Zetex Semiconductor MPSA06 Datasheet
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 FEB 94
FEATURES
* 80 Volt V
* Gain of 50 at IC=100mA
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
CEO
=25°C P
amb
CBO
CEO
EBO
C
tot
j:Tstg
MPSA06
C
B
E
E-Line
TO92 Compatible
80 V
80 V
4V
500 mA
750 mW
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
V
CE(sat)
V
BE(on)
h
FE
f
T
*Measured under pulsed conditions. Pulse width=300
80 V
I
=100µA, I
C
80 V IC=1mA, IB=0*
4V
0.1
0.1
µA
µA
=100µA, I
I
E
V
=80V, IE=0
CB
V
=60V
CE
0.25 V IC=100mA, IB=10mA*
1.2 V IC=100mA, VCE=1V*
50
50
IC=10mA, VCE=1V*
I
=100mA, VCE=1V*
C
100 MHz IC=10mA, VCE=2V
f=100MHz
µs. Duty cycle ≤2%
3-76
=0
E
=0
C
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