Zowie Technology Corporation
Switching Transistor
NPN Silicon
BASE
1
COLLECTOR
3
2
EMITTER
MMBT4401
3
1
2
SOT-23
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC 600 mAdc
Value
Unit
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient 556
Total Device Dissipation Alumina Substrate,
(2)
TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient 417
Symbol
PD
R
JA
PD
JA
Junction and Storage Temperature
Max.
225
1.8
300
2.4
-55 to +150
Unit
mW
mW / oC
o
C / W
mW
mW / oC
o
C / WR
o
CTJ,TSTG
DEVICE MARKING
MMBT4401=2X
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC=1.0mAdc, IB=0 )
Collector-Base Breakdowe Voltage
( IC=0.1 mAdc, IE=0 )
Emitter-Base Breakdowe Voltage
( IE=0.1 mAdc, IC=0 )
Base Cutoff Current
( VCE=35 Vdc, VEB=0.4 Vdc )
Collector Cutoff Current
( VCE=35 Vdc, VEB=0.4 Vdc )
(3)
V(BR)CEO 40 - Vdc
V(BR)CBO
V(BR)EBO 6.0 - Vdc
IBEV - 0.1 nAdc
ICEX - 0.1 nAdc
Max.
60 -
Unit
Vdc
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ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
(3)
DC Current Gain
( IC=0.1 mAdc, VCE=1.0 Vdc )
( IC=1.0 mAdc, VCE=1.0 Vdc )
( IC=10 mAdc, VCE=1.0 Vdc )
( IC=150 mAdc, VCE=1.0 Vdc )
( IC=500 mAdc, VCE=2.0 Vdc )
Collector-Emitter Saturation Voltage
(3)
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc )
Base-Emitter Saturation Voltage
(3)
( IC=150 mAdc, IB=15 mAdc )
( IC=500 mAdc, IB=50 mAdc )
SMALL-SIGNAL CHARACTERISTIC
Symbol Min.
20
HFE
40
80
100
40
VCE(sat) Vdc
VBE(sat) Vdc
0.75
Max.
Unit
-
-
-
-
300
-
-
-
0.4
0.75
0.95
-
1.2
Current-Gain-Bandwidth Product
( IC=20 mAdc, VCE=10 Vdc, f=100 MHZ )
Collector-Base Capacitance
( VCB=5.0 Vdc, IE=0, f=1.0 MHZ )
Emitter-Base Capacitance
( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
Voltage Feedback Ratio
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
Small-Signal Current Gain
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
Output Admittance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
( VCC=30 Vdc, VBE=2.0 Vdc,
IC=150 mAdc, IB1=15 mAdc )
( VCC=30 Vdc,
IC=150 mAdc, IB1=IB2=15 mAdc )
fT
Ccb
Ceb pF
250
-
- 30
6.5
-
MHZ
pF
hie k ohms1.0 15
hre
0.1 8.0
X 10
hfe -40 500
hoe u mhos1.0 30
td - 15
tr
ts
tf
- 20
-
-
225
30
nS
nS
-4
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%.
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