ZOWIE LL4448, LL4148 Datasheet
Cathode Indification
0.146(3.70)
0.130(3.30)
LL4148, LL4448
SILICON EPITAXIAL PLANAR DIODES
Reverse Voltage 100 Volts Peak Forward Current - 500mA
SOD-80
FEATURES
0.063(1.60)
0.055(1.40)
0.012(0.30)
*Electrical data identical with the devices 1N4148
*and 1N4448 respectively
*Extreme fast switches
Glass case
Mini MELF / SOD 80
JEDEC DO 213AA
*Dimensions in inches and (millimeters)
PARAMETER Test Conditions
Repetitive Peak Reverse Voltage
Reverse Voltage
Peak Forward Surge Current
Repetitive Peak Forward Current
Forward Current I
Average Forward Current IFAV 150 mA
Power Dissipation
Junction Temperature
Storage Temperature Range
Junction Ambient
on PC Board 50mm x 50mm x 1.6mm R
technical drawings
accarding to DIN
specifications
Case : Mini MELF SOD-80 Glass Case
Weight : approx. 0.05 gram
ABSOLUTE MAXIMUM RATINGS ( TJ=25oC )
SYMBOL
V
RRM
V
R
tp = 1 us
VR = 0
I
I
T
FSM
FRM
F
PV
T
STG
J
MAXIMUM THERMAL RESISTANCE ( TJ=25oC )
SYMBOL VALUEPARAMETER TEST CONDITIONS
JA 500 K / W
VALUE
100
75
2
500
300 mA
500
175
-65 to +175
UNIT
V
V
A
mA
mW
o
o
UNIT
MECHANICAL DATA
C
C
PARAMETER
Forward Voltage
Reverse Current
Breakdown Voltage
Diode Capacitance
Rectification Efficiency
Reverse Recovery Time
REV. : 0
MAXIMUM THERMAL RESISTANCE ( TJ=25oC )
TEST CONDITIONS
( IF = 5 mA )
( IF = 50 mA )
( IF = 100 mA )
( VR = 20 V )
( VR = 20 V, TJ=150oC )
( VR = 75 V )
( IR = 100 uA, tp/T = 0.01, tp = 0.3 ms )
( VR = 0, f=1.0MHz, V
( V
= 2 V, f = 100MHZ )
HF
( IF = IR = 10mA, I
( IF = 10mA, VR = 6 V, IR = 0.1 X IR, RL = 100 )
( Type : LL4448 )
( Type : LL4148 )
( Type : LL4448 )
= 50mV )
HF
= 1mA )
R
SYMBOL
MIN. TYP.
V
F
I
R
V
(BR)
C
D
r
t
rr
0.62
-
-
-
-
-
100 - Volts
- -
45 - -
-
-
-
0.86
0.93
-
-
-
-
-
MAX.
0.72
1.0
1.0
25
50
5.0
-
4
8
4
Zowie Technology Corporation
UNIT
Volts
nAdc
uAdc
pF
%
nS
RATINGS AND CHARACTERISTIC CURVES LL4148, LL4448
FIG.1 - FORWARD CURRENT VS. FORWARD VOLTAGE
1000
LL4148
100
Scattering Limit
10
1
IF - FORWARD CURRENT ( mA )
0.1
0 0.4 0.8 1.2 1.6
VF - FORWARD VOLTAGE ( V ) VF - FORWARD VOLTAGE ( V )
TJ = 25oC
2.0
FIG.2 - FORWARD CURRENT VS. FORWARD VOLTAGE
1000
LL4448
100
Scattering Limit
10
1
TJ = 25oC
IF - FORWARD CURRENT ( mA )CD - DIODE CAPACITANCE ( pF )
0.1
0 0.4 0.8 1.2 1.6
2.0
FIG.3 - REVERSSE CURRENT VS. REVERSE VOLTAGE FIG.4 - DIODE CAPACITANCE VS. REVERSE VOLTAGE
1000
3.0
2.5
TJ = 25oC
100
2.0
1.5
10
- REVERSE CURRENT ( nA )
R
I
Scattering Limit
1.0
0.5
1
1 0
100
0
0.1 1 10
VR - REVERSE VOLTAGE ( V ) VR - REVERSE VOLTAGE ( V )
100
REV. : 0
Zowie Technology Corporation
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