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NPN SILICON RF POWER TRANSISTOR
CBSL100
The ASI CBSL100 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
310 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
25 A
60 V
30 V
3.0 V
0.6 OC/W
PACKAGE STYLE .400 BAL FLG (C)
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
.080x45°
E
D
C
.1925
I
.780 / 19.81
1.335 / 33.91 1.345 / 34.16
.850 / 21.59 .870 / 22.10
A
B
F
G
H
N
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.120 / 3.05
.380 / 9.65
.003 / 0.08
.060 / 1.52
.082 / 2.08 .100 / 2.54
.210 / 5.33
.435 / 11.05
1.090 / 27.69
FULL R
J
MAXIMUM
inches / mm
.130 / 3.30
.390 / 9.91
.820 / 20.83
.007 / 0.18
.070 / 1.78
.205 / 5.21
.407 / 10.34.395 / 10.03
(4X).060 R
M
L
K
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 100 mA 60 V
CBO
BV
IC = 100 mA 30 V
CEO
BV
IE = 50 mA 3.0 V
EBO
I
VCE = 28 V 10 mA
CES
hFE VCE = 5.0 V IC = 3.0 A 15 70 ---
PG
IMD
ηηC
VCE = 24 V ICQ = 2 X 100 mA f = 960 MHz
P
= 100 W
OUT
9.0
45
-32
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
dB
dBc
%