SCD5817 THRU SCD5819
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere
PATENTED
PATENTED
PATENTED
0.091(2.30)
0.083(2.10)
0.049(1.25)
0.033(0.85)
0.049(1.25)
0.033(0.85)
*Dimensions in inches and (millimeters)
2010
.181(4.60)
.173(4.40)
.002(0.05)
R0.020(0.50)
0.049(1.25)
0.033(0.85)
TM
FEATURES
*Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
*For surface mounted applications
*Low profile package
*Built-in strain relief
*Metal to silicon rectifier , majority carrier conduction
*Low power loss , High efficiency
*High current capability , low VF
*High surge capacity
*For using in low voltage high frequency switching power supply,
inverters , free wheeling , and polarity protection applications
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Solder plated , solderable per MIL-STD-750,
Method 2026
Polarity : Laser marking
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage VRMS
Maximum DC blocking voltage VDC 20
Maximum average forward rectified current @TC=75oC
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0 A (NOTE 1)
Maximum instantaneous forward voltage at 3.0 A (NOTE 1) 0.75
Maximum DC reverse current
at rated DC blocking voltage
Typical Junction capacitance ( NOTE 2 )
Typical thermal resistance ( NOTE3 )
Operating junction and storage temperature range
NOTES :(1)Pulse test with PW=300usec , 1% duty cycle.
(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
(3)Thermal Resistance Junction to Ambient
@TA=25oC
@TA=100oC
SYMBOLS
VRRM
I (AV)
IFSM
VF
IR
CJ 110
R JA
TJ,TSTG
SCD5817 SCD5818
20 30
14 21
0.45 0.60
30
1.0
25
0.55
0.875 0.90
0.5
10
80
-50 to +125
SCD5819
40
28
40
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
mA
pF
o
C / W
o
C
REV. : 1
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES SCD5817 THRU SCD5819
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
1.0
Single Phase Half Wave
60HZ Resistive or Inductive
0.5
CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
SCD5818
1.00
SCD5817
SCD5819
30
8.3ms Single Half Sine-Wave
25
(JEDEC Method)
20
15
AMPERES
10
5
PEAK FORWARD SURGE CURRENT,
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
10
1.0
TJ=125oC
AMPERES
0.10
IINSTANTANEOUS FORWARD CURRENT,
0.01
TJ=25oC
0.10
0.01
TJ=25oC
INSTANTANEOUS REVERSE CURRENT, ( mA )
0 0.2 0.4 0.6 0.8 1.0 1.2
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
.001
0 20
40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
TJ = 25oC
100
JUNCTION CAPACITANCE, pF
REV. : 0
10
.1
1.0 4 10 100
REVERSE VOLTAGE, VOLTS
Zowie Technology Corporation