Zetex Semiconductor MPSA92 Datasheet
PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE2 MARCH 94
FEATURES
* High voltage
APPLICATIONS
* Telephone dialler circuits
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
C
tot
j:Tstg
MPSA92
C
B
E
E-Line
TO92 Compatible
-300 V
-300 V
-5 V
-500 mA
680 mW
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
obo
*Measured under pulsed conditions. Pulse width=300
-300 V
=-100µA, I
I
C
-300 V IC=-1mA, IB=0*
-5 V
-0.25
-0.1
µA
µA
I
=-10µA, IC=0
E
V
=-200V, IE=0
CB
V
=-3V, IE=0
EB
-0.5 V IC=-20mA, IB=-2mA*
-0.9 V IC=-20mA, IB=-2mA*
25
40
25
IC=-1mA, VCE=10V*
=-10mA, VCE=10V*
I
C
=-30mA,VCE=-10V*
I
C
50 MHz IC=-10mA, VCE=-20V
f=20MHz
6pFVCB=-20V, f=1MHz
µs. Duty cycle ≤2%
3-84
=0
E
o
ti
a
R
r
60
fe
s
n
ra
T
t
en
r
50
rward Cur
o
40
atic F
St
0.1
E
F
h
MPSA92
TYPICAL CHARACTERISTI C S
170
Hz)
M
150
(
y
c
130
n
ue
VCE=10V
VCE=10V
1.0
C
-Collector Current (mA) IC-Collector Current (mA)
I
hFEvs I
10
C
100
eq
n Fr
o
i
t
nsi
a
r
T
T
f
110
90
70
50
30
0.1
VCE=20V
1.0
fTvs I
10
C
100
olts)
3.0
oltage(V
2.0
1.0
0
(sat) Collector-Emitter Saturation V
CE
V
IC / IB=10
1.0
IC-Collector Current (mA)
CE(sat)
V
vs I
10ms
=25°C
amb
1ms
100
1000
Single Pulse Test at T
1A
s
Amp
0.1
t
en
r
Cur
0.01
lector
l
-Co
C
I
0.001
10
100
1
100ms
D.C.
10
VCE-Collector-Emitter Voltage (Volts)
C
Safe operating area
3-85
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