Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BASE
1
COLLECTOR
3
2
EMITTER
BC848A,B,C
3
1
2
SOT-23
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current-Continuous IC 100 mAdc
Value
Unit
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient 556
Total Device Dissipation Alumina Substrate,
(2)
TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient 417
Symbol
PD
R
JA
PD
JA
Junction and Storage Temperature
Max.
225
1.8
300
2.4
-55 to +150
Unit
mW
mW / oC
o
C / W
mW
mW / oC
o
C / WR
o
CTJ,TSTG
DEVICE MARKING
BC848A=1J; BC848B=1K; BC848C=1L
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC=10mA )
Collector-Emitter Breakdowe Voltage
( IC=10 uA, VEB=0 )
Collector-Base Breakdowe Voltage
( IC=10 uA )
Emitter-Base Breakdowe Voltage
( IE=1.0 uA )
Collector Cutoff Current
( VCB=30 V )
( VCB=30 V, TA = 150oC )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Min.
30
30
30
5.0
-
-
Typ.
-
-
-
-
-
-
Max.
-
-
-
-
15
5.0
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
uAdc
Zowie Technology CorporationREV. : 0
Zowie Technology Corporation
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
( IC= 10 uA, VCE= 5.0 V )
( IC= 2.0 mA, VCE= 5.0 V )
Collector-Emitter Saturation Voltage
( IC= 10 mA, IB= 0.5 mA )
( IC= 100 mA, IB= 5.0 mA )
Base-Emitter Saturation Voltage
( IC= 10 mA, IB= 0.5 mA )
( IC= 100 mA, IB= 5.0 mA )
BC848A
BC848B
BC848C
BC848A
BC848B
BC848C
Symbol
HFE
VCE(sat)
VBE(sat)
Min.
-
-
110
200
420
-
-
-
-
Typ.
90
150
270
180
290
520
-
-
0.7
0.9
Max.
-
-
-
220
450
800
0.25
0.60
-
-
Unit
-
V
V
Base-Emitter Voltage
( IC= 2.0 mA, VCE= 5.0 V )
( IC= 10 mA, VCE= 5.0 V )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC= 10 mA, VCE= 5.0 V, f=100 MHZ )
Output Capacitance
( VCB= 10 V, f=1.0 MHZ )
Noise Figure
( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ)
VBE(on) mV
fT
Cobo
NF
580
-
100
-
-
660
-
-
-
-
700
770
-
4.5
10
MHZ
pF
dB
Zowie Technology CorporationREV. : 0
Zowie Technology Corporation
BC847A,B,C
2.0
1.5
1.0
0.8
0.6
0.4
0.3
, NORMALIZED DC CURRENT GAIN
FE
h
0.2
0.2 0.5 1.0 10 20
2.0 5.0
IC, COLLECTOR CURRENT ( mA )
Figure 1. Normalized DC Current Gain
2.0
I
1.6
1.2
0.8
I
C
C
= 10 mA
= 20 mA
I
C
= 50 mA
TA= 25oC
I
C
= 100 mA
50
VCE = 10 V
TA= 25oC
100
I
C
= 200 mA
200
o
V, VOLTAGE ( VOLTS )
C)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
1.2
1.6
2.0
2.4
TA= 25oC
VBE(SAT) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(SAT) @ IC/IB = 10
0.2 0.5 1.0 10 20
2.0
IC, COLLECTOR CURRENT ( mA )
Figure 2. "Saturation" and "On" Voltage
-55oC to +125oC
50
307.05.03.00.70.30.1
10070
0.4
, COLLECTOR EMITTER VOLTAGE ( V )
CE
V
0.02 1.0
0.1
IB, BASE CURRENT ( mA )
Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient
10
7.0
5.0
3.0
C
ib
C
ob
2.0
C, CAPACITANCE ( pF )
1.0
0.4 0.6 1.0 10 20
0.8 4.0 8.0
2.0 6.0
VR, REVERSE VOLTAGE ( VOLTS )
Figure 5. Capacitances
TA= 25oC
10020
2.8
, TEMPERATURE COEFFICIENT (mV /
VB
0.2 1.0
10 100
IC, COLLECTOR CURRENT ( mA )
)
Z
400
300
VCE = 10 V
TA= 25oC
200
100
80
60
40
30
20
40
, CURRENT-GAIN-BANDWIDTH PRODUCT(MH
T
t
0.7 1.0 10 202.0
IC, COLLECTOR CURRENT ( mA )
50
307.05.03.00.5
Figure 6. Current-Gain-Bandwidth Product
REV. : 0
Zowie Technology Corporation
Zowie Technology Corporation
BC847A,B,C
1.0
TA= 25oC
2.0
1.0
0.5
0.2
, DC CURRENT GAIN (NORMALIZED)
FE
h
0.1 1.0
2.0
1.6
1.2
0.8
0.2
10 100
IC, COLLECTOR CURRENT ( mA )
Figure 7. DC Current Gain
I
I
C
C
= 20 mA
= 10 mA
I
C
= 50 mA
VCE = 10 V
TA= 25oC
0.8
0.6
VBE(SAT) @ IC/IB = 10
VBE @ VCE = 5.0 V
0.4
0.2
V, VOLTAGE ( VOLTS )
0
0.2 1.0
VCE(SAT) @ IC/IB = 10
0.5 2.0 5.0
20 50 100
10 200
IC, COLLECTOR CURRENT ( mA )
Figure 8. "On" Voltage
-1.0
TA= 25oC
I
I
C
= 100 mA
C
= 200 mA
o
C)
-55oC to +125oC
-1.4
-1.8
VB for VBE
-2.2
0.4
, COLLECTOR EMITTER VOLTAGE ( V )
CE
V
0.02 1.0
0.1
0.05 0.2 0.5 2.0 5.0
IB, BASE CURRENT ( mA )
Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient
10020
-2.6
, TEMPERATURE COEFFICIENT (mV /
VB
-3.0
0.2 1.0
10 200
IC, COLLECTOR CURRENT ( mA )
REV. : 0
Zowie Technology Corporation
Loading...