ZOWIE EGF30F, EGF30D, EGF30B, EGF30A, EGF30M Datasheet

EGF30A THRU EGF30M

SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

PATENTED

PATENTED

PATENTED

0.150(3.80)

0.130(3.30)

0.102(2.60)

0.079(2.00)

*Dimensions in inches and (millimeters)

DO-214AA

0.187(4.75)

0.167(4.24)

0.050(1.27)

0.030(0.76)

0.236(6.00)

0.197(5.00)

0.083(2.12)

0.077(1.95)

0.016(0.40)

0.006(0.15)

TM

FEATURES

*GPRC (Glass Passivated Rectifier Chip) inside
*Glass passivated cavity-free junction
*Ideal for surface mount automotive applications
*Superfast recovery time for high efficiency
*Built-in strain relief
*Easy pick and place
*High temperature soldering guaranteed: 260oC/10 seconds,
 at terminals
*Plastic package has Underwriters Laboratory Flammability
 Classification 94V-0

MECHANICAL DATA

Case : JEDEC DO-214AA molded plastic over passivated chip
Terminals : Solder plated , solderable per MIL-STD-750,

  Method 2026

Polarity : Color band denotes cathode end
Mounting Position : Any
Weight : 0.004 ounes , 0.12 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature
unless otherwise specified.

Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage

Maximum average forward rectified current TA=75oC

Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)

Maximum instantaneous forward voltage at 3.0 A

Maximum DC reverse current
at rated DC blocking voltage

Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

NOTES :(1)Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
 (2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
 (3)Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.

TA=25oC
TA=125oC
TA=150oC

SYMBOLS

VRRM
VRMS

VDC

I (AV)

IFSM

VF

IR

trr

CJ

R JA
R JL

TJ,TSTG

A B D F G J M

50 100 200 300 400 600 1000
35 70 140 210 280 420 700

50 100 200 300 400 600 1000

115 105

1.0 1.25 1.7
5

50

120

50 75

-65 to +175 -55 to +150

EGF30

800
560

800

3.0

120

75
47

12

K

5

-

UNITS

Volts
Volts
Volts

Amps

Amps

Volts

uA

nS
pF

o

C / W

o

C

REV. : 0

Zowie Technology Corporation

RATINGS AND CHARACTERISTIC CURVES EGF30A THRU EGF30M

FIG.1 - FORWARD CURRENT DERATING CURVE

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

2.0

RESISTIVE OR
INDUCTIVE LOAD

1.5

EGF30A~EGF30G

1.0

EGF30J~EGF30M

CURRENT, AMPERES

0.5

AVERAGE FORWARD RECTIFIED

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE, oC

FIG.3 - TYPICAL INSTANTANEOUS

120

100

TJ=TJ max.

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

80

AMPERES

60

40

EGF30J~EGF30M

EGF30A~EGF30G

20

PEAK FORWARD SURGE CURRENT,

0

1 10 100

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS

10.00

1.00

PULSE WIDTH=300uS
1% DUTY CYCLE

100

10

AMPERES

0.10

1

CURRENT, MICROAMPERES

IINSTANTANEOUS FORWARD CURRENT,

0.01

EGF30J~EGF30M
EGF30G
EGF30A~EGF30F

0.40.2 0.6 0.8 1.0 1.2 1.4 1.81.6

INSTANTANEOUS REVERSE LEAKAGE

0.1
0 20

40 60 80 100 110

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

TJ=125oC
TJ=150oC

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

200
100

TJ = 25oC

100

C/W)

o

60
40

10

20
10

6
4

JUNCTION CAPACITANCE, pF

1

2
1

.1

.2 .4 1.0 2 4 10 20 40 100

REVERSE VOLTAGE, VOLTS

0.1

TRANSIENT THERMAL IMPEDANCE(

100101.00.100.01

t , PULSE DURATION, sec

REV. : 0

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