Zetex Semiconductor MPSH10P Datasheet
NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 4 FEB 94
FEATURES
* High f
* Max. capacitance 0.7pF
* Low noise <5dB at 500MHz
APPLICATIONS
* Keyless entry systems
* Wideband instrumentation amplifiers
* Telemetry
* Wireless lans
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=650MHz min
T
=25°C P
amb
CBO
CEO
EBO
C
tot
j:Tstg
MPSH10PMPSH10P
C
E
B
E-Line
TO92 Compatible
30 V
25 V
3V
25 mA
500 mW
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Collector Base Capacitance C
Collector Base Time
Constant
Common-Base Feedback
capacitance
Noise Figure N
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
T
cb
r
bCc
C
rb
f
*Measured under pulsed conditions. Pulse width=300
30 V
I
=100µA, I
C
25 V IC=1mA, IB=0*
3V
=10µA, I
I
E
100 nA VCB=25V, IE=0
100 nA VEB=2V,IC=0
0.5 V IC=4mA, IB=0.4mA
0.95 V IC=4mA, VCE=10V
60 IC=4mA, VCE=10V*
650 MHz IC=4mA, VCE=10V f=100MHz
0.7 pF VCB=10V, IE=0, f=1MHz
9psV
=10V, IC=4mA,
CB
f=31.8MHz
0.65 pF VCB=10V, IE=0, f=1MHz
5dBI
µs. Duty cycle ≤2%
=2mA, VCE=5V,
C
Ω,
R
=50
f=500MHz
S
3-883-89
=0
E
=0
C
TYPICAL CHA R ACTERISTICS
200
150
n
Gai
100
-
E
F
h
50
0
1500
1000
- (MHz)
T
f
500
0
175°C
100°C
25°C
-55°C
0.1 1 10
(mA)
IC -
hFEv IC
IC - (mA)
VCE=-10V
VCE=10V
f=100MHz
1.0
VCE=-10V
0.8
)
0.6
olts
V
(
-
E
0.4
B
V
0.2
100
1000.1 1 10
0
1.2
1.0
0.8
)
F
0.6
p
(
-
CB
0.4
C
0.2
0
0.1 1 10
-55°C
25°C
100°C
175°C
V
(mA)
IC -
BE(on)
1000.1 1 10
v IC
30
VCB - (Volts)
CCBv VCB fTv IC
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