ZOWIE MMBTA42 Datasheet
Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
COLLECTOR
3
BASE
MMBTA42
1
2
SOT-23
1
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Vdc
Collector-Base Voltage Vdc
Emitter-Base Voltage Vdc
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
Derate above 25oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
(2)
TA=25oC
Symbol
PD
R
JA
PD
R
JA
TJ,TSTG
3
2
EMITTER
Value
300
300
6.0
500 mAdc
Max.
225
1.8
556
300
2.4
417
-55 to +150
mW / oC
o
C / W
mW / oC
o
C / W
Unit
Unit
mW
mW
o
C
DEVICE MARKING
MMBTA42=1D
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC= 1.0mAdc, IB=0 )
Collector-Base Breakdowe Voltage
( IC= 100uAdc, IE=0 )
Emitter - Base Breakdowe Voltage
( IE= 100 uAdc, IC=0 )
Collector Cutoff Current
( VCE= 200 Vdc, IE = 0 )
Emitter Cutoff Curretn
( VEB= 6.0 Vdc, IC=0 )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
(3)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min.
300
300
6.0
-
-
Max.
-
-
-
Unit
Vdc
Vdc
Vdc
0.1 uAdc
0.1
uAdc
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ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
( IC= 1.0 mAdc, VCE= 10 Vdc )
( IC= 10 mAdc, VCE= 10 Vdc )
( IC= 30 mAdc, VCE= 10 Vdc )
(3)
Symbol Min.
HFE
25
40
40
Max.
-
-
-
Unit
-
Collector-Emitter Saturation Voltage
( IC= 20 mAdc, IB= 2.0 mAdc )
Base-Emitter Saturation Voltage
( IC= 20 mAdc, IB= 2.0 mAdc )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC= 10 mAdc, VCE= 20 Vdc, f=100 MHZ )
Collector-Base Capacitance
( VCB= 20 Vdc, IE=0, f=1.0 MHZ )
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
VCE(sat) Vdc
VBE(sat) Vdc
fT
Ccb
- 0.5
- 0.9
50
-
3.0
-
MHZ
pF
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