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查询ASI10584供应商
NPN SILICON RF POWER TRANSISTOR
CBSL60B
The ASI CBSL60B is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
146 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
8.0 A
60 V
28 V
3.5 V
1.2 OC/W
PACKAGE STYLE .450 BAL FLG (A)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
.060x45°
C
E
D
F
K
MINIMUM
inches / mm
.120 / 3.05
.455 / 11.56
.120 / 3.05 .130 / 3.30
.838 / 21.28 .850 / 21.59
1.095 / 27.81
.525 / 13.34 .535 / 13.59
.002 / 0.05
.055 / 1.40 .065 / 1.65
.080 . 2.03
.445 / 11.30
B
G
J
.055 / 1.40
.230 / 5.84
FULL R
A
H
.100x45°
P
M
L
MAXIMUM
inches / mm
.130 / 3.30
.785 / 19.94
.465 / 11.81
1.105 / 28.07
.005 / 0.15
.095 / 2.41
.195 / 4.95
.455 / 11.56
N
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 100 mA 60 V
CBO
BV
IC = 100 mA 28 V
CEO
BV
IE = 20 mA 3.5 V
EBO
I
VCE = 25 V 30 mA
CEO
hFE VCE = 5.0 V IC =3.0 A 25 80 ---
PG
VSRW VCC = 26 V f = 960 MHz
VCC = 26 V ICQ = 2 X 200 mA f = 960 MHz
P
= 60 W
OUT
8.5
5:1 ---
dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.