Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BASE
1
COLLECTOR
3
2
EMITTER
BC848A,B,C
3
1
2
SOT-23
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current-Continuous IC 100 mAdc
Value
Unit
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient 556
Total Device Dissipation Alumina Substrate,
(2)
TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient 417
Symbol
PD
R
JA
PD
JA
Junction and Storage Temperature
Max.
225
1.8
300
2.4
-55 to +150
Unit
mW
mW / oC
o
C / W
mW
mW / oC
o
C / WR
o
CTJ,TSTG
DEVICE MARKING
BC848A=1J; BC848B=1K; BC848C=1L
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC=10mA )
Collector-Emitter Breakdowe Voltage
( IC=10 uA, VEB=0 )
Collector-Base Breakdowe Voltage
( IC=10 uA )
Emitter-Base Breakdowe Voltage
( IE=1.0 uA )
Collector Cutoff Current
( VCB=30 V )
( VCB=30 V, TA = 150oC )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Min.
30
30
30
5.0
-
-
Typ.
-
-
-
-
-
-
Max.
-
-
-
-
15
5.0
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
uAdc
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ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
( IC= 10 uA, VCE= 5.0 V )
( IC= 2.0 mA, VCE= 5.0 V )
Collector-Emitter Saturation Voltage
( IC= 10 mA, IB= 0.5 mA )
( IC= 100 mA, IB= 5.0 mA )
Base-Emitter Saturation Voltage
( IC= 10 mA, IB= 0.5 mA )
( IC= 100 mA, IB= 5.0 mA )
BC848A
BC848B
BC848C
BC848A
BC848B
BC848C
Symbol
HFE
VCE(sat)
VBE(sat)
Min.
-
-
110
200
420
-
-
-
-
Typ.
90
150
270
180
290
520
-
-
0.7
0.9
Max.
-
-
-
220
450
800
0.25
0.60
-
-
Unit
-
V
V
Base-Emitter Voltage
( IC= 2.0 mA, VCE= 5.0 V )
( IC= 10 mA, VCE= 5.0 V )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC= 10 mA, VCE= 5.0 V, f=100 MHZ )
Output Capacitance
( VCB= 10 V, f=1.0 MHZ )
Noise Figure
( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ)
VBE(on) mV
fT
Cobo
NF
580
-
100
-
-
660
-
-
-
-
700
770
-
4.5
10
MHZ
pF
dB
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