 / 9.65

.003 / 0.08
.060 / 1.52
.082 / 2.08 .100 / 2.54

.210 / 5.33

.435 / 11.05

1.090 / 27.69

FULL R

J

MAXIMUM

inches / mm

.130 / 3.30
.390 / 9.91

.820 / 20.83

.007 / 0.18
.070 / 1.78

.205 / 5.21

.407 / 10.34.395 / 10.03

(4X).060 R

M

L

K

θθJC

CHARACTERISTICS T

0.6 OC/W

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 100 mA 26 V

CEO

BV

IC = 100 mA RBE = 200 Ω 35 V

CER

BV

IC = 50 mA 60 V

CES

BV

IE = 10 mA 3.5 V

EBO

I

VCE = 30 V 10 mA

CES

hFE VCE = 5.0 V IC = 1.0 A 30 45 120 ---

PG

IMD

VCC = 26 V P

= 150 W ICQ = 2 X 150 mA

OUT

ηηC

ψψ

VSWR = 5:1 at all phase angles No Degradation in Output Power

8.0

35

-28

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

dB

dBc

%