ZOWIE BAV74 Datasheet

Zowie Technology Corporation
Monolithic Dual Switching Diode
BAV74
1
SOT-23
3
CATHODE
3
2
ANODE
ANODE
MAXIMUM RATINGS
Rating
Value
Unit
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
TA=25oC
Derate above 25oC Thermal Resistance, Junction to Ambient 556 Total Device Dissipation Alumina Substrate,
(2)
TA=25oC
Derate above 25oC Thermal Resistance, Junction to Ambient 417
PD
R
JA
PD
JA
Junction and Storage Temperature
Max.
225
1.8
300
2.4
-55 to +150
Unit mW
mW / oC
o
C / W
mW
mW / oC
o
C / WR
1
2
o
CTJ,TSTG
DEVICE MARKING
BAV74=JA
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min.
OFF CHARACTERISTICS
Reverse Breakdown Voltage ( IBR=5.0 uAdc )
Forward Voltage ( IF=100 mAdc )
( VR=50 Vdc ) ( VR=50 Vdc, TJ=125oC )
Diode Capacitance ( VR=0, f=1.0MHZ )
Reverse Recovery Time ( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 )
V(BR) 50 - Vdc
VF
- 1000
-
IR
-
CJ - 2.0 pF
trr - 4.0 nS
Max.
0.1
100
Unit
mVdc
uAdcReverse Voltage Leakage Current
(1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology CorporationREV. : 0
Zowie Technology Corporation
FIGURE 1. FORWARD VOLTAGE FIGURE 2. LEAKAGE CURRENT
BAV74
100
10
1.0
IF, FORWARD CURRENT ( mA )
0.1
0.2 0.4
TA=85oC
TA= -40oC
TA=25oC
0.6 0.8
VF, FORWARD VOLTAGE ( VOLTS )
1.0
1.0
1.2
FIGURE 3. CAPACITANCE
, REVERSE CURRENT ( uA )
R
I
0.001
10
1.0
0.1
0.01
TA=150oC
TA=125oC
TA=85oC
TA=55oC
TA=25oC
0
10
20
30 40
50
VR, REVERSE VOLTAGE ( VOLTS )
0.9
0.8
0.7
DIODE CAPACITANCE ( pF )
0.6 0 2 4 6 8
VR, REVERSE VOLTAGE ( VOLTS )
REV. : 0
Zowie Technology Corporation
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