ZOWIE EGF10M, EGF10K, EGF10J, EGF10G, EGF10F Datasheet

EGF10A THRU EGF10M

SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

PATENTED

PATENTED

PATENTED

0.115(2.92)

0.090(2.28)

0.102(2.60)

0.079(2.00)

*Dimensions in inches and (millimeters)

DO-214AC

0.181(4.60)

0.157(4.00)

0.050(1.27)

0.030(0.76)

0.220(5.60)

0.190(4.83)

0.064(1.63)

0.050(1.27)

0.016(0.40)

0.006(0.15)

TM

FEATURES

*GPRC (Glass Passivated Rectifier Chip) inside
*Glass passivated cavity-free junction
*Ideal for surface mount automotive applications
*Superfast recovery time for high efficiency
*Built-in strain relief
*Easy pick and place
*High temperature soldering guaranteed: 260oC/10 seconds,
 at terminals
*Plastic package has Underwriters Laboratory Flammability
 Classification 94V-0

MECHANICAL DATA

Case : JEDEC DO-214AC molded plastic over passivated chip
Terminals : Solder plated , solderable per MIL-STD-750,

  Method 2026

Polarity : Color band denotes cathode end
Mounting Position : Any
Weight : 0.002 ounes , 0.064 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature
unless otherwise specified.

Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage

Maximum average forward rectified current at TA=75oC

Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0 A

Maximum DC reverse current
at rated DC blocking voltage

Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

NOTES :(1)Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
 (2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
 (3)Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.

TA=25oC
TA=125oC
TA=150oC

SYMBOLS

VRRM
VRMS

VDC

I (AV)

IFSM

VF

IR

trr

CJ

R JA
R JL

TJ,TSTG

A B D F G J M

50 100 200 300 400 600 1000
35 70 140 210 280 420 700

50 100 200 300 400 600 1000

30 25

1.0 1.25 1.7
5

30
50

50 75

-65 to +175 -55 to +150

EGF10

800
560

800

1.0

50

15
75

25

K

5

-

UNITS

Volts
Volts
Volts

Amps

Amps

Volts

uA

nS
pF

o

C / W

o

C

REV. : 0

Zowie Technology Corporation

RATINGS AND CHARACTERISTIC CURVES EGF10A THRU EGF10M

FIG.1 - FORWARD CURRENT DERATING CURVE

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

1.0

0.5

EGF10J~EGF10M

RESISTIVE OR
INDUCTIVE LOAD

EGF10A~EGF10G

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE, oC

FIG.3 - TYPICAL INSTANTANEOUS

30

25

TJ=TJ max.

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

20

15

EGF10A~EGF10G

10

EGF10J~EGF10M

AMPERES

5

PEAK FORWARD SURGE CURRENT,

0

1 10 100

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS

10.00

1.00

PULSE WIDTH=300uS
1% DUTY CYCLE

100

10

AMPERES

0.10

1

CURRENT, MICROAMPERES

IINSTANTANEOUS FORWARD CURRENT,

0.01

EGF10J~EGF10M
EGF10G
EGF10A~EGF10F

0.40.2 0.6 0.8 1.0 1.2 1.4 1.81.6

INSTANTANEOUS REVERSE LEAKAGE

0.1
0 20

40 60 80 100 110

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

TJ=125oC
TJ=150oC

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

200
100

TJ = 25oC

100

C/W)

o

60
40

10

20
10

6
4

JUNCTION CAPACITANCE, pF

1

2
1

.1

.2 .4 1.0 2 4 10 20 40 100

REVERSE VOLTAGE, VOLTS

0.1

TRANSIENT THERMAL IMPEDANCE(

100101.00.100.01

t , PULSE DURATION, sec

REV. : 0

Zowie Technology Corporation